ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
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- Creators: Cao, Yu
Description
Static CMOS logic has remained the dominant design style of digital systems for
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
ContributorsYang, Jinghua (Author) / Vrudhula, Sarma (Thesis advisor) / Barnaby, Hugh (Committee member) / Cao, Yu (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018
Description
Over the past few decades, the silicon complementary-metal-oxide-semiconductor (CMOS) technology has been greatly scaled down to achieve higher performance, density and lower power consumption. As the device dimension is approaching its fundamental physical limit, there is an increasing demand for exploration of emerging devices with distinct operating principles from conventional CMOS. In recent years, many efforts have been devoted in the research of next-generation emerging non-volatile memory (eNVM) technologies, such as resistive random access memory (RRAM) and phase change memory (PCM), to replace conventional digital memories (e.g. SRAM) for implementation of synapses in large-scale neuromorphic computing systems.
Essentially being compact and “analog”, these eNVM devices in a crossbar array can compute vector-matrix multiplication in parallel, significantly speeding up the machine/deep learning algorithms. However, non-ideal eNVM device and array properties may hamper the learning accuracy. To quantify their impact, the sparse coding algorithm was used as a starting point, where the strategies to remedy the accuracy loss were proposed, and the circuit-level design trade-offs were also analyzed. At architecture level, the parallel “pseudo-crossbar” array to prevent the write disturbance issue was presented. The peripheral circuits to support various parallel array architectures were also designed. One key component is the read circuit that employs the principle of integrate-and-fire neuron model to convert the analog column current to digital output. However, the read circuit is not area-efficient, which was proposed to be replaced with a compact two-terminal oscillation neuron device that exhibits metal-insulator-transition phenomenon.
To facilitate the design exploration, a circuit-level macro simulator “NeuroSim” was developed in C++ to estimate the area, latency, energy and leakage power of various neuromorphic architectures. NeuroSim provides a wide variety of design options at the circuit/device level. NeuroSim can be used alone or as a supporting module to provide circuit-level performance estimation in neural network algorithms. A 2-layer multilayer perceptron (MLP) simulator with integration of NeuroSim was demonstrated to evaluate both the learning accuracy and circuit-level performance metrics for the online learning and offline classification, as well as to study the impact of eNVM reliability issues such as data retention and write endurance on the learning performance.
Essentially being compact and “analog”, these eNVM devices in a crossbar array can compute vector-matrix multiplication in parallel, significantly speeding up the machine/deep learning algorithms. However, non-ideal eNVM device and array properties may hamper the learning accuracy. To quantify their impact, the sparse coding algorithm was used as a starting point, where the strategies to remedy the accuracy loss were proposed, and the circuit-level design trade-offs were also analyzed. At architecture level, the parallel “pseudo-crossbar” array to prevent the write disturbance issue was presented. The peripheral circuits to support various parallel array architectures were also designed. One key component is the read circuit that employs the principle of integrate-and-fire neuron model to convert the analog column current to digital output. However, the read circuit is not area-efficient, which was proposed to be replaced with a compact two-terminal oscillation neuron device that exhibits metal-insulator-transition phenomenon.
To facilitate the design exploration, a circuit-level macro simulator “NeuroSim” was developed in C++ to estimate the area, latency, energy and leakage power of various neuromorphic architectures. NeuroSim provides a wide variety of design options at the circuit/device level. NeuroSim can be used alone or as a supporting module to provide circuit-level performance estimation in neural network algorithms. A 2-layer multilayer perceptron (MLP) simulator with integration of NeuroSim was demonstrated to evaluate both the learning accuracy and circuit-level performance metrics for the online learning and offline classification, as well as to study the impact of eNVM reliability issues such as data retention and write endurance on the learning performance.
