Theses and dissertations

This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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High Efficiency Electronics for Space Applications

Description
The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an…

The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an extremely cost effective way. Higher integration leads to electronics with increased functionality and a smaller finished product. The MESFETs are designed in-house by the research group led by Dr. Trevor Thornton. The layouts are then sent to multi-project wafer (MPW) integrated circuit foundry companies, such as the Metal Oxide Semiconductor Implementation Service (MOSIS) to be fabricated. Once returned, the electrical characteristics of the devices are measured. The MESFET has been implemented in various applications by the research group, including the low dropout linear regulator (LDO) and RF power amplifier. An advantage of the MESFET is that it can function in extreme environments such as space, allowing for complex electrical systems to continue functioning properly where traditional transistors would fail.
ContributorsKam, Jason (Author) / Thornton, Trevor (Thesis director) / Goryll, Michael (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2015-05

Radiation Testing and Effects on NMOS Transistor Technologies

Description

This thesis project explores the TID susceptibility of 12nm FinFETs. Along with the basic effects, the mechanisms and patterns of these effects are analyzed and reported.

ContributorsWallace, Trace (Author) / Barnaby, Hugh (Thesis director) / Marinella, Mathew (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor) / Dean, W.P. Carey School of Business (Contributor)
Created2022-05