Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.
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- Zhao, L. (Author)
- Chen, H.-Y. (Author)
- Wu, S.-C (Author)
- Jiang, Z. (Author)
- Yu, Shimeng (Author)
- Hou, T.-H. (Author)
- Wong, H.-S. Philip (Author)
- Nishi, Y. (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
- Digital object identifier: 10.1039/c4nr00500g
- Identifier TypeInternational standard serial numberIdentifier Value2040-3364
- This is the article as published at http://pubs.rsc.org.ezproxy1.lib.asu.edu/en/Content/ArticleLanding/2014/NR/c4nr00500g, opens in a new window
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Zhao et al. Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations. Nanoscale 2014, 6, 5698-5702 DOI: 10.1039/c4nr00500g