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A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd[subscript 0.9946] Zn[subscript 0.0054]Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A

A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd[subscript 0.9946] Zn[subscript 0.0054]Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 10[superscript 2] ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy.

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Date Created
  • 2015-01-01
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  • Text
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    Identifier
    • Digital object identifier: 10.1116/1.4905289
    • Identifier Type
      International standard serial number
      Identifier Value
      2166-2754
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    • Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 33, (2015) and may be found at http://dx.doi.org/10.1116/1.4905289, opens in a new window

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    Liu, Shi, Zhao, Xin-Hao, Campbell, Calli, DiNezza, Michael J., Zhao, Yuan, & Zhang, Yong-Hang (2015). Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 33, 011207. http://dx.doi.org/10.1116/1.4905289

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