ContributorsChen, Pai-Yu (Author) / Yu, Shimeng (Thesis advisor) / Cao, Yu (Committee member) / Seo, Jae-Sun (Committee member) / Chakrabarti, Chaitali (Committee member) / Arizona State University (Publisher)
Created2018
Description
The aging mechanism in devices is prone to uncertainties due to dynamic stress conditions. In AMS circuits these can lead to momentary fluctuations in circuit voltage that may be missed by a compact model and hence cause unpredictable failure. Firstly, multiple aging effects in the devices may have underlying correlations. The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. Secondly, the prevalent reliability analysis lacks a direct validation of the lifetime of devices and circuits. The aging mechanism of BTI causes gradual degradation of the device leading to threshold voltage shift and increasing the failure rate. In the 28nm HKMG technology, contribution of BTI to NMOS degradation has become significant at high temperature as compared to Channel Hot Carrier (CHC). This requires revising the End of Lifetime (EOL) calculation based on contribution from induvial aging effects especially in feedback loops. Conventionally, aging in devices is extrapolated from a short-term measurement, but this practice results in unreliable prediction of EOL caused by variability in initial parameters and stress conditions. To mitigate the extrapolation issues and improve predictability, this work aims at providing a new approach to test the device to EOL in a fast and controllable manner. The contributions of this thesis include: (1) based on stochastic trapping/de-trapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. Moreover, these models are implemented into circuit simulation, illustrating a significant increase in failure rate due to accelerated BTI, (2) developing a model to predict accelerated aging under special conditions like feedback loops and stacked inverters, (3) introducing a feedback loop based test methodology called Adaptive Accelerated Aging (AAA) that can generate accurate aging data till EOL, (4) presenting simulation and experimental data for the models and providing test setup for multiple stress conditions, including those for achieving EOL in 1 hour device as well as ring oscillator (RO) circuit for validation of the proposed methodology, and (5) scaling these models for finding a guard band for VLSI design circuits that can provide realistic aging impact.
ContributorsPatra, Devyani (Author) / Cao, Yu (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2017
Description
Semiconductor memory is a key component of the computing systems. Beyond the conventional memory and data storage applications, in this dissertation, both mainstream and eNVM memory technologies are explored for radiation environment, hardware security system and machine learning applications.
In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level.
Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well.
Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm.
Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.
In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level.
Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well.
Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm.
Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.
ContributorsLiu, Rui (Author) / Yu, Shimeng (Thesis advisor, Committee member) / Cao, Yu (Committee member) / Barnaby, Hugh (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018
Description
Deep learning (DL) has proved itself be one of the most important developements till date with far reaching impacts in numerous fields like robotics, computer vision, surveillance, speech processing, machine translation, finance, etc. They are now widely used for countless applications because of their ability to generalize real world data, robustness to noise in previously unseen data and high inference accuracy. With the ability to learn useful features from raw sensor data, deep learning algorithms have out-performed tradinal AI algorithms and pushed the boundaries of what can be achieved with AI. In this work, we demonstrate the power of deep learning by developing a neural network to automatically detect cough instances from audio recorded in un-constrained environments. For this, 24 hours long recordings from 9 dierent patients is collected and carefully labeled by medical personel. A pre-processing algorithm is proposed to convert event based cough dataset to a more informative dataset with start and end of coughs and also introduce data augmentation for regularizing the training procedure. The proposed neural network achieves 92.3% leave-one-out accuracy on data captured in real world.
Deep neural networks are composed of multiple layers that are compute/memory intensive. This makes it difficult to execute these algorithms real-time with low power consumption using existing general purpose computers. In this work, we propose hardware accelerators for a traditional AI algorithm based on random forest trees and two representative deep convolutional neural networks (AlexNet and VGG). With the proposed acceleration techniques, ~ 30x performance improvement was achieved compared to CPU for random forest trees. For deep CNNS, we demonstrate that much higher performance can be achieved with architecture space exploration using any optimization algorithms with system level performance and area models for hardware primitives as inputs and goal of minimizing latency with given resource constraints. With this method, ~30GOPs performance was achieved for Stratix V FPGA boards.
