ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Filtering by
- All Subjects: Integrated circuits
- Creators: Bakkaloglu, Bertan
In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
The presented research introduces two fully integrated LDO voltage regulators for SoC applications. N-type Metal-Oxide-Semiconductor (NMOS) power transistor based operation achieves high bandwidth owing to the source follower configuration of the regulation loop. A low input impedance and high output impedance error amplifier ensures wide regulation loop bandwidth and high gain. Current-reused dynamic biasing technique has been employed to increase slew-rate at the gate of power transistor during full-load variations, by a factor of two. Three design variations for a 1-1.8 V, 50 mA NMOS LDO voltage regulator have been implemented in a 180 nm Mixed-mode/RF process. The whole LDO core consumes 0.130 mA of nominal quiescent ground current at 50 mA load and occupies 0.21 mm x mm. LDO has a dropout voltage of 200 mV and is able to recover in 30 ns from a 65 mV of undershoot for 0-50 pF of on-chip load capacitance.
low for any electronic circuit to operate. To get rid of this problem, traditionally multiple
solar cells are connected in series to get higher voltage. The disadvantage of this approach
is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can
result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)
at single solar cell level is the most efficient way to extract power from solar cell.
Power Management IC (MPIC) used to extract power from single solar cell, needs to
start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area
overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an
auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.
The auxiliary supply powers up a MPPT converter followed by a regulated converter. At
the start up both the converters operate at 100 kHz clock with 80% duty cycle and system
output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up
circuit is turned off and the supply voltage for both the converters is derived from the system
output itself. In steady-state condition the system output is regulated to 3.0 V.
A fully integrated analog MPPT technique is proposed to extract maximum power from
the solar cell. This technique does not require Analog to Digital Converter (ADC) and
Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed
MPPT techniques includes a switch capacitor based power sensor which senses current of
boost converter without using any sense resistor. A complete system is designed which
starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.