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- All Subjects: engineering
- Creators: Jiao, Yang
Description
For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (µXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale µXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging.
In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.
The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.
The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
ContributorsMertens, James Charles Edwin (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Neithalath, Narayanan (Committee member) / Arizona State University (Publisher)
Created2015
Description
In this dissertation, the results of our comprehensive computational studies of disordered jammed (i.e., mechanically stable) packings of hard particles are presented, including the family of superdisks in 2D and ellipsoids in 3D Euclidean space. Following a very brief introduction to the hard-particle systems, the event driven molecular dynamics (EDMD) employed to generate the packing ensembles will be discussed. A large number of 2D packing configurations of superdisks are subsequently analyzed, through which a relatively accurate theoretical scheme for packing-fraction prediction based on local particle contact configurations is proposed and validated via additional numerical simulations. Moreover, the studies on binary ellipsoid packing in 3D are briefly discussed and the effects of different geometrical parameters on the final packing fraction are analyzed.
ContributorsXu, Yaopengxiao (Author) / Jiao, Yang (Thesis advisor) / Oswald, Jay (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this dissertation, three complex material systems including a novel class of hyperuniform composite materials, cellularized collagen gel and low melting point alloy (LMPA) composite are investigated, using statistical pattern characterization, stochastic microstructure reconstruction and micromechanical analysis. In Chapter 1, an introduction of this report is provided, in which a brief review is made about these three material systems. In Chapter 2, detailed discussion of the statistical morphological descriptors and a stochastic optimization approach for microstructure reconstruction is presented. In Chapter 3, the lattice particle method for micromechanical analysis of complex heterogeneous materials is introduced. In Chapter 4, a new class of hyperuniform heterogeneous material with superior mechanical properties is investigated. In Chapter 5, a bio-material system, i.e., cellularized collagen gel is modeled using correlation functions and stochastic reconstruction to study the collective dynamic behavior of the embed tumor cells. In chapter 6, LMPA soft robotic system is generated by generalizing the correlation functions and the rigidity tunability of this smart composite is discussed. In Chapter 7, a future work plan is presented.
ContributorsXu, Yaopengxiao (Author) / Jiao, Yang (Thesis advisor) / Liu, Yongming (Committee member) / Wang, Qing Hua (Committee member) / Ren, Yi (Committee member) / Arizona State University (Publisher)
Created2018
Description
Increasing density of microelectronic packages, results in an increase in thermal and mechanical stresses within the various layers of the package. To accommodate the high-performance demands, the materials used in the electronic package would also require improvement. Specifically, the damage that often occurs in solders that function as die-attachment and thermal interfaces need to be addressed. This work evaluates and characterizes thermo-mechanical damage in two material systems – Electroplated Tin and Sintered Nano-Silver solder.
Tin plated electrical contacts are prone to formation of single crystalline tin whiskers which can cause short circuiting. A mechanistic model of their formation, evolution and microstructural influence is still not fully understood. In this work, growth of mechanically induced tin whiskers/hillocks is studied using in situ Nano-indentation and Electron Backscatter Diffraction (EBSD). Electroplated tin was indented and monitored in vacuum to study growth of hillocks without the influence of atmosphere. Thermal aging was done to study the effect of intermetallic compounds. Grain orientation of the hillocks and the plastically deformed region surrounding the indent was studied using Focused Ion Beam (FIB) lift-out technique. In addition, micropillars were milled on the surface of electroplated Sn using FIB to evaluate the yield strength and its relation to Sn grain size.
High operating temperature power electronics use wide band-gap semiconductor devices (Silicon Carbide/Gallium Nitride). The operating temperature of these devices can exceed 250oC, preventing use of traditional Sn-solders as Thermal Interface materials (TIM). At high temperature, the thermomechanical stresses can severely degrade the reliability and life of the device. In this light, new non-destructive approach is needed to understand the damage mechanism when subjected to reliability tests such as thermal cycling. In this work, sintered nano-Silver was identified as a promising high temperature TIM. Sintered nano-Silver samples were fabricated and their shear strength was evaluated. Thermal cycling tests were conducted and damage evolution was characterized using a lab scale 3D X-ray system to periodically assess changes in the microstructure such as cracks, voids, and porosity in the TIM layer. The evolution of microstructure and the effect of cycling temperature during thermal cycling are discussed.
