This is a two-part thesis.Part-I:
This work investigated the long-term reliability of a statistically significant number of two different commercial module-level power electronics (MLPE) devices using two input power profiles at high temperatures to estimate their reliability and service life in field-use conditions. Microinverters underwent a period of 15,000 accelerated stress hours, whereas the power optimizers underwent a period of 6,400 accelerated stress hours. None of the MLPE devices failed during the accelerated test; however, the optimizers degraded by about 1% in output efficiency. Based on their accelerated stress temperatures, the estimated field equivalent service life approximated using the Arrhenius model ranges between 24-48 years for microinverters and 39-73 years for optimizers, with a reliability of 74% and a lower one-sided confidence level of 95%. Furthermore, using the Weibull distribution model, the reliability and service lifetimes of MLPE devices are statistically analyzed. MLPE lifetimes estimated using Weibull slope and shape parameters with a 95% lower one-sided confidence level indicate a similar, or possibly exceeding, the 25-year lifetime of the associated photovoltaic (PV) modules. Part–II:This study investigated the impact of the hotspot stress test on glass-backsheet and glass-glass modules. Before the hotspot testing, both modules were pre-stressed using 600 thermal cycles (TC600) to represent decades of field-exposed modules experiencing hotspot effects in field-use conditions. The glass-glass module reached a hotspot temperature of nearly 200°C, whereas the glass-backsheet module's maximum hotspot temperature was almost 150°C. After the hotspot experiment, electroluminescence imaging showed that most of the cells in the glass-glass module appeared to have experienced significant damage. In contrast, the stressed cells in the glass-backsheet module appeared to have experienced insignificant damage. After the sequential stress testing (hotspot testing after TC600), the glass-glass module degraded by nearly 8.3% in maximum power, whereas the glass-backsheet module experienced 1.3% degradation. This study also incorporated hotspot endurance in fresh (without being subjected to prior TC600) glass-glass and glass-backsheet modules. The test outcome demonstrated that both module types exhibited marginal maximum power loss.

Handheld devices and personal laptops are becoming compact and complex every year with a demand to have higher power density, efficiency, and fast transient response. DC-DC boost converters are used in display and haptic drivers where the output voltage needs to be boosted higher than input voltage. The load transient response and unity gain bandwidth (UGB) of DC-DC boost converters are restricted by the presence of a right half plane zero (RHPZ). In this paper, a control scheme termed peak current fast feedback control (PFFC) is proposed to improve the load transient response without the need for additional power switches or passive components. The fast feedback (FFB) path is designed to achieve low output voltage change and fast settling time with the same UGB when compared to the conventional peak current mode control (CPCM). In the proposed PFFC method, the closed loop output impedance (ZOCL) is improved by reducing the DC value and by increasing the bandwidth of ZOCL as compared to conventional peak current mode control (CPCM), thus improving the steady state and transient performance. The fast feedback (FFB) path is implemented within the error amplifier (EA) with an increase of only 2% in the active area as compared to CPCM. The boost converter is designed for VOUT=5V, VIN=2.5V-4.4V and ILOAD=10mA-1A operating at a frequency of 2MHz. Measurement results show that with PFFC enabled, the settling time reduces by ~2.6X and the undershoot reduces by 62% to 12μs and 41mV respectively when compared to CPCM for 10mA to 1A load step at 2A/μs. The PFFC approach improves the settling time by 12X to 26us and reduces the overshoot by 56% to 56mV when compared to CPCM for 1A to 10mA load step at 2A/μs. The converter achieves a peak efficiency of 95.2% at 0.5W output power with VIN=4.4V and load regulation of 9mV/A at VIN=2.5V. The line transient response at VOUT=5V, ILOAD=700mA for VIN=3V ↔ 4V which is repeated at 280μs time period is 235mV and 245mV for CPCM and PFFC respectively.

