This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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Description
NGExtract 2 is a complete transistor (MOSFET) parameter extraction solution based upon the original computer program NGExtract by Rahul Shringarpure written in February 2007. NGExtract 2 is written in Java and based around the circuit simulator NGSpice. The goal of the program is to be used to produce

NGExtract 2 is a complete transistor (MOSFET) parameter extraction solution based upon the original computer program NGExtract by Rahul Shringarpure written in February 2007. NGExtract 2 is written in Java and based around the circuit simulator NGSpice. The goal of the program is to be used to produce accurate transistor models based around real-world transistor data. The program contains numerous improvements to the original program:
• Completely rewritten with performance and usability in mind
• Cross-Platform vs. Linux Only
• Simple installation procedure vs. compilation and manual library configuration
• Self-contained, single file runtime
• Particle Swarm Optimization routine
NGExtract 2 works by plotting the Ids vs. Vds and Ids vs. Vgs curves of a simulation model and the measured, real-world data. The user can adjust model parameters and re-simulate to attempt to match the curves. The included Particle Swarm Optimization routine attempts to automate this process by iteratively attempting to improve a solution by measuring its sum-squared error against the real-world data that the user has provided.
ContributorsVetrano, Michael Thomas (Author) / Allee, David (Thesis director) / Gorur, Ravi (Committee member) / Bakkaloglu, Bertan (Committee member) / Barrett, The Honors College (Contributor) / Computer Science and Engineering Program (Contributor)
Created2013-05
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Description
The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an

The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an extremely cost effective way. Higher integration leads to electronics with increased functionality and a smaller finished product. The MESFETs are designed in-house by the research group led by Dr. Trevor Thornton. The layouts are then sent to multi-project wafer (MPW) integrated circuit foundry companies, such as the Metal Oxide Semiconductor Implementation Service (MOSIS) to be fabricated. Once returned, the electrical characteristics of the devices are measured. The MESFET has been implemented in various applications by the research group, including the low dropout linear regulator (LDO) and RF power amplifier. An advantage of the MESFET is that it can function in extreme environments such as space, allowing for complex electrical systems to continue functioning properly where traditional transistors would fail.
ContributorsKam, Jason (Author) / Thornton, Trevor (Thesis director) / Goryll, Michael (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2015-05
Description

This thesis project explores the TID susceptibility of 12nm FinFETs. Along with the basic effects, the mechanisms and patterns of these effects are analyzed and reported.

ContributorsWallace, Trace (Author) / Barnaby, Hugh (Thesis director) / Marinella, Mathew (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor) / Dean, W.P. Carey School of Business (Contributor)
Created2022-05