Tin plated electrical contacts are prone to formation of single crystalline tin whiskers which can cause short circuiting. A mechanistic model of their formation, evolution and microstructural influence is still not fully understood. In this work, growth of mechanically induced tin whiskers/hillocks is studied using in situ Nano-indentation and Electron Backscatter Diffraction (EBSD). Electroplated tin was indented and monitored in vacuum to study growth of hillocks without the influence of atmosphere. Thermal aging was done to study the effect of intermetallic compounds. Grain orientation of the hillocks and the plastically deformed region surrounding the indent was studied using Focused Ion Beam (FIB) lift-out technique. In addition, micropillars were milled on the surface of electroplated Sn using FIB to evaluate the yield strength and its relation to Sn grain size.
High operating temperature power electronics use wide band-gap semiconductor devices (Silicon Carbide/Gallium Nitride). The operating temperature of these devices can exceed 250oC, preventing use of traditional Sn-solders as Thermal Interface materials (TIM). At high temperature, the thermomechanical stresses can severely degrade the reliability and life of the device. In this light, new non-destructive approach is needed to understand the damage mechanism when subjected to reliability tests such as thermal cycling. In this work, sintered nano-Silver was identified as a promising high temperature TIM. Sintered nano-Silver samples were fabricated and their shear strength was evaluated. Thermal cycling tests were conducted and damage evolution was characterized using a lab scale 3D X-ray system to periodically assess changes in the microstructure such as cracks, voids, and porosity in the TIM layer. The evolution of microstructure and the effect of cycling temperature during thermal cycling are discussed.
ContributorsLujan Regalado, Irene (Author) / Chawla, Nikhilesh (Thesis advisor) / Frear, Darrel (Committee member) / Rajagopalan, Jagannathan (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
Description
Nanolaminate materials are layered composites with layer thickness ≤ 100 nm. They exhibit unique properties due to their small length scale, the presence of a high number of interfaces and the effect of imposed constraint. This thesis focuses on the mechanical behavior of Al/SiC nanolaminates. The high strength of ceramics combined with the ductility of Al makes this combination desirable. Al/SiC nanolaminates were synthesized through magnetron sputtering and have an overall thickness of ~ 20 μm which limits the characterization techniques to microscale testing methods. A large amount of work has already been done towards evaluating their mechanical properties under indentation loading and micropillar compression. The effects of temperature, orientation and layer thickness have been well established. Al/SiC nanolaminates exhibited a flaw dependent deformation, anisotropy with respect to loading direction and strengthening due to imposed constraint. However, the mechanical behavior of nanolaminates under tension and fatigue loading has not yet been studied which is critical for obtaining a complete understanding of their deformation behavior. This thesis fills this gap and presents experiments which were conducted to gain an insight into the behavior of nanolaminates under tensile and cyclic loading. The effect of layer thickness, tension-compression asymmetry and effect of a wavy microstructure on mechanical response have been presented. Further, results on in situ micropillar compression using lab-based X-ray microscope through novel experimental design are also presented. This was the first time when a resolution of 50 nms was achieved during in situ micropillar compression in a lab-based setup. Pores present in the microstructure were characterized in 3D and sites of damage initiation were correlated with the channel of pores present in the microstructure.
The understanding of these deformation mechanisms paved way for the development of co-sputtered Al/SiC composites. For these composites, Al and SiC were sputtered together in a layer. The effect of change in the atomic fraction of SiC on the microstructure and mechanical properties were evaluated. Extensive microstructural characterization was performed at the nanoscale level and Al nanocrystalline aggregates were observed dispersed in an amorphous matrix. The modulus and hardness of co- sputtered composites were much higher than their traditional counterparts owing to denser atomic packing and the absence of synthesis induced defects such as pores and columnar boundaries.
The understanding of these deformation mechanisms paved way for the development of co-sputtered Al/SiC composites. For these composites, Al and SiC were sputtered together in a layer. The effect of change in the atomic fraction of SiC on the microstructure and mechanical properties were evaluated. Extensive microstructural characterization was performed at the nanoscale level and Al nanocrystalline aggregates were observed dispersed in an amorphous matrix. The modulus and hardness of co- sputtered composites were much higher than their traditional counterparts owing to denser atomic packing and the absence of synthesis induced defects such as pores and columnar boundaries.
