Description
Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%–16% range.
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Contributors
- Senaratne, Charutha Lasitha (Author)
- Wallace, Patrick (Author)
- Gallagher, John (Author)
- Sims, Patrick (Author)
- Kouvetakis, John (Author)
- Menéndez, Jose (Author)
- College of Liberal Arts and Sciences (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016-07-13
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Identifier
- Digital object identifier: 10.1063/1.4956439
- Identifier TypeInternational standard serial numberIdentifier Value0021-8979
- Identifier TypeInternational standard serial numberIdentifier Value1089-7550
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- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://aip.scitation.org/doi/10.1063/1.4956439, opens in a new window.
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Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J., & Menéndez, J. (2016). Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes. Journal of Applied Physics, 120(2), 025701. doi:10.1063/1.4956439