Description
The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH3)3 and P(GeH3)3 hydride precursors.
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Contributors
- Xu, Chi (Author)
- Senaratne, Charutha Lasitha (Author)
- Kouvetakis, John (Author)
- Menéndez, Jose (Author)
- College of Liberal Arts and Sciences (Contributor)
Date Created
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2014-12-08
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Identifier
- Digital object identifier: 10.1063/1.4903492
- Identifier TypeInternational standard serial numberIdentifier Value0003-6951
- Identifier TypeInternational standard serial numberIdentifier Value1077-3118
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- Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 105, 23 (2014) and may be found at http://dx.doi.org/10.1063/1.4903492, opens in a new window
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Xu, Chi, Senaratne, C. L., Kouvetakis, J., & Menendez, J. (2014). Frustrated incomplete donor ionization in ultra-low resistivity germanium films. APPLIED PHYSICS LETTERS, 105, 232103. http://dx.doi.org/10.1063/1.4903492