ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Shen, Wei
- Creators: Dai, Lenore
- Creators: Barnaby, Hugh
Description
ABSTRACT Developing new non-traditional device models is gaining popularity as the silicon-based electrical device approaches its limitation when it scales down. Membrane systems, also called P systems, are a new class of biological computation model inspired by the way cells process chemical signals. Spiking Neural P systems (SNP systems), a certain kind of membrane systems, is inspired by the way the neurons in brain interact using electrical spikes. Compared to the traditional Boolean logic, SNP systems not only perform similar functions but also provide a more promising solution for reliable computation. Two basic neuron types, Low Pass (LP) neurons and High Pass (HP) neurons, are introduced. These two basic types of neurons are capable to build an arbitrary SNP neuron. This leads to the conclusion that these two basic neuron types are Turing complete since SNP systems has been proved Turing complete. These two basic types of neurons are further used as the elements to construct general-purpose arithmetic circuits, such as adder, subtractor and comparator. In this thesis, erroneous behaviors of neurons are discussed. Transmission error (spike loss) is proved to be equivalent to threshold error, which makes threshold error discussion more universal. To improve the reliability, a new structure called motif is proposed. Compared to Triple Modular Redundancy improvement, motif design presents its efficiency and effectiveness in both single neuron and arithmetic circuit analysis. DRAM-based CMOS circuits are used to implement the two basic types of neurons. Functionality of basic type neurons is proved using the SPICE simulations. The motif improved adder and the comparator, as compared to conventional Boolean logic design, are much more reliable with lower leakage, and smaller silicon area. This leads to the conclusion that SNP system could provide a more promising solution for reliable computation than the conventional Boolean logic.
ContributorsAn, Pei (Author) / Cao, Yu (Thesis advisor) / Barnaby, Hugh (Committee member) / Chakrabarti, Chaitali (Committee member) / Arizona State University (Publisher)
Created2013
Description
Cancer is the second leading cause of death in the United States and novel methods of treating advanced malignancies are of high importance. Of these deaths, prostate cancer and breast cancer are the second most fatal carcinomas in men and women respectively, while pancreatic cancer is the fourth most fatal in both men and women. Developing new drugs for the treatment of cancer is both a slow and expensive process. It is estimated that it takes an average of 15 years and an expense of $800 million to bring a single new drug to the market. However, it is also estimated that nearly 40% of that cost could be avoided by finding alternative uses for drugs that have already been approved by the Food and Drug Administration (FDA). The research presented in this document describes the testing, identification, and mechanistic evaluation of novel methods for treating many human carcinomas using drugs previously approved by the FDA. A tissue culture plate-based screening of FDA approved drugs will identify compounds that can be used in combination with the protein TRAIL to induce apoptosis selectively in cancer cells. Identified leads will next be optimized using high-throughput microfluidic devices to determine the most effective treatment conditions. Finally, a rigorous mechanistic analysis will be conducted to understand how the FDA-approved drug mitoxantrone, sensitizes cancer cells to TRAIL-mediated apoptosis.
ContributorsTaylor, David (Author) / Rege, Kaushal (Thesis advisor) / Jayaraman, Arul (Committee member) / Nielsen, David (Committee member) / Kodibagkar, Vikram (Committee member) / Dai, Lenore (Committee member) / Arizona State University (Publisher)
Created2013
Description
A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The circuit approach is validated for hardness using both heavy ion and proton broad beam testing. For synthesis and auto place and route, the methodology and circuits leverage commercial logic design automation tools. These tools are glued together with custom CAD tools designed to enable easy conversion of standard single redundant hardware description language (HDL) files into hardened TMR circuitry. The flow allows hardening of any synthesizable logic at clock frequencies comparable to unhardened designs and supports standard low-power techniques, e.g. clock gating and supply voltage scaling.
ContributorsHindman, Nathan (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
Description
The dissolution of metal layers such as silver into chalcogenide glass layers such as germanium selenide changes the resistivity of the metal and chalcogenide films by a great extent. It is known that the incorporation of the metal can be achieved by ultra violet light exposure or thermal processes. In this work, the use of metal dissolution by exposure to gamma radiation has been explored for radiation sensor applications. Test structures were designed and a process flow was developed for prototype sensor fabrication. The test structures were designed such that sensitivity to radiation could be studied. The focus is on the effect of gamma rays as well as ultra violet light on silver dissolution in germanium selenide (Ge30Se70) chalcogenide glass. Ultra violet radiation testing was used prior to gamma exposure to assess the basic mechanism. The test structures were electrically characterized prior to and post irradiation to assess resistance change due to metal dissolution. A change in resistance was observed post irradiation and was found to be dependent on the radiation dose. The structures were also characterized using atomic force microscopy and roughness measurements were made prior to and post irradiation. A change in roughness of the silver films on Ge30Se70 was observed following exposure. This indicated the loss of continuity of the film which causes the increase in silver film resistance following irradiation. Recovery of initial resistance in the structures was also observed after the radiation stress was removed. This recovery was explained with photo-stimulated deposition of silver from the chalcogenide at room temperature confirmed with the re-appearance of silver dendrites on the chalcogenide surface. The results demonstrate that it is possible to use the metal dissolution effect in radiation sensing applications.
