Description

Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge[subscript 3]H[subscript 8] and SnD[subscript 4] hydrides, to fabricate Ge[subscript 1-y]Sn[subscript y] photodiodes with very high Sn concentrations in

Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge[subscript 3]H[subscript 8] and SnD[subscript 4] hydrides, to fabricate Ge[subscript 1-y]Sn[subscript y] photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties.

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Date Created
  • 2016-07-13
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4956439
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J., & Menéndez, J. (2016). Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes. Journal of Applied Physics, 120(2), 025701. doi:10.1063/1.4956439

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