ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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- All Subjects: Radio frequency integrated circuits
- Creators: Kitchen, Jennifer
Description
Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
ContributorsJeong, Jae Woong (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below:
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
ContributorsMoallemi, Soroush (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2019