A photovoltaic (PV) module is a series and parallel connection of multiple PV cells; defects in any cell can cause module power to drop. Similarly, a photovoltaic system is a series and parallel connection of multiple modules, and any low-performing module in the PV system can decrease the system output power. Defects in a solar cell include, but not limited to, the presence of cracks, potential induced degradation (PID), delamination, corrosion, and solder bond degradation. State-of-the-art characterization techniques to identify the defective cells in a module and defective module in a string are i) Current-voltage (IV) curve tracing, ii) Electroluminescence (EL) imaging, and iii) Infrared (IR) imaging. Shortcomings of these techniques include i) unsafe connection and disconnection need to be made with high voltage electrical cables, and ii) labor and time intensive disconnection of the photovoltaic strings from the system.This work presents a non-contact characterization technique to address the above two shortcomings. This technique uses a non-contact electrostatic voltmeter (ESV) along with a probe sensor to measure the surface potential of individual solar cells in a commercial module and the modules in a string in both off-grid and grid-connected systems. Unlike the EL approach, the ESV setup directly measures the surface potential by sensing the electric field lines that are present on the surface of the solar cell.
The off-grid testing of ESV on individual cells and multicells in crystalline silicon (c-Si) modules and on individual cells in cadmium telluride (CdTe) modules and individual modules in a CdTe string showed less than 2% difference in open circuit voltage compared to the voltmeter values. In addition, surface potential mapping of the defective cracked cells in a multicell module using ESV identified the dark, grey, and bright areas of EL images precisely at the exact locations shown by the EL characterization.
The on-grid testing of ESV measured the individual module voltages at maximum power point (Vmpp) and quantitatively identified the exact PID-affected module in the entire system. In addition, the poor-performing non-PID modules of a grid-connected PV system were also identified using the ESV technique.

Modern-day automobiles are becoming more connected and reliant on wireless connectivity. Thus, automotive electronics can be both a cause of and highly sensitive to electromagnetic interference (EMI), and the consequences of failure can be fatal. Technology advancements in engineering have brought several features into the automotive field but at the expense of electromagnetic compatibility issues. Automotive EMC problems are the result of the emissions from electronic assemblies inside a vehicle and the susceptibility of the electronics when exposed to external EMI sources. In both cases, automotive EMC problems can cause unintended changes in the automotive system operation. Robustness to electromagnetic interference (EMI) is one of the primary design aspects of state-of-the-art automotive ICs like System Basis Chips (SBCs) which provide a wide range of analog, power regulation and digital functions on the same die. One of the primary sources of conducted EMI on the Local Interconnect Network (LIN) driver output is an integrated switching DC-DC regulator noise coupling through the parasitic substrate capacitance of the SBC. In this dissertation an adaptive active EMI cancellation technique to cancel the switching noise of the DC-DC regulator on the LIN driver output to ensure electromagnetic compatibility (EMC) is presented. The proposed active EMI cancellation circuit synthesizes a phase synchronized cancellation pulse which is then injected onto the LIN driver output using an on-chip tunable capacitor array to cancel the switching noise injected via the substrate. The proposed EMI reduction technique can track and cancel substrate noise independent of process technology and device parasitics, input voltage, duty cycle, and loading conditions of the DC-DC switching regulator. The EMI cancellation system is designed and fabricated on a 180nm Bipolar-CMOS-DMOS (BCD) process with an integrated power stage of a DC-DC buck regulator at a switching frequency of 2MHz along with an automotive LIN driver. The EMI cancellation circuit occupies an area of 0.7 mm2, which is less than 3% of the overall area in a standard SBC and consumes 12.5 mW of power and achieves 25 dB reduction of conducted EMI in the LIN driver output’s power spectrum at the switching frequency and its harmonics.

The world has seen a revolution in cellular communication with the advent of 5G, which enables gigabits per second data speed with low latency, massive capacity, and increased availability. Complex modulated signals are used in these moderncommunication systems to achieve high spectral efficiency, and these signals exhibit high peak to average power ratios (PAPR). Design of cellular infrastructure hardware to support these complex signals therefore becomes challenging, as the transmitter’s radio frequency power amplifier (RF PA) needs to remain highly efficient at both peak and backed off power conditions. Additionally, these PAs should exhibit high linearity and support continually increasing bandwidths. Many advanced PA configurations exhibit high efficiency for processing legacy communications signals. Some of the most popular architectures are Envelope Elimination and Restoration (EER), Envelope Tracking (ET), Linear Amplification using Non-linear Component (LINC), Doherty Power Amplifiers (DPA), and Polar Transmitters. Among these techniques,
the DPA is the most widely used architecture for base-station applications because of its simple configuration and ability to be linearized using simple digital pre-distortion (DPD) algorithms. To support the cellular infrastructure needs of 5G and beyond, RF PAs, specifically DPA architectures, must be further enhanced to support broader bandwidths as well as smaller form-factors with higher levels of integration. The following four novel works are presented in this dissertation to support RF PA requirements for future cellular infrastructure:
1. A mathematical analysis to analyze the effects of non-linear parasitic capacitance (Cds) on the operation of continuous class-F (CCF) mode power amplifiers and identify their optimum operating range for high power and efficiency.
2. A methodology to incorporate a class-J harmonic trapping network inside the PA package by considering the effect of non-linear Cds, thus reducing the DPA footprint while achieving high RF performance.
3. A novel method of synthesizing the DPA’s output combining network (OCN) to realize an integrated two-stage integrated LDMOS asymmetric DPA.
4. A novel extended back-off efficiency range DPA architecture that engineers the mutual interaction between combining load and peaking off-state impedance. The theory and architecture are verified through a GaN-based DPA design.