Hardware acceleration of DL algorithms alone is not always the most ecient way and sucient to achieve desired performance. There is a huge headroom available for performance improvement provided the algorithms are designed keeping in mind the hardware limitations and bottlenecks. This work achieves hardware-software co-optimization for Non-Maximal Suppression (NMS) algorithm. Using the proposed algorithmic changes and hardware architecture
With CMOS scaling coming to an end and increasing memory bandwidth bottlenecks, CMOS based system might not scale enough to accommodate requirements of more complicated and deeper neural networks in future. In this work, we explore RRAM crossbars and arrays as compact, high performing and energy efficient alternative to CMOS accelerators for deep learning training and inference. We propose and implement RRAM periphery read and write circuits and achieved ~3000x performance improvement in online dictionary learning compared to CPU.
This work also examines the realistic RRAM devices and their non-idealities. We do an in-depth study of the effects of RRAM non-idealities on inference accuracy when a pretrained model is mapped to RRAM based accelerators. To mitigate this issue, we propose Random Sparse Adaptation (RSA), a novel scheme aimed at tuning the model to take care of the faults of the RRAM array on which it is mapped. Our proposed method can achieve inference accuracy much higher than what traditional Read-Verify-Write (R-V-W) method could achieve. RSA can also recover lost inference accuracy 100x ~ 1000x faster compared to R-V-W. Using 32-bit high precision RSA cells, we achieved ~10% higher accuracy using fautly RRAM arrays compared to what can be achieved by mapping a deep network to an 32 level RRAM array with no variations.
Deep neural networks are composed of multiple layers that are compute/memory intensive. This makes it difficult to execute these algorithms real-time with low power consumption using existing general purpose computers. In this work, we propose hardware accelerators for a traditional AI algorithm based on random forest trees and two representative deep convolutional neural networks (AlexNet and VGG). With the proposed acceleration techniques, ~ 30x performance improvement was achieved compared to CPU for random forest trees. For deep CNNS, we demonstrate that much higher performance can be achieved with architecture space exploration using any optimization algorithms with system level performance and area models for hardware primitives as inputs and goal of minimizing latency with given resource constraints. With this method, ~30GOPs performance was achieved for Stratix V FPGA boards.
Hardware acceleration of DL algorithms alone is not always the most ecient way and sucient to achieve desired performance. There is a huge headroom available for performance improvement provided the algorithms are designed keeping in mind the hardware limitations and bottlenecks. This work achieves hardware-software co-optimization for Non-Maximal Suppression (NMS) algorithm. Using the proposed algorithmic changes and hardware architecture
With CMOS scaling coming to an end and increasing memory bandwidth bottlenecks, CMOS based system might not scale enough to accommodate requirements of more complicated and deeper neural networks in future. In this work, we explore RRAM crossbars and arrays as compact, high performing and energy efficient alternative to CMOS accelerators for deep learning training and inference. We propose and implement RRAM periphery read and write circuits and achieved ~3000x performance improvement in online dictionary learning compared to CPU.
This work also examines the realistic RRAM devices and their non-idealities. We do an in-depth study of the effects of RRAM non-idealities on inference accuracy when a pretrained model is mapped to RRAM based accelerators. To mitigate this issue, we propose Random Sparse Adaptation (RSA), a novel scheme aimed at tuning the model to take care of the faults of the RRAM array on which it is mapped. Our proposed method can achieve inference accuracy much higher than what traditional Read-Verify-Write (R-V-W) method could achieve. RSA can also recover lost inference accuracy 100x ~ 1000x faster compared to R-V-W. Using 32-bit high precision RSA cells, we achieved ~10% higher accuracy using fautly RRAM arrays compared to what can be achieved by mapping a deep network to an 32 level RRAM array with no variations.
