ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Zhao, Yuji
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
In this work, we present the study of ZnTe nanowires (NWs) that are synthesized
through a simple vapor-liquid-solid (VLS) method. By controlling the presence or
the absence of Au catalysts and controlling the growth parameters such as growth
temperature, various growth morphologies of ZnTe, such as thin films and nanowires
can be obtained. The characterization of the ZnTe nanostructures and films was
performed using scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy
(EDX), high- resolution transmission electron microscope (HRTEM), X-ray
diffraction (XRD), photoluminescence (PL), Raman spectroscopy and light scattering
measurement. After confirming the crystal purity of ZnTe, two-terminal diodes and
three-terminal transistors were fabricated with both nanowire and planar nano-sheet
configurations, in order to correlate the nanostructure geometry to device performance
including field effect mobility, Schottky barrier characteristics, and turn-on
characteristics. Additionally, optoelectronic properties such as photoconductive gain
and responsivity were compared against morphology. Finally, ZnTe was explored in
conjunction with ZnO in order to form type-II band alignment in a core-shell nanostructure.
Various characterization techniques including scanning electron microscopy,
energy-dispersive X-ray spectroscopy , x-ray diffraction, Raman spectroscopy, UV-vis
reflectance spectra and photoluminescence were used to investigate the modification
of ZnO/ZnTe core/shell structure properties. In PL spectra, the eliminated PL intensity
of ZnO wires is primarily attributed to the efficient charge transfer process
occurring between ZnO and ZnTe, due to the band alignment in the core/shell structure. Moreover, the result of UV-vis reflectance spectra corresponds to the band
gap energy of ZnO and ZnTe, respectively, which confirm that the sample consists of
ZnO/ZnTe core/shell structure of good quality.
Highest efficiency single-junction silicon and bottom silicon sub-cell in silicon based tandems employ monocrystalline silicon wafer textured with random pyramids. Therefore, the light trapping performance of random pyramids in silicon solar cells is established. An accurate three-dimensional height map of random pyramids is captured and ray-traced to record the angular distribution of light inside the wafer which shows random pyramids trap light as well as Lambertian scatterer.
Second, the problem of front-surface reflectance common to all modules, planar solar cells and to silicon and perovskite based tandems is dealt. A nano-imprint lithography procedure is developed to fabricate polydimethylsiloxane (PDMS) scattering layer carrying random pyramids that effectively reduces the reflectance. Results show it increased the efficiency of planar semi-transparent perovskite solar cell by 10.6% relative.
Next a detailed assessment of light-management in practical two-terminal perovskite/silicon and perovskite/perovskite tandems is performed to quantify reflectance, parasitic and light-trapping losses. For this first a methodology based on spectroscopic ellipsometry is developed to characterize new absorber materials employed in tandems. Characterized materials include wide-bandgap (CH3NH3I3, CsyFA1-yPb(BrxI1-x)3) and low-bandgap (Cs0.05FA0.5MA0.45(Pb0.5Sn0.5)I3) perovskites and wide-bandgap CdTe alloys (CdZnSeTe). Using this information rigorous optical modeling of two-terminal perovskite/silicon and perovskite/perovskite tandems with varying light management schemes is performed. Thus providing a guideline for further development.