ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Newman, Nathan
Description
In this research, our goal was to fabricate Josephson junctions that can be stably processed at 300°C or higher. With the purpose of integrating Josephson junction fabrication with the current semiconductor circuit fabrication process, back-end process temperatures (>350 °C) will be a key for producing large scale junction circuits reliably, which requires the junctions to be more thermally stable than current Nb/Al-AlOx/Nb junctions. Based on thermodynamics, Hf was chosen to produce thermally stable Nb/Hf-HfOx/Nb superconductor tunnel Josephson junctions that can be grown or processed at elevated temperatures. Also elevated synthesis temperatures improve the structural and electrical properties of Nb electrode layers that could potentially improve junction device performance. The refractory nature of Hf, HfO2 and Nb allow for the formation of flat, abrupt and thermally-stable interfaces. But the current Al-based barrier will have problems when using with high-temperature grown and high-quality Nb. So our work is aimed at using Nb grown at elevated temperatures to fabricate thermally stable Josephson tunnel junctions. As a junction barrier metal, Hf was studied and compared with the traditional Al-barrier material. We have proved that Hf-HfOx is a good barrier candidate for high-temperature synthesized Josephson junction. Hf deposited at 500 °C on Nb forms flat and chemically abrupt interfaces. Nb/Hf-HfOx/Nb Josephson junctions were synthesized, fabricated and characterized with different oxidizing conditions. The results of materials characterization and junction electrical measurements are reported and analyzed. We have improved the annealing stability of Nb junctions and also used high-quality Nb grown at 500 °C as the bottom electrode successfully. Adding a buffer layer or multiple oxidation steps improves the annealing stability of Josephson junctions. We also have attempted to use the Atomic Layer Deposition (ALD) method for the growth of Hf oxide as the junction barrier and got tunneling results.
ContributorsHuang, Mengchu, 1987- (Author) / Newman, Nathan (Thesis advisor) / Rowell, John M. (Committee member) / Singh, Rakesh K. (Committee member) / Chamberlin, Ralph (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2013
Description
The study of high energy particle irradiation effect on Josephson junction tri-layers is relevant to applications in space and radioactive environments. It also allows us to investigate the influence of defects and interfacial intermixing on the junction electrical characteristics. In this work, we studied the influence of 2MeV Helium ion irradiation with doses up to 5.2×1016 ions/cm2 on the tunneling behavior of Nb/Al/AlOx/Nb Josephson junctions. Structural and analytical TEM characterization, combined with SRIM modeling, indicates that over 4nm of intermixing occurred at the interfaces. EDX analysis after irradiation, suggests that the Al and O compositions from the barrier are collectively distributed together over a few nanometers. Surprisingly, the IV characteristics were largely unchanged. The normal resistance, Rn, increased slightly (<20%) after the initial dose of 3.5×1015 ions/cm2 and remained constant after that. This suggests that tunnel barrier electrical properties were not affected much, despite the significant changes in the chemical distribution of the barrier's Al and O shown in SRIM modeling and TEM pictures. The onset of quasi-particle current, sum of energy gaps (2Δ), dropped systematically from 2.8meV to 2.6meV with increasing dosage. Similarly, the temperature onset of the Josephson current dropped from 9.2K to 9.0K. This suggests that the order parameter at the barrier interface has decreased as a result of a reduced mean free path in the Al proximity layer and a reduction in the transition temperature of the Nb electrode near the barrier. The dependence of Josephson current on the magnetic field and temperature does not change significantly with irradiation, suggesting that intermixing into the Nb electrode is significantly less than the penetration depth.
ContributorsZhang, Tiantian (Author) / Newman, Nathan (Thesis advisor) / Rowell, John M (Committee member) / Singh, Rakesh K. (Committee member) / Chamberlin, Ralph (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2012