ContributorsMohanty, Abinash (Author) / Cao, Yu (Thesis advisor) / Seo, Jae-Sun (Committee member) / Vrudhula, Sarma (Committee member) / Chakrabarti, Chaitali (Committee member) / Arizona State University (Publisher)
Created2018
Description
Vision is the ability to see and interpret any visual stimulus. It is one of the most fundamental and complex tasks the brain performs. Its complexity can be understood from the fact that close to 50% of the human brain is dedicated to vision. The brain receives an overwhelming amount of sensory information from the retina – estimated at up to 100 Mbps per optic nerve. Parallel processing of the entire visual field in real time is likely impossible for even the most sophisticated brains due to the high computational complexity of the task [1]. Yet, organisms can efficiently process this information to parse complex scenes in real time. This amazing feat of nature relies on selective attention which allows the brain to filter sensory information to select only a small subset of it for further processing.
Today, Computer Vision has become ubiquitous in our society with several in image understanding, medicine, drones, self-driving cars and many more. With the advent of GPUs and the availability of huge datasets like ImageNet, Convolutional Neural Networks (CNNs) have come to play a very important role in solving computer vision tasks, e.g object detection. However, the size of the networks become
prohibitive when higher accuracies are needed, which in turn demands more hardware. This hinders the application of CNNs to mobile platforms and stops them from hitting the real-time mark. The computational efficiency of a computer vision task, like object detection, can be enhanced by adopting a selective attention mechanism into the algorithm. In this work, this idea is explored by using Visual Proto Object Saliency algorithm [1] to crop out the areas of an image without relevant objects before a computationally intensive network like the Faster R-CNN [2] processes it.
Today, Computer Vision has become ubiquitous in our society with several in image understanding, medicine, drones, self-driving cars and many more. With the advent of GPUs and the availability of huge datasets like ImageNet, Convolutional Neural Networks (CNNs) have come to play a very important role in solving computer vision tasks, e.g object detection. However, the size of the networks become
prohibitive when higher accuracies are needed, which in turn demands more hardware. This hinders the application of CNNs to mobile platforms and stops them from hitting the real-time mark. The computational efficiency of a computer vision task, like object detection, can be enhanced by adopting a selective attention mechanism into the algorithm. In this work, this idea is explored by using Visual Proto Object Saliency algorithm [1] to crop out the areas of an image without relevant objects before a computationally intensive network like the Faster R-CNN [2] processes it.
ContributorsGorthy, Sai Rama Srivatsava (Author) / Cao, Yu (Thesis advisor) / Seo, Jae-Sun (Committee member) / Vrudhula, Sarma (Committee member) / Arizona State University (Publisher)
Created2017
Description
Machine learning technology has made a lot of incredible achievements in recent years. It has rivalled or exceeded human performance in many intellectual tasks including image recognition, face detection and the Go game. Many machine learning algorithms require huge amount of computation such as in multiplication of large matrices. As silicon technology has scaled to sub-14nm regime, simply scaling down the device cannot provide enough speed-up any more. New device technologies and system architectures are needed to improve the computing capacity. Designing specific hardware for machine learning is highly in demand. Efforts need to be made on a joint design and optimization of both hardware and algorithm.
For machine learning acceleration, traditional SRAM and DRAM based system suffer from low capacity, high latency, and high standby power. Instead, emerging memories, such as Phase Change Random Access Memory (PRAM), Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), and Resistive Random Access Memory (RRAM), are promising candidates providing low standby power, high data density, fast access and excellent scalability. This dissertation proposes a hierarchical memory modeling framework and models PRAM and STT-MRAM in four different levels of abstraction. With the proposed models, various simulations are conducted to investigate the performance, optimization, variability, reliability, and scalability.
Emerging memory devices such as RRAM can work as a 2-D crosspoint array to speed up the multiplication and accumulation in machine learning algorithms. This dissertation proposes a new parallel programming scheme to achieve in-memory learning with RRAM crosspoint array. The programming circuitry is designed and simulated in TSMC 65nm technology showing 900X speedup for the dictionary learning task compared to the CPU performance.
