Description

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range.

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Date Created
  • 2016-07-15
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4958871
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    Xie, H., Prioli, R., Fischer, A. M., Ponce, F. A., Kawabata, R. M., Pinto, L. D., . . . Souza, P. L. (2016). Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. Journal of Applied Physics, 120(3), 034301. doi:10.1063/1.4958871

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