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The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing.

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Date Created
  • 2016-07-19
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4958831
    • Identifier Type
      International standard serial number
      Identifier Value
      0003-6951
    • Identifier Type
      International standard serial number
      Identifier Value
      1077-3118
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    Shi, J., Boccard, M., & Holman, Z. (2016). Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells. Applied Physics Letters, 109(3), 031601. doi:10.1063/1.4958831

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