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Title
- Strained InGaAs/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm – 1550 nm Range
Contributors
- Braun, W. (Author)
- Dowd, P. (Author)
- Guo, C.-Z. (Author)
- Chen, S.-L. (Author)
- Ryu, C. M. (Author)
- Koelle, U. (Author)
- Johnson, Shane R. (Author)
- Zhang, Yong-Hang (Author)
- Tomm, J. W. (Author)
- Elsässer, T. (Author)
- Smith, D. J. (Author)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2000
Resource Type
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Identifier
- Digital object identifier: 10.1063/1.1287233
Note
- Copyright 2000 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/jap/88/5/10.1063/1.1287233, opens in a new window
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Cite this item
This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.
W. Braun, P. Dowd, C.-Z. Guo, S.-L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsässer, and D. J. Smith, Journal of Applied Physics 88, 3004 (2000)