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- Genre: Masters Thesis
Description
Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.
ContributorsRoos, Benjamin, 1990- (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
As the demand for power increases in populated areas, so will the demand for water. Current power plant technology relies heavily on the Rankine cycle in coal, nuclear and solar thermal power systems which ultimately use condensers to cool the steam in the system. In dry climates, the amount of water to cool off the condenser can be extremely large. Current wet cooling technologies such as cooling towers lose water from evaporation. One alternative to prevent this would be to implement a radiative cooling system. More specifically, a system that utilizes the volumetric radiation emission from water to the night sky could be implemented. This thesis analyzes the validity of a radiative cooling system that uses direct radiant emission to cool water. A brief study on potential infrared transparent cover materials such as polyethylene (PE) and polyvinyl carbonate (PVC) was performed. Also, two different experiments to determine the cooling power from radiation were developed and run. The results showed a minimum cooling power of 33.7 W/m2 for a vacuum insulated glass system and 37.57 W/m2 for a tray system with a maximum of 98.61 Wm-2 at a point when conduction and convection heat fluxes were considered to be zero. The results also showed that PE proved to be the best cover material. The minimum numerical results compared well with other studies performed in the field using similar techniques and materials. The results show that a radiative cooling system for a power plant could be feasible given that the cover material selection is narrowed down, an ample amount of land is available and an economic analysis is performed proving it to be cost competitive with conventional systems.
ContributorsOvermann, William (Author) / Phelan, Patrick (Thesis advisor) / Trimble, Steve (Committee member) / Taylor, Robert (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
Plasmon resonance in nanoscale metallic structures has shown its ability to concentrate electromagnetic energy into sub-wavelength volumes. Metal nanostructures exhibit a high extinction coefficient in the visible and near infrared spectrum due to their large absorption and scattering cross sections corresponding to their surface plasmon resonance. Hence, they can serve as an attractive candidate for solar energy conversion. Recent papers have showed that dielectric core/metallic shell nanoparticles yielded a plasmon resonance wavelength tunable from visible to infrared by changing the ratio of core radius to the total radius. Therefore it is interesting to develop a dispersion of core-shell multifunctional nanoparticles capable of dynamically changing their volume ratio and thus their spectral radiative properties. Nanoparticle suspensions (nanofluids) are known to offer a variety of benefits for thermal transport and energy conversion. Nanofluids have been proven to increase the efficiency of the photo-thermal energy conversion process in direct solar absorption collectors (DAC). Combining these two cutting-edge technologies enables the use of core-shell nanoparticles to control the spectral and radiative properties of plasmonic nanofluids in order to efficiently harvest and convert solar energy. Plasmonic nanofluids that have strong energy concentrating capacity and spectral selectivity can be used in many high-temperature energy systems where radiative heat transport is essential. In this thesis，the surface plasmon resonance effect and the wavelength tuning ranges for different metallic shell nanoparticles are investigated, the solar-weighted efficiencies of corresponding core-shell nanoparticle suspensions are explored, and a quantitative study of core-shell nanoparticle suspensions in a DAC system is provided. Using core-shell nanoparticle dispersions, it is possible to create efficient spectral solar absorption fluids and design materials for applications which require variable spectral absorption or scattering.
ContributorsLv, Wei (Author) / Phelan, Patrick E (Thesis advisor) / Dai, Lenore (Committee member) / Prasher, Ravi (Committee member) / Arizona State University (Publisher)
Created2012
Description
Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
ContributorsChen, Yitao (Author) / Holbert, Keith E. (Thesis advisor) / Clark, Lawrence T. (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016
Description
It has been hypothesized that the ~25 km Rochechouart-Chassenon impact structure (RCIS) in the NW Massif Central, France, was formed during a Late Triassic (ca. 214 Ma) terrestrial impact event that produced a catena of several large craters. Testing this hypothesis, and assessing its possible impacts on biological evolution, requires both accurate and precise dating of candidate impact structures. Like many of these structures, the age of the RCIS is controversial because geochronological datasets yield contradictory results, even when a single isotopic system is used; for example, the two most recent 40Ar/39Ar studies of RCIS yielded statistically inconsistent dates of 201 ± 2 Ma (2σ) and 214 ± 8 Ma (2σ). While the precision offered by various geochronometers used to date impact structures varies significantly, a fair way to assess the confidence scientists might have in the accuracy of an impact age is to establish whether or not multiple chronometers yield statistically indistinguishable ages when applied to that structure. With that in mind, I have applied the (U-Th)/He, U/Pb, and radiation damage chronometers to zircons separated from two different RCIS impactites. My best estimate of the zircon (U-Th)/He age of the impact event is 191.6 ± 9.1 Ma at the 95% confidence level. U/Pb zircon dates suggest that most zircons in the RCIS target rocks were not completely reset during impact, but a subset (n = 8) of zircons appear to have crystallized from the impact melt or to have been completely reset; these zircons indicate a U/Pb impact age of 202.6 ± 5.8 Ma (95% confidence level). Zircon radiation damage dates are highly variable, indicating that the RCIS event resulted only in partial annealing of pre-impact zircon in the country rock, but a small sub-population of zircons yielded a mean date of 211 ± 13 Ma (95% confidence level). These results – all statistically indistinguishable from the previously published 40Ar/39Ar date of 201 ± 2 Ma – collectively argue that the impact age was near the presently agreed upon Triassic-Jurassic boundary. This age raises the possibility that seismite and tsunamite deposits found in the present-day British Isles may be related to the RCIS.
ContributorsHorne, Audrey (Author) / Hodges, Kip V. (Thesis advisor) / van Soest, Matthijs (Committee member) / Wittmann, Axel (Committee member) / Arizona State University (Publisher)
Created2016
Description
The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.
ContributorsSrinivasan Gopalan, Madusudanan (Author) / Barnaby, Hugh (Thesis advisor) / Holbert, Keith E. (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2010