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The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by

The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH[subscript 3])[subscript 3] and P(GeH[subscript 3])[subscript 3] hydride precursors.

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Date Created
  • 2014-12-08
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4903492
    • Identifier Type
      International standard serial number
      Identifier Value
      0003-6951
    • Identifier Type
      International standard serial number
      Identifier Value
      1077-3118
    Note
    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 105, 23 (2014) and may be found at http://dx.doi.org/10.1063/1.4903492, opens in a new window

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    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Xu, Chi, Senaratne, C. L., Kouvetakis, J., & Menendez, J. (2014). Frustrated incomplete donor ionization in ultra-low resistivity germanium films. APPLIED PHYSICS LETTERS, 105, 232103. http://dx.doi.org/10.1063/1.4903492

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