DC-DC converters are widely employed to interface one voltage level with another through step-up or step-down operation. In recent years, step-up DC-DC converters have been a key component in harnessing energy through renewable sources by providing an interface to integrate low voltage systems to DC-AC converters or microgrids. They find increasing applications in battery and fuel cell electric vehicles which can benefit from high and variable DC link voltage. It is important to optimize these converters for higher efficiency while achieving high gain and high power density. Non-isolated DC-DC converters are an attractive option due to the reduced complexity of magnetic design, smaller size, and lower cost. However, in these topologies, achieving a very high gain along with high efficiency has been a challenge. This work encompasses different non-isolated high gain DC-DC converters for electric vehicle and renewable energy applications. The converter topologies proposed in this work can easily achieve a conversion ratio above 20 with lower voltage and current stress across devices. For applications requiring wide input or output voltage range, different control schemes, as well as modified converter configurations, are proposed. Moreover, the converter performance is optimized by employing wide band-gap devices-based hardware prototypes. It enables higher switching frequency operation with lower switching losses. In recent times, multiple soft-switching techniques have been introduced which enable higher switching frequency operation by minimizing the switching loss. This work also discusses different soft-switching mechanisms for the high conversion ratio converter and the proposed mechanism improves the converter efficiency significantly while reducing the inductor size. Further, a novel electric vehicle traction architecture with low voltage battery and multi-input high gain DC-DC converter is introduced in this work. The proposed architecture with multiple 48 V battery packs and integrated, multi-input, high conversion ratio DC-DC converters, can reduce the maximum voltage in the vehicle during emergencies to 48 V, mitigate cell balancing issues in battery, and provide a wide variable DC link voltage. The implementation of high conversion ratio converter in multiple configurations for the proposed architecture has been discussed in detail and the proposed converter operation is validated experimentally through a scaled hardware prototype.

Bipolar commercial-off-the-shelf (COTS) circuits are increasingly used in spacemissions due to the low cost per part. In space environments these devices are exposed to
ionizing radiation that degrades their performance. Testing to evaluate the performance of
these devices is a costly and lengthy process. As such methods that can help predict a
COTS part’s performance help alleviate these downsides. A modeling software for
predicting total ionizing dose (TID), enhanced low dose rate sensitivity (ELDRS), and
hydrogen gas on bipolar parts is introduced and expanded upon. The model is then
developed in several key ways that expand it’s features and usability in this field. A
physics based methodology of simulating interface traps (NIT) to expand the previously
experimental only database is detailed. This new methodology is also compared to
experimental data and used to establish a link between hydrogen concentration in the
oxide and packaged hydrogen gas. Links are established between Technology Computer
Aided Design (TCAD), circuit simulation, and experimental data. These links are then
used to establish a better foundation for the model. New methodologies are added to the
modeling software so that it is possible to simulate transient based characteristics like
slew rate.

The development of portable electronic systems has been a fundamental factor to the emergence of new applications including ubiquitous smart devices, self-driving vehicles. Power-Management Integrated Circuits (PMICs) which are a key component of such systems must maintain high efficiency and reliability for the final system to be appealing from a size and cost perspective. As technology advances, such portable systems require high output currents at low voltages from their PMICs leading to thermal reliability concerns. The reliability and power integrity of PMICs in such systems also degrades when operated in harsh environments. This dissertation presents solutions to solve two such reliability problems.The first part of this work presents a scalable, daisy-chain solution to parallelize multiple low-dropout linear (LDO) regulators to increase the total output current at low voltages. This printed circuit board (PCB) friendly approach achieves output current sharing without the need for any off-chip active or passive components or matched PCB traces thus reducing the overall system cost. Fully integrated current sensing based on dynamic element matching eliminates the need for any off-chip current sensing components. A current sharing accuracy of 2.613% and 2.789% for output voltages of 3V and 1V respectively and an output current of 2A per LDO are measured for the parallel LDO system implemented in a 0.18μm process. Thermal images demonstrate that the parallel LDO system achieves thermal equilibrium and stable reliable operation.
The remainder of the thesis deals with time-domain switching regulators for high-reliability applications. A time-domain based buck and boost controller with time as the processing variable is developed for use in harsh environments. The controller features adaptive on-time / off-time generation for quasi-constant switching frequency and a time-domain comparator to implement current-mode hysteretic control. A triple redundant bandgap reference is also developed to mitigate the effects of radiation. Measurement results are showcased for a buck and boost converter with a common controller IC implemented in a 0.18μm process and an external power stage. The converter achieves a peak efficiency of 92.22% as a buck for an output current of 5A and an output voltage of 5V. Similarly, the converter achieves an efficiency of 95.97% as a boost for an output current of 1.25A and an output voltage of 30.4V.