From the algorithm perspective, inspired by the high accuracy and low power of the brain, this dissertation proposes a bio-plausible feedforward inhibition spiking neural network with Spike-Rate-Dependent-Plasticity (SRDP) learning rule. It achieves more than 95% accuracy on the MNIST dataset, which is comparable to the sparse coding algorithm, but requires far fewer number of computations. The role of inhibition in this network is systematically studied and shown to improve the hardware efficiency in learning.
For machine learning acceleration, traditional SRAM and DRAM based system suffer from low capacity, high latency, and high standby power. Instead, emerging memories, such as Phase Change Random Access Memory (PRAM), Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), and Resistive Random Access Memory (RRAM), are promising candidates providing low standby power, high data density, fast access and excellent scalability. This dissertation proposes a hierarchical memory modeling framework and models PRAM and STT-MRAM in four different levels of abstraction. With the proposed models, various simulations are conducted to investigate the performance, optimization, variability, reliability, and scalability.
Emerging memory devices such as RRAM can work as a 2-D crosspoint array to speed up the multiplication and accumulation in machine learning algorithms. This dissertation proposes a new parallel programming scheme to achieve in-memory learning with RRAM crosspoint array. The programming circuitry is designed and simulated in TSMC 65nm technology showing 900X speedup for the dictionary learning task compared to the CPU performance.
From the algorithm perspective, inspired by the high accuracy and low power of the brain, this dissertation proposes a bio-plausible feedforward inhibition spiking neural network with Spike-Rate-Dependent-Plasticity (SRDP) learning rule. It achieves more than 95% accuracy on the MNIST dataset, which is comparable to the sparse coding algorithm, but requires far fewer number of computations. The role of inhibition in this network is systematically studied and shown to improve the hardware efficiency in learning.
ContributorsXu, Zihan (Author) / Cao, Yu (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Seo, Jae-Sun (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2017
Description
In recent years, Artificial Intelligence (AI) (e.g., Deep Neural Networks (DNNs), Transformer) has shown great success in real-world applications due to its superior performance in various cognitive tasks. The impressive performance achieved by AI models normally accompanies the cost of enormous model size and high computational complexity, which significantly hampers their implementation on resource-limited Cyber-Physical Systems (CPS), Internet-of-Things (IoT), or Edge systems due to their tightly constrained energy, computing, size, and memory budget. Thus, the urgent demand for enhancing the \textbf{Efficiency} of DNN has drawn significant research interests across various communities.
Motivated by the aforementioned concerns, this doctoral research has been mainly focusing on Enabling Deep Learning at Edge: From Efficient and Dynamic Inference to On-Device Learning. Specifically, from the inference perspective, this dissertation begins by investigating a hardware-friendly model compression method that effectively reduces the size of AI model while simultaneously achieving improved speed on edge devices. Additionally, due to the fact that diverse resource constraints of different edge devices, this dissertation further explores dynamic inference, which allows for real-time tuning of inference model size, computation, and latency to accommodate the limitations of each edge device. Regarding efficient on-device learning, this dissertation starts by analyzing memory usage during transfer learning training. Based on this analysis, a novel framework called "Reprogramming Network'' (Rep-Net) is introduced that offers a fresh perspective on the on-device transfer learning problem. The Rep-Net enables on-device transferlearning by directly learning to reprogram the intermediate features of a pre-trained model. Lastly, this dissertation studies an efficient continual learning algorithm that facilitates learning multiple tasks without the risk of forgetting previously acquired knowledge. In practice, through the exploration of task correlation, an interesting phenomenon is observed that the intermediate features are highly correlated between tasks with the self-supervised pre-trained model. Building upon this observation, a novel approach called progressive task-correlated layer freezing is proposed to gradually freeze a subset of layers with the highest correlation ratios for each task leading to training efficiency.
