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The ability to spatially resolve the degree to which extended defects impact carrier diffusion lengths and lifetimes is important for determining upper limits for defect densities in semiconductor devices. We

The ability to spatially resolve the degree to which extended defects impact carrier diffusion lengths and lifetimes is important for determining upper limits for defect densities in semiconductor devices. We show that a new spatially and temporally resolved photoluminescence (PL) imaging technique can be used to accurately extract carrier lifetime values in the immediate vicinity of dark-line defects in CdTe/MgCdTe double heterostructures.

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  • 2014-09-24
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    Fluegel, B., Alberi, K., DiNezza, M. J., Liu, S., Zhang, Y. -H., & Mascarenhas, A. (2014). Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as Seen via Microphotoluminescence. PHYSICAL REVIEW APPLIED, 2(3), 0-0. http://dx.doi.org/10.1103/PhysRevApplied.2.034010

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