ContributorsChandran, Ankitha (Author) / Kozicki, Michael N (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric DG-FinFET, and SGFET are developed. Despite the complex device structure and boundary conditions for the Poisson-Boltzmann equation, the core structure of the DG-FinFET and SGFET models, are maintained similar to the surface potential based compact models for planar MOSFETs such as SP and PSP. TCAD simulations show differences between the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input voltage equation valid in all regions of operation is proposed for common-gate symmetric DG-FinFETs with intrinsic or lightly doped bodies. A closed-form algorithm is developed for solving the new input voltage equation including ambipolar effects. The algorithm is verified for both the surface potential and its derivatives and includes a previously published analytical approximation for surface potential as a special case when ambipolar effects can be neglected. The symmetric linearization method for common-gate symmetric DG-FinFETs is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFETs. The accuracy of the proposed technique is verified by comparison with exact results. An alternative and computationally efficient description of the boundary between the trigonometric and hyperbolic solutions of the Poisson-Boltzmann equation for the independent-gate asymmetric DG-FinFET is developed in terms of the Lambert W function. Efficient numerical algorithm is proposed for solving the input voltage equation. Analytical expressions for terminal charges of an independent-gate asymmetric DG-FinFET are derived. The new charge model is C-infinity continuous, valid for weak as well as for strong inversion condition of both the channels and does not involve the charge-sheet approximation. This is accomplished by developing the symmetric linearization method in a form that does not require identical boundary conditions at the two Si-SiO2 interfaces and allows for volume inversion in the DG-FinFET. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The model is implemented in a standard circuit simulator through Verilog-A code. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric DG-FinFETs.
ContributorsDessai, Gajanan (Author) / Gildenblat, Gennady (Committee member) / McAndrew, Colin (Committee member) / Cao, Yu (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Although high performance, light-weight composites are increasingly being used in applications ranging from aircraft, rotorcraft, weapon systems and ground vehicles, the assurance of structural reliability remains a critical issue. In composites, damage is absorbed through various fracture processes, including fiber failure, matrix cracking and delamination. An important element in achieving reliable composite systems is a strong capability of assessing and inspecting physical damage of critical structural components. Installation of a robust Structural Health Monitoring (SHM) system would be very valuable in detecting the onset of composite failure. A number of major issues still require serious attention in connection with the research and development aspects of sensor-integrated reliable SHM systems for composite structures. In particular, the sensitivity of currently available sensor systems does not allow detection of micro level damage; this limits the capability of data driven SHM systems. As a fundamental layer in SHM, modeling can provide in-depth information on material and structural behavior for sensing and detection, as well as data for learning algorithms. This dissertation focusses on the development of a multiscale analysis framework, which is used to detect various forms of damage in complex composite structures. A generalized method of cells based micromechanics analysis, as implemented in NASA's MAC/GMC code, is used for the micro-level analysis. First, a baseline study of MAC/GMC is performed to determine the governing failure theories that best capture the damage progression. The deficiencies associated with various layups and loading conditions are addressed. In most micromechanics analysis, a representative unit cell (RUC) with a common fiber packing arrangement is used. The effect of variation in this arrangement within the RUC has been studied and results indicate this variation influences the macro-scale effective material properties and failure stresses. The developed model has been used to simulate impact damage in a composite beam and an airfoil structure. The model data was verified through active interrogation using piezoelectric sensors. The multiscale model was further extended to develop a coupled damage and wave attenuation model, which was used to study different damage states such as fiber-matrix debonding in composite structures with surface bonded piezoelectric sensors.
ContributorsMoncada, Albert (Author) / Chattopadhyay, Aditi (Thesis advisor) / Dai, Lenore (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Rajadas, John (Committee member) / Yekani Fard, Masoud (Committee member) / Arizona State University (Publisher)
Created2012
Description
The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, bit error rate, and immunity to interferers. In this study exploration of receiver architectures and convergence upon a comprehensive solution is done. This analysis is used to design and build a system for validation. The Direct Conversion Receiver architecture implemented for the MICS standard in 0.18 µm CMOS process consumes approximately 2 mW is competitive with published research.