ContributorsYang, Li (Author) / Fan, Deliang (Thesis advisor) / Seo, Jae-Sun (Committee member) / Zhang, Junshan (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2023
Description
Resistive random-access memory (RRAM) or memristor, is an emerging technology used in neuromorphic computing to exceed the traditional von Neumann obstacle by merging the processing and memory units. Two-dimensional (2D) materials with non-volatile switching behavior can be used as the switching layer of RRAMs, exhibiting superior behavior compared to conventional oxide-based RRAMs. The use of 2D materials allows scaling the resistive switching layer thickness to sub-nanometer dimensions enabling devices to operate with low switching voltages and high programming speeds, offering large improvements in efficiency and performance as well as ultra-dense integration. This dissertation presents an extensive study of linear and logistic regression algorithms implemented with 1-transistor-1-resistor (1T1R) memristor crossbars arrays. For this task, a simulation platform is used that wraps circuit-level simulations of 1T1R crossbars and physics-based model of RRAM to elucidate the impact of device variability on algorithm accuracy, convergence rate, and precision. Moreover, a smart pulsing strategy is proposed for the practical implementation of synaptic weight updates that can accelerate training in real crossbar architectures.
Next, this dissertation reports on the hardware implementation of analog dot-product operation on arrays of 2D hexagonal boron nitride (h-BN) memristors. This extends beyond previous work that studied isolated device characteristics towards the application of analog neural network accelerators based on 2D memristor arrays. The wafer-level fabrication of the memristor arrays is enabled by large-area transfer of CVD-grown few-layer h-BN films. The dot-product operation shows excellent linearity and repeatability, with low read energy consumption, with minimal error and deviation over various measurement cycles. Moreover, the successful implementation of a stochastic linear and logistic regression algorithm in 2D h-BN memristor hardware is presented for the classification of noisy images. Additionally, the electrical performance of novel 2D h-BN memristor for SNN applications is extensively investigated. Then, using the experimental behavior of the h-BN memristor as the artificial synapse, an unsupervised spiking neural network (SNN) is simulated for the image classification task. A novel and simple Spike-Timing-Dependent-Plasticity (STDP)-based dropout technique is presented to enhance the recognition task of the h-BN memristor-based SNN.
ContributorsAfshari, Sahra (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Barnaby, Hugh J (Committee member) / Seo, Jae-Sun (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2023
Description
Adversarial threats of deep learning are increasingly becoming a concern due to the ubiquitous deployment of deep neural networks(DNNs) in many security-sensitive domains. Among the existing threats, adversarial weight perturbation is an emerging class of threats that attempts to perturb the weight parameters of DNNs to breach security and privacy.In this thesis, the first weight perturbation attack introduced is called Bit-Flip Attack (BFA), which can maliciously flip a small number of bits within a computer’s main memory system storing the DNN weight parameter to achieve malicious objectives. Our developed algorithm can achieve three specific attack objectives: I) Un-targeted accuracy degradation attack, ii) Targeted attack, & iii) Trojan attack. Moreover, BFA utilizes the rowhammer technique to demonstrate the bit-flip attack in an actual computer prototype. While the bit-flip attack is conducted in a white-box setting, the subsequent contribution of this thesis is to develop another novel weight perturbation attack in a black-box setting. Consequently, this thesis discusses a new study of DNN model vulnerabilities in a multi-tenant Field Programmable Gate Array (FPGA) cloud under a strict black-box framework. This newly developed attack framework injects faults in the malicious tenant by duplicating specific DNN weight packages during data transmission between off-chip memory and on-chip buffer of a victim FPGA. The proposed attack is also experimentally validated in a multi-tenant cloud FPGA prototype. In the final part, the focus shifts toward deep learning model privacy, popularly known as model extraction, that can steal partial DNN weight parameters remotely with the aid of a memory side-channel attack. In addition, a novel training algorithm is designed to utilize the partially leaked DNN weight bit information, making the model extraction attack more effective. The algorithm effectively leverages the partial leaked bit information and generates a substitute prototype of the victim model with almost identical performance to the victim.
ContributorsRakin, Adnan Siraj (Author) / Fan, Deliang (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Seo, Jae-Sun (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2022