ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Sen, Arunabha
- Creators: Vasileska, Dragica
- Creators: Chassin, Laurie
Description
One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
With the introduction of compressed sensing and sparse representation,many image processing and computer vision problems have been looked at in a new way. Recent trends indicate that many challenging computer vision and image processing problems are being solved using compressive sensing and sparse representation algorithms. This thesis assays some applications of compressive sensing and sparse representation with regards to image enhancement, restoration and classication. The first application deals with image Super-Resolution through compressive sensing based sparse representation. A novel framework is developed for understanding and analyzing some of the implications of compressive sensing in reconstruction and recovery of an image through raw-sampled and trained dictionaries. Properties of the projection operator and the dictionary are examined and the corresponding results presented. In the second application a novel technique for representing image classes uniquely in a high-dimensional space for image classification is presented. In this method, design and implementation strategy of the image classification system through unique affine sparse codes is presented, which leads to state of the art results. This further leads to analysis of some of the properties attributed to these unique sparse codes. In addition to obtaining these codes, a strong classier is designed and implemented to boost the results obtained. Evaluation with publicly available datasets shows that the proposed method outperforms other state of the art results in image classication. The final part of the thesis deals with image denoising with a novel approach towards obtaining high quality denoised image patches using only a single image. A new technique is proposed to obtain highly correlated image patches through sparse representation, which are then subjected to matrix completion to obtain high quality image patches. Experiments suggest that there may exist a structure within a noisy image which can be exploited for denoising through a low-rank constraint.
ContributorsKulkarni, Naveen (Author) / Li, Baoxin (Thesis advisor) / Ye, Jieping (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2011
Description
A good production schedule in a semiconductor back-end facility is critical for the on time delivery of customer orders. Compared to the front-end process that is dominated by re-entrant product flows, the back-end process is linear and therefore more suitable for scheduling. However, the production scheduling of the back-end process is still very difficult due to the wide product mix, large number of parallel machines, product family related setups, machine-product qualification, and weekly demand consisting of thousands of lots. In this research, a novel mixed-integer-linear-programming (MILP) model is proposed for the batch production scheduling of a semiconductor back-end facility. In the MILP formulation, the manufacturing process is modeled as a flexible flow line with bottleneck stages, unrelated parallel machines, product family related sequence-independent setups, and product-machine qualification considerations. However, this MILP formulation is difficult to solve for real size problem instances. In a semiconductor back-end facility, production scheduling usually needs to be done every day while considering updated demand forecast for a medium term planning horizon. Due to the limitation on the solvable size of the MILP model, a deterministic scheduling system (DSS), consisting of an optimizer and a scheduler, is proposed to provide sub-optimal solutions in a short time for real size problem instances. The optimizer generates a tentative production plan. Then the scheduler sequences each lot on each individual machine according to the tentative production plan and scheduling rules. Customized factory rules and additional resource constraints are included in the DSS, such as preventive maintenance schedule, setup crew availability, and carrier limitations. Small problem instances are randomly generated to compare the performances of the MILP model and the deterministic scheduling system. Then experimental design is applied to understand the behavior of the DSS and identify the best configuration of the DSS under different demand scenarios. Product-machine qualification decisions have long-term and significant impact on production scheduling. A robust product-machine qualification matrix is critical for meeting demand when demand quantity or mix varies. In the second part of this research, a stochastic mixed integer programming model is proposed to balance the tradeoff between current machine qualification costs and future backorder costs with uncertain demand. The L-shaped method and acceleration techniques are proposed to solve the stochastic model. Computational results are provided to compare the performance of different solution methods.
ContributorsFu, Mengying (Author) / Askin, Ronald G. (Thesis advisor) / Zhang, Muhong (Thesis advisor) / Fowler, John W (Committee member) / Pan, Rong (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2011
Description
Demands in file size and transfer rates for consumer-orientated products have escalated in recent times. This is primarily due to the emergence of high definition video content. Now factor in the consumer desire for convenience, and we find that wireless service is the most desired approach for inter-connectivity. Consumers expect wireless service to emulate wired service with little to virtually no difference in quality of service (QoS). The background section of this document examines the QoS requirements for wireless connectivity of high definition video applications. I then proceed to look at proposed solutions at the physical (PHY) and the media access control (MAC) layers as well as cross-layer schemes. These schemes are subsequently are evaluated in terms of usefulness in a multi-gigabit, 60 GHz wireless multimedia system targeting the average consumer. It is determined that a substantial gap in published literature exists pertinent to this application. Specifically, little or no work has been found that shows how an adaptive PHYMAC cross-layer solution that provides real-time compensation for varying channel conditions might be actually implemented. Further, no work has been found that shows results of such a model. This research proposes, develops and implements in Matlab code an alternate cross-layer solution that will provide acceptable QoS service for multimedia applications. Simulations using actual high definition video sequences are used to test the proposed solution. Results based on the average PSNR metric show that a quasi-adaptive algorithm provides greater than 7 dB of improvement over a non-adaptive approach while a fully-adaptive alogrithm provides over18 dB of improvement. The fully adaptive implementation has been conclusively shown to be superior to non-adaptive techniques and sufficiently superior to even quasi-adaptive algorithms.
ContributorsBosco, Bruce (Author) / Reisslein, Martin (Thesis advisor) / Tepedelenlioğlu, Cihan (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
Query Expansion is a functionality of search engines that suggest a set of related queries for a user issued keyword query. In case of exploratory or ambiguous keyword queries, the main goal of the user would be to identify and select a specific category of query results among different categorical options, in order to narrow down the search and reach the desired result. Typical corpus-driven keyword query expansion approaches return popular words in the results as expanded queries. These empirical methods fail to cover all semantics of categories present in the query results. More importantly these methods do not consider the semantic relationship between the keywords featured in an expanded query. Contrary to a normal keyword search setting, these factors are non-trivial in an exploratory and ambiguous query setting where the user's precise discernment of different categories present in the query results is more important for making subsequent search decisions. In this thesis, I propose a new framework for keyword query expansion: generating a set of queries that correspond to the categorization of original query results, which is referred as Categorizing query expansion. Two approaches of algorithms are proposed, one that performs clustering as pre-processing step and then generates categorizing expanded queries based on the clusters. The other category of algorithms handle the case of generating quality expanded queries in the presence of imperfect clusters.
ContributorsNatarajan, Sivaramakrishnan (Author) / Chen, Yi (Thesis advisor) / Candan, Selcuk (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2011
Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
A statement appearing in social media provides a very significant challenge for determining the provenance of the statement. Provenance describes the origin, custody, and ownership of something. Most statements appearing in social media are not published with corresponding provenance data. However, the same characteristics that make the social media environment challenging, including the massive amounts of data available, large numbers of users, and a highly dynamic environment, provide unique and untapped opportunities for solving the provenance problem for social media. Current approaches for tracking provenance data do not scale for online social media and consequently there is a gap in provenance methodologies and technologies providing exciting research opportunities. The guiding vision is the use of social media information itself to realize a useful amount of provenance data for information in social media. This departs from traditional approaches for data provenance which rely on a central store of provenance information. The contemporary online social media environment is an enormous and constantly updated "central store" that can be mined for provenance information that is not readily made available to the average social media user. This research introduces an approach and builds a foundation aimed at realizing a provenance data capability for social media users that is not accessible today.
ContributorsBarbier, Geoffrey P (Author) / Liu, Huan (Thesis advisor) / Bell, Herbert (Committee member) / Li, Baoxin (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011