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Description
MESFETs are used in high frequency applications and are typically made from GaAs. Dr. Trevor Thornton designed a silicon-on-insulator MESFET \u2014 a cheaper alternative with competitive capabilities. This paper concerns the characterization and modeling of this device to exhibit its marketability as a CMOS integrated transistor. Overviews of the MESFET's history and DLTS (deep level transient spectroscopy) are offered.
Date Created
2014-05
Contributors
- Terrell, Catherine Elaine (Author)
- Thornton, Trevor (Thesis director)
- Young, Alexander (Committee member)
- Barrett, The Honors College (Contributor)
- Electrical Engineering Program (Contributor)
Topical Subject
Resource Type
Extent
7 pages
Language
Copyright Statement
In Copyright
Primary Member of
Series
Academic Year 2013-2014
Handle
https://hdl.handle.net/2286/R.I.22734
Level of coding
minimal
Cataloging Standards
System Created
- 2017-10-30 02:50:57
System Modified
- 2021-08-11 04:09:57
- 1 year 9 months ago
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