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Description
With the push for integration, a slew of modern switching power management circuits are operating at higher switching frequencies in order to reduce passive filter sizes. But while these switching regulators provide power conversion at high efficiencies, their output is prone to ripples due to the inherent switching behavior. These

With the push for integration, a slew of modern switching power management circuits are operating at higher switching frequencies in order to reduce passive filter sizes. But while these switching regulators provide power conversion at high efficiencies, their output is prone to ripples due to the inherent switching behavior. These switching regulators use linear-low dropout regulators (LDOs) downstream to provide clean supplies. Typically, these LDOs have good power supply rejection (PSR) at lower frequencies but this degrades at higher frequencies. Therefore, some residual ripple is still manifested on the output. Because of this, high power supply rejection (PSR) with a wide rejection frequency band is becoming a critical requirement in linear low-dropout regulators (LDOs) used in complex systems- on-chip (SOCs).

Typical LDOs achieve higher PSR within their loop-bandwidth; however, their supply rejection performance degrades with reduced loop-gain outside their loop- bandwidth. The LDOs with external filtering capacitors may also have spectral peaking in their PSR response, causing excess system- level supply noise. This work presents an LDO design approach, which achieves a PSR of higher than 68 dB up to 2 MHz frequency and over a wide range of loads up to 250 mA. The wide PSR bandwidth is achieved using a current-mode feedforward ripple canceller (CFFRC) amplifier which provides up to 25 dB of PSR improvement. The feedforward path gain is inherently matched to the forward gain of the LDO, not requiring calibration. The LDO has a fast load transient response with a recovery time of 6.1μs and has a quiescent current of 5.6μA. For a full load transition, the LDO achieves settling with overshoot and undershoot voltages below 27.6 mV and 36.36 mV, respectively. The LDO is designed and fabricated in a 180 nm bipolar/CMOS/DMOS (BCD) technology. The CFFRC amplifier helps to achieve low quiescent power due to its inherent current mode nature, eliminating the need for supply ripple summing amplifiers and adaptive biasing.
ContributorsJoshi, Kishan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Seo, Jae-Sun (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2020