Faculty and Staff

Readability formulas are used widely in education, and increasingly in business and government. Over 30 years of research on more than 200 readability formulas has demonstrated moderate to strong predictive correlations with reading comprehension. In this study, five well-known readability formulas correlated highly with each other when applied to selected recent historical articles (N = 22) from two music education research journals. The mean level of difficulty (readability) for all 22 articles was grade 14.04, near the beginning of the second year of college. Since research shows that most people read below their highest completed school grade and also prefer easier materials, this is probably an appropriate level of difficulty for the presumptive readers of these two journals (i.e., holders of undergraduate and graduate degrees). Professors, librarians, and others responsible for guiding students toward reading material at appropriate levels of readability could benefit from these results.

Poster about meeting the academic and cultural needs of international students at the Arizona State University Libraries and the University of Arizona Libraries. The poster presentation focuses on:

1. Strategies to promote information literacy skills of international students in the two university libraries.
2. What the libraries are doing to improve services to meet the needs and encourage library use among international students.
3. Partnerships that have been established with other academic departments or institutions.

Readability formulas are used widely in education, and increasingly in business and government. Over 30 years of research on more than 200 readability formulas has demonstrated moderate to strong predictive correlations with reading comprehension. In this study, five well-known readability formulas correlated highly with each other when applied to selected recent historical articles (N = 22) from two music education research journals. The mean level of difficulty (readability) for all 22 articles was grade 14.04, near the beginning of the second year of college. Since research shows that most people read below their highest completed school grade and also prefer easier materials, this is probably an appropriate level of difficulty for the presumptive readers of these two journals (i.e., holders of undergraduate and graduate degrees). Professors, librarians, and others responsible for guiding students toward reading material at appropriate levels of readability could benefit from these results.

||中文摘要
《音樂教育研究期刊》與《音樂教育歷史研究期刊》中部分文章的閱讀難度水準
Alexandra H. Humphreys
Arizona State University—Phoenix, U.S.A.
Jere T. Humphreys
Arizona State University—Tempe, U.S.A.
可讀性估算公式被廣泛運用在教育領域，而且在商業和政府部門的使用頻率與日俱增。在過去的30 年裏，
研究人員共研發了200 多種可讀性估算公式，這些公式所估算的可讀性指標與實際閱讀理解程度具有中度
或很強的相關性。本文使用了五種著名的可讀性估算公式來評估最近發表的22 篇音樂教育史文章，發現這
五種公式的計算結果有很強的相關性。這22 篇文章的平均閱讀難度水準是14.04， 接近大學二年級初期的
閱讀水準。由於先前的研究结果显示大部分人喜歡閱讀難度水準低於本人學歷水準的文章以及比較容易理
解的文章，這兩種期刊中文章的閱讀難度水準非常適合預計的閱讀對象（有學士學位和研究生學位的人）。
本文研究結果可能會對那些大學教授，圖書館員和其他負責指導學生閱讀的人員有所幫助。

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO₃ grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO₃ polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO₃ tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO₃ is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge_1-y Sn_y i-layers spanning a broad compositional range below and above the crossover Sn concentration y_c where the Ge_1-y Sn_y alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

The compositional dependence of the lowest direct and indirect band gaps in Ge_1-ySn_y alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps. However, detailed modeling of these room temperature spectra is required to extract the band gap values with the high accuracy required to determine the Sn concentration y_c at which the alloy becomes a direct gap semiconductor. For the direct gap, this is accomplished using a microscopic model that allows the determination of direct gap energies with meV accuracy. For the indirect gap, it is shown that current theoretical models are inadequate to describe the emission properties of systems with close indirect and direct transitions. Accordingly, an ad hoc procedure is used to extract the indirect gap energies from the data. For y < 0.1 the resulting direct gap compositional dependence is given by ΔE₀ = −(3.57 ± 0.06)y (in eV). For the indirect gap, the corresponding expression is ΔE_ind = −(1.64 ± 0.10)y (in eV). If a quadratic function of composition is used to express the two transition energies over the entire compositional range 0 ≤ y ≤ 1, the quadratic (bowing) coefficients are found to be b₀ = 2.46 ± 0.06 eV (for E0) and b_ind = 1.03 ± 0.11 eV (for E_ind). These results imply a crossover concentration y_c = $0.073 [+0.007 over -0.006], much lower than early theoretical predictions based on the virtual crystal approximation, but in better agreement with predictions based on large atomic supercells.