ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- Creators: Tao, Meng
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
Development of New Front Side Metallization Method of Aluminum Electroplating for Silicon Solar Cell
The objective of the research in this thesis is to develop low-cost spray pyrolysis technique to synthesize oxides thin films for applications in solar cells. Chapter 4 and 5 discuss spray-deposited dielectric oxides for their applications in Si solar cells. In Chapter 4, a successful deposition of Al2O3 is demonstrated using water as the solvent which ensures a lower cost and safer process environment. Optical, electrical, and structural properties of spray-deposited Al2O3 are investigated and compared to the industrial standard Atomic Layer Deposition (ALD) Al2O3/Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx stack, to reveal the suitability of spray-deposited Al2O3 for rear passivation and optical trapping in p-type Si Passivated Emitter and Rear Cell (PERC) solar cells. In Chapter 5, The possibility of using low-cost spray-deposited ZrO2 as the antireflection coating for Si solar cells is investigated. Optical, electrical and structural properties of spray-deposited ZrO2 films are studied and compared to the industrial standard antireflection coating PECVD SiNx. In Chapter 6, spray-deposited hematite Fe2O3 and sol-gel prepared anatase TiO2 thin films are sulfurized by annealing in H2S to investigate the band gap narrowing by sulfur doping and explore the possibility of using ternary semiconductors for their application as solar absorbers.
crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out
of all commercial solar cells. Although the potential of crystalline-Si solar cells in
supplying energy demands is enormous, their future growth will likely be constrained
by two major bottlenecks. The first is the high electricity input to produce
crystalline-Si solar cells and modules, and the second is the limited supply of silver
(Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching
terawatt-scale deployment, which means the electricity produced by crystalline-Si
solar cells would never fulfill a noticeable portion of our energy demands in the future.
In order to solve the issue of Ag limitation for the front metal grid, aluminum (Al)
electroplating has been developed as an alternative metallization technique in the
fabrication of crystalline-Si solar cells. The plating is carried out in a
near-room-temperature ionic liquid by means of galvanostatic electrolysis. It has been
found that dense, adherent Al deposits with resistivity in the high 10^–6 ohm-cm range
can be reproducibly obtained directly on Si substrates and nickel seed layers. An
all-Al Si solar cell, with an electroplated Al front electrode and a screen-printed Al
back electrode, has been successfully demonstrated based on commercial p-type
monocrystalline-Si solar cells, and its efficiency is approaching 15%. Further
optimization of the cell fabrication process, in particular a suitable patterning
technique for the front silicon nitride layer, is expected to increase the efficiency of
the cell to ~18%. This shows the potential of Al electroplating in cell metallization is
promising and replacing Ag with Al as the front finger electrode is feasible.