This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases maximum common-mode transient immunity and the isolation capability of galvanic isolators in a low-cost standard CMOS solution beyond the limits provided from the vertical coupling. The design provides the highest reported CMTI (common-mode transient immunity) of more than 600 kV/µs, 5 kVpk isolation, and a chip area of 0.95 mm2. In the second work, a bi-directional ultra-wideband transformer-coupled galvanic isolator is reported for the first time. The proposed design merges the functionality of two isolated channels into one magnetically coupled communication, enabling up to 50% form-factor and assembly cost reduction while achieving a simultaneously robust and state-of-art performance. This work achieves simultaneous robust, wideband, and energy-efficient performance of 300 Mb/s data rate, isolation of 7.8 kVrms, and power consumption and propagation delay of 200 pJ/b and 5 ns, respectively, in only 0.8 mm2 area. The third works studies class-E pulse-width modulated (PWM) Power amplifiers (PAs). For the first time, it presents a design technique to significantly extend the Power back-off (PBO) dynamic range of PWM PAs over the prior art. A proof-of-concept watt-level class-E PA is designed using a GaN HEMT and exhibits more than 6dB dynamic range for a 50 to 30 percent duty cycle variation. Moreover, in this work, the effects of non-idealities on performance and design of class-E power amplifiers for variable supply on and pulse-width operations are characterized and studied, including the effect of non-linear parasitic capacitances and its exploitation for enhancement of average efficiency and self-heating effects in class-E SMPAs using a new over dry-ice measurement technique was presented for this first time. The non-ideality study allows for capturing a full view of the design requirement and considerations of class-E power amplifiers and provides a window to the phenomena that lead to a mismatch between the ideal and actual performance of class-E power amplifiers and their root causes.

Power management circuits have been more and more widely used in various applications, while providing fully integrated voltage regulation remains a challenging topic. Switched-capacitor (SC) voltage converters have received attentions in integrated power conversion for fixed-ratio voltage conversions with good efficiency and feasibility of integration. During my PhD study, an on-chip current sensing technique is proposed to dynamically modulate both switching frequency and switch widths of SC voltage converters, enhancing fast transient response and higher efficiency across a wide range of load currents. In conjunction with SC converters, a low-dropout regulator (LDO) is implemented which is driven by a push-pull operational transconductance amplifier (OTA), whose current is mirrored and sensed with minimal power and efficiency overhead. The sensed load current directly controls the frequency and width of SC converters through a voltage-controlled oscillator (VCO) and a time-to-digital converter, respectively.
Theoretical analysis and optimization for SC DC-DC converters have been presented in prior works, however optimization of different capacitors, namely flying and input/output decoupling capacitors, in SC voltage regulators (SCVRs) under an area constraint has not been addressed. A methodology to optimize flying and decoupling capacitance for area-constrained on-chip SCVRs to achieve the highest system-level power efficiency. Considering both conversion efficiency and droop voltage against fast load transients, the proposed model determines the optimal ratio between flying and decoupling.
Based on the previous design, a fully integrated switched-capacitor voltage regulator with voltage comparison and on-chip lossless current sensing control is proposed. Based on the voltage comparison result and sensed current as the load current changes, the frequency of the SC converters are modulated for optimal efficiency. The voltage regulator targets 2.1V input voltage and 0.9V output voltage, which offers higher-voltage power transfer across chip package. A 17-phase interleaved structure is used to reduce output voltage ripple.
In 65nm CMOS, the regulator is implemented with MIM-capacitor, targeting 2.1V input voltage and 0.9V output voltage. According to the measurement results, the proposed SC voltage regulator achieves 69.6% peak efficiency at 60mA load current, which corresponds to a 4.2mW/mm2 power-area density and 12.5mW
F power-capacitance density. The efficiency across 20mA to 92mA regulator load current range is above 62%. The steady-state output voltage ripple across 22x load current range of 3.5mA-76mA is between 50mV to 60mV.