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We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage

We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures.

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    Date Created
    • 2016-09-09
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    Identifier
    • Digital object identifier: 10.1038/srep33118
    • Identifier Type
      International standard serial number
      Identifier Value
      2045-2322
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    Cunha, C. R., Mineharu, M., Matsunaga, M., Matsumoto, N., Chuang, C., Ochiai, Y., . . . Aoki, N. (2016). Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior. Scientific Reports, 6(1). doi:10.1038/srep33118

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