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Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm[superscript 2] and 95 kW/cm[superscript 2] at room temperature, respectively.

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Date Created
  • 2014-10-06
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4897527
    • Identifier Type
      International standard serial number
      Identifier Value
      0003-6951
    • Identifier Type
      International standard serial number
      Identifier Value
      1077-3118
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    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 105, 14 (2014) and may be found at http://dx.doi.org/10.1063/1.4897527, opens in a new window

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    Li, Xiao-Hang, Detchprohm, Theeradetch, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Yoder, P. Douglas, Dupuis, Russell D., Wang, Shuo, Wei, Yong O., Xie, Hongen, Fischer, Alec M., Ponce, Fernando A., Wernicke, Tim, Reich, Christoph, Martens, Martin, & Kneissl, Michael (2014). Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates. APPLIED PHYSICS LETTERS, 105(14), 0-0. http://dx.doi.org/10.1063/1.4897527

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