ContributorsStevens, Mark (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
The advent of threshold logic simplifies the traditional Boolean logic to the single level multi-input function. Threshold logic latch (TLL), among implementations of threshold logic, is functionally equivalent to a multi-input function with an edge triggered flip-flop, which stands out to improve area and both dynamic and leakage power consumption, providing an appropriate design alternative. Accordingly, the TLL standard cell library is designed. Through technology mapping, hybrid circuit is generated by absorbing the logic cone backward from each flip-flip to get the smallest remaining feeder. With the scan test methodology adopted, design for testability (DFT) is proposed, including scan element design and scan chain insertion. Test synthesis flow is then introduced, according to the Cadence tool, RTL compiler. Test application is the process of applying vectors and the response analysis, which is mainly about the testbench design. A parameterized generic self-checking Verilog testbench is designed for static fault detection. Test development refers to the fault modeling, and test generation. Firstly, functional truth table test generation on TLL cells is proposed. Before the truth table test of the threshold function, the dependence of sequence of vectors applied, i.e., the dependence of current state on the previous state, should be eliminated. Transition test (dynamic pattern) on all weak inputs is proved to be able to test the reset function, which is supposed to erase the history in the reset phase before every evaluation phase. Remaining vectors in the truth table except the weak inputs are then applied statically (static pattern). Secondly, dynamic patterns for all weak inputs are proposed to detect structural transistor level faults analyzed in the TLL cell, with single fault assumption and stuck-at faults, stuck-on faults, and stuck-open faults under consideration. Containing those patterns, the functional test covers all testable structural faults inside the TLL. Thirdly, with the scope of the whole hybrid netlist, the procedure of test generation is proposed with three steps: scan chain test; test of feeders and other scan elements except TLLs; functional pattern test of TLL cells. Implementation of this procedure is discussed in the automatic test pattern generation (ATPG) chapter.
ContributorsHu, Yang (Author) / Vrudhula, Sarma (Thesis advisor) / Barnaby, Hugh (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2013
Description
New technologies enable the exploration of space, high-fidelity defense systems, lighting fast intercontinental communication systems as well as medical technologies that extend and improve patient lives. The basis for these technologies is high reliability electronics devised to meet stringent design goals and to operate consistently for many years deployed in the field. An on-going concern for engineers is the consequences of ionizing radiation exposure, specifically total dose effects. For many of the different applications, there is a likelihood of exposure to radiation, which can result in device degradation and potentially failure. While the total dose effects and the resulting degradation are a well-studied field and methodologies to help mitigate degradation have been developed, there is still a need for simulation techniques to help designers understand total dose effects within their design. To that end, the work presented here details simulation techniques to analyze as well as predict the total dose response of a circuit. In this dissertation the total dose effects are broken into two sub-categories, intra-device and inter-device effects in CMOS technology. Intra-device effects degrade the performance of both n-channel and p-channel transistors, while inter-device effects result in loss of device isolation. In this work, multiple case studies are presented for which total dose degradation is of concern. Through the simulation techniques, the individual device and circuit responses are modeled post-irradiation. The use of these simulation techniques by circuit designers allow predictive simulation of total dose effects, allowing focused design changes to be implemented to increase radiation tolerance of high reliability electronics.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis presents approaches to develop micro seismometers and accelerometers based on molecular electronic transducers (MET) technology using MicroElectroMechanical Systems (MEMS) techniques. MET is a technology applied in seismic instrumentation that proves highly beneficial to planetary seismology. It consists of an electrochemical cell that senses the movement of liquid electrolyte between electrodes by converting it to the output current. MET seismometers have advantages of high sensitivity, low noise floor, small size, absence of fragile mechanical moving parts and independence on the direction of sensitivity axis. By using MEMS techniques, a micro MET seismometer is developed with inter-electrode spacing close to 1μm, which improves the sensitivity of fabricated device to above 3000 V/(m/s^2) under operating bias of 600 mV and input acceleration of 400 μG (G=9.81m/s^2) at 0.32 Hz. The lowered hydrodynamic resistance by increasing the number of channels improves the self-noise to -127 dB equivalent to 44 nG/√Hz at 1 Hz. An alternative approach to build the sensing element of MEMS MET seismometer using SOI process is also presented in this thesis. The significantly increased number of channels is expected to improve the noise performance. Inspired by the advantages of combining MET and MEMS technologies on the development of seismometer, a low frequency accelerometer utilizing MET technology with post-CMOS-compatible fabrication processes is developed. In the fabricated accelerometer, the complicated fabrication of mass-spring system in solid-state MEMS accelerometer is replaced with a much simpler post-CMOS-compatible process containing only deposition of a four-electrode MET structure on a planar substrate, and a liquid inertia mass of an electrolyte droplet encapsulated by oil film. The fabrication process does not involve focused ion beam milling which is used in the micro MET seismometer fabrication, thus the cost is lowered. Furthermore, the planar structure and the novel idea of using an oil film as the sealing diaphragm eliminate the complicated three-dimensional packaging of the seismometer. The fabricated device achieves 10.8 V/G sensitivity at 20 Hz with nearly flat response over the frequency range from 1 Hz to 50 Hz, and a low noise floor of 75 μG/√Hz at 20 Hz.
ContributorsHuang, Hai (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Dai, Lenore (Committee member) / Si, Jennie (Committee member) / Arizona State University (Publisher)
Created2014