Description

In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the

In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably.

Reuse Permissions
  • application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2017-09-21
    Resource Type
  • Text
  • Collections this item is in
    Identifier

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Nærland, T. U., Bernardini, S., Stoddard, N., Good, E., Augusto, A., & Bertoni, M. (2017). Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping. Energy Procedia, 124, 138-145. doi:10.1016/j.egypro.2017.09.321

    Machine-readable links