Description

InAs quantum dot multilayers have been grown using Al[subscript x]Ga[subscript 1−x] As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using

InAs quantum dot multilayers have been grown using Al[subscript x]Ga[subscript 1−x] As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method.

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Date Created
  • 2014-09-07
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4894295
    • Identifier Type
      International standard serial number
      Identifier Value
      0272-4944
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    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 9 (2014) and may be found at http://dx.doi.org/10.1063/1.4894295, opens in a new window

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    Jakomin, R., Kawabata, R. M. S., Mourao, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. A., & Souza, P. L. (2014). InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. JOURNAL OF APPLIED PHYSICS, 116(9), 093511. http://dx.doi.org/10.1063/1.4894295

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