ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Filtering by
- Creators: King, Richard
Highest efficiency single-junction silicon and bottom silicon sub-cell in silicon based tandems employ monocrystalline silicon wafer textured with random pyramids. Therefore, the light trapping performance of random pyramids in silicon solar cells is established. An accurate three-dimensional height map of random pyramids is captured and ray-traced to record the angular distribution of light inside the wafer which shows random pyramids trap light as well as Lambertian scatterer.
Second, the problem of front-surface reflectance common to all modules, planar solar cells and to silicon and perovskite based tandems is dealt. A nano-imprint lithography procedure is developed to fabricate polydimethylsiloxane (PDMS) scattering layer carrying random pyramids that effectively reduces the reflectance. Results show it increased the efficiency of planar semi-transparent perovskite solar cell by 10.6% relative.
Next a detailed assessment of light-management in practical two-terminal perovskite/silicon and perovskite/perovskite tandems is performed to quantify reflectance, parasitic and light-trapping losses. For this first a methodology based on spectroscopic ellipsometry is developed to characterize new absorber materials employed in tandems. Characterized materials include wide-bandgap (CH3NH3I3, CsyFA1-yPb(BrxI1-x)3) and low-bandgap (Cs0.05FA0.5MA0.45(Pb0.5Sn0.5)I3) perovskites and wide-bandgap CdTe alloys (CdZnSeTe). Using this information rigorous optical modeling of two-terminal perovskite/silicon and perovskite/perovskite tandems with varying light management schemes is performed. Thus providing a guideline for further development.
A bowing model is developed for the bandgap and band offsets of the quinary alloy GaInAsSbBi and its quaternary constituents InAsSbBi and GaAsSbBi. The band anticrossing interaction due to the highly mismatched Bi atoms is incorporated into the relevant bowing terms. An algorithm is developed for the design of mid infrared GaInAsSbBi
quantum wells, with three degrees freedom to independently tune transition energy, in plane strain, and band edge offsets for desired electron and hole confinement.
The physical characteristics of the fundamental absorption edge of the relevant III-V binaries GaAs, GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed that describes the key physical characteristics of the absorption edge, including the bandgap energy, the Urbach tail, and the absorption coefficient at the bandgap.
The quantum efficiency and recombination lifetimes of bulk InAs0.911Sb0.089 grown by molecular beam epitaxy is investigated using excitation and temperature dependent steady state photoluminescence. The Shockley-Read-Hall, radiative, and Auger recombination lifetimes are determined.