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The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO[subscript 3] grown by molecular beam epitaxy.

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Date Created
  • 2015-01-01
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    Identifier
    • Digital object identifier: 10.1038/ncomms7067
    • Identifier Type
      International standard serial number
      Identifier Value
      0032-0633
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    Ponath, Patrick, Fredrickson, Kurt, Posadas, Agham B., Ren, Yuan, Wu, Xiaoyu, Vasudevan, Rama K., Okatan, M. Baris, Jesse, S., Aoki, Toshihiro, McCartney, Martha R., Smith, David J., Kalinin, Sergei V., Lai, Keji, & Demkov, Alexander A. (2015). Carrier density modulation in a germanium heterostructure by ferroelectric switching. Nature Communications, 6: 6067. http://dx.doi.org/10.1038/ncomms7067

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