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Title
- Gain Saturation and Carrier Distribution Effects in Molecular Beam Epitaxy Grown GaAsSb/GaAs Quantum Well Lasers
Contributors
- Yu, S.-Q. (Author)
- Jin, X. (Author)
- Johnson, Shane R. (Author)
- Zhang, Yong-Hang (Author)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2006
Resource Type
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Identifier
- Digital object identifier: 10.1116/1.2192534
Note
- Copyright 2006 American Vacuum Society. Link to the original site http://scitation.aip.org/content/avs/journal/jvstb/24/3/10.1116/1.2192534, opens in a new window
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Cite this item
This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.
S.-Q. Yu, X. Jin, S. R. Johnson, and Y.-H. Zhang, Journal of Vacuum Science & Technology B 24, 1617 (2006)