ETDs

This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.

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Cost-effective integrated wireless monitoring of wafer cleanliness using SOI technology

Description
The thesis focuses on cost-efficient integration of the electro-chemical residue sensor (ECRS), a novel sensor developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes, and wireless transponder circuitry that is…

The thesis focuses on cost-efficient integration of the electro-chemical residue sensor (ECRS), a novel sensor developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes, and wireless transponder circuitry that is based on RFID technology. The proposed technology uses only the NMOS FD-SOI transistors with amorphous silicon as active material with silicon nitride as a gate dielectric. The proposed transistor was simulated under the SILVACO ATLAS Simulation Framework. A parametric study was performed to study the impact of different gate lengths (6 μm to 56 μm), electron motilities (0.1 cm2/Vs to 1 cm2/Vs), gate dielectric (SiO2 and SiNx) and active materials (a-Si and poly-Si) specifications. Level-1 models, that are accurate enough to acquire insight into the circuit behavior and perform preliminary design, were successfully constructed by analyzing drain current and gate to node capacitance characteristics against drain to source and gate to source voltages. Using the model corresponding to SiNx as gate dielectric, a-Si:H as active material with electron mobility equal to 0.4 cm2/V-sec, an operational amplifier was designed and was tested in unity gain configuration at modest load-frequency specifications.
ContributorsPandit, Vedhas (Author) / Vermeire, Bert (Thesis advisor) / Barnaby, Hugh (Committee member) / Chae, Junseok (Committee member) / Arizona State University (Publisher)
Created2010
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Design of a continuous time sigma delta analog-to-digital converter for operation in extreme environments

Description
In this work, a high resolution analog-to-digital converter (ADC) for use in harsh environments is presented. The ADC is implemented in bulk CMOS technology and is intended for space exploration, mining and automotive applications with a range of temperature variation in excess of 250°C. A continuous time (CT) sigma delta…

In this work, a high resolution analog-to-digital converter (ADC) for use in harsh environments is presented. The ADC is implemented in bulk CMOS technology and is intended for space exploration, mining and automotive applications with a range of temperature variation in excess of 250°C. A continuous time (CT) sigma delta modulator employing a cascade of integrators with feed forward (CIFF) architecture in a single feedback loop topology is used for implementing the ADC. In order to enable operation in the intended application environments, an RC time constant tuning engine is proposed. The tuning engine is used to maintain linearity of a 10 ksps 20 bit continuous time sigma delta ADC designed for spectroscopy applications in space. The proposed circuit which is based on master slave architecture automatically selects on chip resistors to control RC time constants to an accuracy range of ±5% to ±1%. The tuning range, tuning accuracy and circuit non-idealities are analyzed theoretically. To verify the concept, an experimental chip was fabricated in JAZZ .18µm 1.8V CMOS technology. The tuning engine which occupies an area of .065mm2; consists of only an integrator, a comparator and a shift register. It can achieve a signal to noise and distortion ratio (SNDR) greater than 120dB over a ±40% tuning range.
ContributorsAnabtawi, Nijad (Author) / Barnaby, Hugh (Thesis advisor) / Vermeire, Bert (Committee member) / Gildenblat, Gennady (Committee member) / Chae, Junseok (Committee member) / Arizona State University (Publisher)
Created2011