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- All Subjects: Optoelectronics
- Creators: King, Richard
Description
A Fundamental study of bulk, layered, and monolayers bromide lead perovskites structural, optical, and electrical properties have been studied as thickness changes. X-Ray Diffraction (XRD) and Raman spectroscopy measures the structural parameter showing how the difference in the thicknesses changes the crystal structures through observing changes in average lattice constant, atomic spacing, and lattice vibrations.
Optical and electrical properties have also been studied mainly focusing on the thickness effect on different properties where the Photoluminescence (PL) and exciton binding energies show energy shift as thickness of the material changes. Temperature dependent PL has shown different characteristics when comparing methylammonium lead bromide (MAPbBr3) to butylammonium lead bromide (BA2PbBr4) and comparing the two layered n=1 materials butylammonium lead bromide (BA2PbBr4) to butylammonium lead iodide (BA2PbI4). Time-resolved spectroscopy displays different lifetimes as thickness of bromide-based perovskite changes. Finally, thickness dependence (starting from monolayers) Kelvin Probe Force Microscopy (KPFM) of the layered materials BA2PbBr4, Butylammonium(methylammonium)lead bromide (BA2MAPb2Br7), and molybdenum sulfide (MoS2) were studied showing an exponential relation between the thickness of the materials and their surface potentials.
Optical and electrical properties have also been studied mainly focusing on the thickness effect on different properties where the Photoluminescence (PL) and exciton binding energies show energy shift as thickness of the material changes. Temperature dependent PL has shown different characteristics when comparing methylammonium lead bromide (MAPbBr3) to butylammonium lead bromide (BA2PbBr4) and comparing the two layered n=1 materials butylammonium lead bromide (BA2PbBr4) to butylammonium lead iodide (BA2PbI4). Time-resolved spectroscopy displays different lifetimes as thickness of bromide-based perovskite changes. Finally, thickness dependence (starting from monolayers) Kelvin Probe Force Microscopy (KPFM) of the layered materials BA2PbBr4, Butylammonium(methylammonium)lead bromide (BA2MAPb2Br7), and molybdenum sulfide (MoS2) were studied showing an exponential relation between the thickness of the materials and their surface potentials.
ContributorsAlenezi, Omar (Author) / Tongay, Sefaattin (Thesis advisor) / King, Richard (Thesis advisor) / Yao, Yu (Committee member) / Arizona State University (Publisher)
Created2019
Description
The molecular beam epitaxy growth of the III-V semiconductor alloy indium arsenide antimonide bismide (InAsSbBi) is investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on gallium antimonide (GaSb) substrates are examined. The relationships between Bi incorporation, surface morphology, growth temperature, and group-V flux are explored. A growth model is developed based on the kinetics of atomic desorption, incorporation, surface accumulation, and droplet formation. The model is applied to InAsSbBi, where the various process are fit to the Bi, Sb, and As mole fractions. The model predicts a Bi incorporation limit for lattice matched InAsSbBi grown on GaSb.The optical performance and bandgap energy of InAsSbBi is examined using photoluminescence spectroscopy. Emission is observed from low to room temperature with peaks ranging from 3.7 to 4.6 μm. The bandgap as function of temperature is determined from the first derivative maxima of the spectra fit to an Einstein single oscillator model. The photoluminescence spectra is observed to significantly broaden with Bi content as a result of lateral composition variations and the highly mismatched nature of Bi atoms, pairs, and clusters in the group-V sublattice.
A bowing model is developed for the bandgap and band offsets of the quinary alloy GaInAsSbBi and its quaternary constituents InAsSbBi and GaAsSbBi. The band anticrossing interaction due to the highly mismatched Bi atoms is incorporated into the relevant bowing terms. An algorithm is developed for the design of mid infrared GaInAsSbBi
quantum wells, with three degrees freedom to independently tune transition energy, in plane strain, and band edge offsets for desired electron and hole confinement.
The physical characteristics of the fundamental absorption edge of the relevant III-V binaries GaAs, GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed that describes the key physical characteristics of the absorption edge, including the bandgap energy, the Urbach tail, and the absorption coefficient at the bandgap.
The quantum efficiency and recombination lifetimes of bulk InAs0.911Sb0.089 grown by molecular beam epitaxy is investigated using excitation and temperature dependent steady state photoluminescence. The Shockley-Read-Hall, radiative, and Auger recombination lifetimes are determined.
A bowing model is developed for the bandgap and band offsets of the quinary alloy GaInAsSbBi and its quaternary constituents InAsSbBi and GaAsSbBi. The band anticrossing interaction due to the highly mismatched Bi atoms is incorporated into the relevant bowing terms. An algorithm is developed for the design of mid infrared GaInAsSbBi
quantum wells, with three degrees freedom to independently tune transition energy, in plane strain, and band edge offsets for desired electron and hole confinement.
The physical characteristics of the fundamental absorption edge of the relevant III-V binaries GaAs, GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed that describes the key physical characteristics of the absorption edge, including the bandgap energy, the Urbach tail, and the absorption coefficient at the bandgap.
The quantum efficiency and recombination lifetimes of bulk InAs0.911Sb0.089 grown by molecular beam epitaxy is investigated using excitation and temperature dependent steady state photoluminescence. The Shockley-Read-Hall, radiative, and Auger recombination lifetimes are determined.
ContributorsSchaefer, Stephen Thomas (Author) / Johnson, Shane R (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Goryll, Michael (Committee member) / King, Richard (Committee member) / Arizona State University (Publisher)
Created2020