ContributorsSingh, Somya (Author) / Chawla, Nikhilesh (Thesis advisor) / Neithalath, Narayanan (Committee member) / Jiao, Yang (Committee member) / Mara, Nathan (Committee member) / Arizona State University (Publisher)
Created2018
Description
The Phoenix CubeSat is a 3U Earth imaging CubeSat which will take infrared (IR) photos of cities in the United Stated to study the Urban Heat Island Effect, (UHI) from low earth orbit (LEO). It has many different components that need to be powered during the life of its mission. The only power source during the mission will be its solar panels. It is difficult to calculate power generation from solar panels by hand because of the different orientations the satellite will be positioned in during orbit; therefore, simulation will be used to produce power generation data. Knowing how much power is generated is integral to balancing the power budget, confirming whether there is enough power for all the components, and knowing whether there will be enough power in the batteries during eclipse. This data will be used to create an optimal design for the Phoenix CubeSat to accomplish its mission.
ContributorsBarakat, Raymond John (Author) / White, Daniel (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
Current technology does not allow for the full amount of power produced by solar arrays (PV) on spacecraft to be utilized. The arrays are designed with non-reconfigurable architectures and sent on fifteen to twenty year long missions. They cannot be changed once they are in space, so the arrays are designed for the end of life. Throughout their lifetime, solar arrays can degrade in power producing capabilities anywhere from 20% to 50%. Because there is such a drastic difference in the beginning and end of life power production, and because they cannot be reconfigured, a new design has been found necessary in order to increase power production. Reconfiguration allows the solar arrays to achieve maximum power producing capabilities at both the beginning and end of their lives. With the potential to increase power production by 50%, the reconfiguration design consists of a switching network to be able to utilize any combination of cells. The design for reconfiguration must meet the power requirements of the solar array. This thesis will explore different designs for reconfiguration, as well as possible switches for implementation. It will also review other methods to increase power production, as well as discuss future work in this field.
ContributorsJohnson, Everett Hope (Author) / Kitchen, Jennifer (Thesis director) / Ozev, Sule (Committee member) / School of International Letters and Cultures (Contributor) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
Fracture phenomena have been extensively studied in the last several decades. Continuum mechanics-based approaches, such as finite element methods and extended finite element methods, are widely used for fracture simulation. One well-known issue of these approaches is the stress singularity resulted from the spatial discontinuity at the crack tip/front. The requirement of guiding criteria for various cracking behaviors, such as initiation, propagation, and branching, also poses some challenges. Comparing to the continuum based formulation, the discrete approaches, such as lattice spring method, discrete element method, and peridynamics, have certain advantages when modeling various fracture problems due to their intrinsic characteristics in modeling discontinuities.
A novel, alternative, and systematic framework based on a nonlocal lattice particle model is proposed in this study. The uniqueness of the proposed model is the inclusion of both pair-wise local and multi-body nonlocal potentials in the formulation. First, the basic ideas of the proposed framework for 2D isotropic solid are presented. Derivations for triangular and square lattice structure are discussed in detail. Both mechanical deformation and fracture process are simulated and model verification and validation are performed with existing analytical solutions and experimental observations. Following this, the extension to general 3D isotropic solids based on the proposed local and nonlocal potentials is given. Three cubic lattice structures are discussed in detail. Failure predictions using the 3D simulation are compared with experimental testing results and very good agreement is observed. Next, a lattice rotation scheme is proposed to account for the material orientation in modeling anisotropic solids. The consistency and difference compared to the classical material tangent stiffness transformation method are discussed in detail. The implicit and explicit solution methods for the proposed lattice particle model are also discussed. Finally, some conclusions and discussions based on the current study are drawn at the end.
A novel, alternative, and systematic framework based on a nonlocal lattice particle model is proposed in this study. The uniqueness of the proposed model is the inclusion of both pair-wise local and multi-body nonlocal potentials in the formulation. First, the basic ideas of the proposed framework for 2D isotropic solid are presented. Derivations for triangular and square lattice structure are discussed in detail. Both mechanical deformation and fracture process are simulated and model verification and validation are performed with existing analytical solutions and experimental observations. Following this, the extension to general 3D isotropic solids based on the proposed local and nonlocal potentials is given. Three cubic lattice structures are discussed in detail. Failure predictions using the 3D simulation are compared with experimental testing results and very good agreement is observed. Next, a lattice rotation scheme is proposed to account for the material orientation in modeling anisotropic solids. The consistency and difference compared to the classical material tangent stiffness transformation method are discussed in detail. The implicit and explicit solution methods for the proposed lattice particle model are also discussed. Finally, some conclusions and discussions based on the current study are drawn at the end.
ContributorsChen, Hailong (Author) / Liu, Yongming (Thesis advisor) / Jiao, Yang (Committee member) / Mignolet, Marc (Committee member) / Oswald, Jay (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2015