ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Barnaby, Hugh
Description
Static CMOS logic has remained the dominant design style of digital systems for
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
ContributorsYang, Jinghua (Author) / Vrudhula, Sarma (Thesis advisor) / Barnaby, Hugh (Committee member) / Cao, Yu (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018
Description
The aging mechanism in devices is prone to uncertainties due to dynamic stress conditions. In AMS circuits these can lead to momentary fluctuations in circuit voltage that may be missed by a compact model and hence cause unpredictable failure. Firstly, multiple aging effects in the devices may have underlying correlations. The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. Secondly, the prevalent reliability analysis lacks a direct validation of the lifetime of devices and circuits. The aging mechanism of BTI causes gradual degradation of the device leading to threshold voltage shift and increasing the failure rate. In the 28nm HKMG technology, contribution of BTI to NMOS degradation has become significant at high temperature as compared to Channel Hot Carrier (CHC). This requires revising the End of Lifetime (EOL) calculation based on contribution from induvial aging effects especially in feedback loops. Conventionally, aging in devices is extrapolated from a short-term measurement, but this practice results in unreliable prediction of EOL caused by variability in initial parameters and stress conditions. To mitigate the extrapolation issues and improve predictability, this work aims at providing a new approach to test the device to EOL in a fast and controllable manner. The contributions of this thesis include: (1) based on stochastic trapping/de-trapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. Moreover, these models are implemented into circuit simulation, illustrating a significant increase in failure rate due to accelerated BTI, (2) developing a model to predict accelerated aging under special conditions like feedback loops and stacked inverters, (3) introducing a feedback loop based test methodology called Adaptive Accelerated Aging (AAA) that can generate accurate aging data till EOL, (4) presenting simulation and experimental data for the models and providing test setup for multiple stress conditions, including those for achieving EOL in 1 hour device as well as ring oscillator (RO) circuit for validation of the proposed methodology, and (5) scaling these models for finding a guard band for VLSI design circuits that can provide realistic aging impact.
ContributorsPatra, Devyani (Author) / Cao, Yu (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2017
Description
Semiconductor memory is a key component of the computing systems. Beyond the conventional memory and data storage applications, in this dissertation, both mainstream and eNVM memory technologies are explored for radiation environment, hardware security system and machine learning applications.
In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level.
Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well.
Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm.
Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.
In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level.
Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well.
Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm.
Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.
ContributorsLiu, Rui (Author) / Yu, Shimeng (Thesis advisor, Committee member) / Cao, Yu (Committee member) / Barnaby, Hugh (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018