The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.
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- Improved Optical Properties of InAs Quantum Dots for Intermediate Band Solar Cells by Suppression of Misfit Strain Relaxation
- Xie, Hongen (Author)
- Prioli Menezes, Rodrigo (Author)
- Fischer, Alec M. (Author)
- Ponce, Fernando (Author)
- Kawabata, R. M. S. (Author)
- Pinto, L. D. (Author)
- Jakomin, R. (Author)
- Pires, M. P. (Author)
- Souza, P. L. (Author)
- College of Liberal Arts and Sciences (Contributor)
- Digital object identifier: 10.1063/1.4958871
- Identifier TypeInternational standard serial numberIdentifier Value0021-8979
- Identifier TypeInternational standard serial numberIdentifier Value1089-7550
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://aip.scitation.org/doi/10.1063/1.4958871, opens in a new window.
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Xie, H., Prioli, R., Fischer, A. M., Ponce, F. A., Kawabata, R. M., Pinto, L. D., . . . Souza, P. L. (2016). Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. Journal of Applied Physics, 120(3), 034301. doi:10.1063/1.4958871