InAs quantum dot multilayers have been grown using AlxGa1-x As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminum composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.
Details
- InAs Quantum Dot Growth on AlxGa1-xAs by Metalorganic Vapor Phase Epitaxy for Intermediate Band Solar Cells
- Jakomin, R. (Author)
- Kawabata, R. M. S. (Author)
- Mourao, R. T. (Author)
- Micha, D. N. (Author)
- Pires, M. P. (Author)
- Xie, H. (Author)
- Fischer, Alec M. (Author)
- Ponce, Fernando (Author)
- Souza, P. L. (Author)
- College of Liberal Arts and Sciences (Contributor)
- Digital object identifier: 10.1063/1.4894295
- Identifier TypeInternational standard serial numberIdentifier Value0272-4944
- Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 9 (2014) and may be found at http://dx.doi.org/10.1063/1.4894295, opens in a new window
Citation and reuse
Cite this item
This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.
Jakomin, R., Kawabata, R. M. S., Mourao, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. A., & Souza, P. L. (2014). InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. JOURNAL OF APPLIED PHYSICS, 116(9), 093511. http://dx.doi.org/10.1063/1.4894295