ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 5 of 5
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- All Subjects: Infrared detectors
- All Subjects: Drug screening
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
Detection of molecular interactions is critical for understanding many biological processes, for detecting disease biomarkers, and for screening drug candidates. Fluorescence-based approach can be problematic, especially when applied to the detection of small molecules. Various label-free techniques, such as surface plasmon resonance technique are sensitive to mass, making it extremely challenging to detect small molecules. In this thesis, novel detection methods for molecular interactions are described.
First, a simple detection paradigm based on reflectance interferometry is developed. This method is simple, low cost and can be easily applied for protein array detection.
Second, a label-free charge sensitive optical detection (CSOD) technique is developed for detecting of both large and small molecules. The technique is based on that most molecules relevant to biomedical research and applications are charged or partially charged. An optical fiber is dipped into the well of a microplate. It detects the surface charge of the fiber, which does not decrease with the size (mass) of the molecule, making it particularly attractive for studying small molecules.
Third, a method for mechanically amplification detection of molecular interactions (MADMI) is developed. It provides quantitative analysis of small molecules interaction with membrane proteins in intact cells. The interactions are monitored by detecting a mechanical deformation in the membrane induced by the molecular interactions. With this novel method small molecules and membrane proteins interaction in the intact cells can be detected. This new paradigm provides mechanical amplification of small interaction signals, allowing us to measure the binding kinetics of both large and small molecules with membrane proteins, and to analyze heterogeneous nature of the binding kinetics between different cells, and different regions of a single cell.
Last, by tracking the cell membrane edge deformation, binding caused downstream event – granule secretory has been measured. This method focuses on the plasma membrane change when granules fuse with the cell. The fusion of granules increases the plasma membrane area and thus the cell edge expands. The expansion is localized at the vesicle release location. Granule size was calculated based on measured edge expansion. The membrane deformation due to the granule release is real-time monitored by this method.
First, a simple detection paradigm based on reflectance interferometry is developed. This method is simple, low cost and can be easily applied for protein array detection.
Second, a label-free charge sensitive optical detection (CSOD) technique is developed for detecting of both large and small molecules. The technique is based on that most molecules relevant to biomedical research and applications are charged or partially charged. An optical fiber is dipped into the well of a microplate. It detects the surface charge of the fiber, which does not decrease with the size (mass) of the molecule, making it particularly attractive for studying small molecules.
Third, a method for mechanically amplification detection of molecular interactions (MADMI) is developed. It provides quantitative analysis of small molecules interaction with membrane proteins in intact cells. The interactions are monitored by detecting a mechanical deformation in the membrane induced by the molecular interactions. With this novel method small molecules and membrane proteins interaction in the intact cells can be detected. This new paradigm provides mechanical amplification of small interaction signals, allowing us to measure the binding kinetics of both large and small molecules with membrane proteins, and to analyze heterogeneous nature of the binding kinetics between different cells, and different regions of a single cell.
Last, by tracking the cell membrane edge deformation, binding caused downstream event – granule secretory has been measured. This method focuses on the plasma membrane change when granules fuse with the cell. The fusion of granules increases the plasma membrane area and thus the cell edge expands. The expansion is localized at the vesicle release location. Granule size was calculated based on measured edge expansion. The membrane deformation due to the granule release is real-time monitored by this method.
ContributorsGuan, Yan (Author) / Tao, Nongjian (Thesis advisor) / LaBaer, Joshua (Committee member) / Goryll, Michael (Committee member) / Wang, Shaopeng (Committee member) / Arizona State University (Publisher)
Created2015
Description
Sb-based type-II superlattices (T2SLs) are potential alternative to HgCdTe for infrared detection due to their low manufacturing cost, good uniformity, high structural stability, and suppressed Auger recombination. The emerging InAs/InAsSb T2SLs have minority carrier lifetimes 1-2 orders of magnitude longer than those of the well-studied InAs/InGaSb T2SLs, and therefore have the potential to achieve photodetectors with higher performance. This work develops a novel method to measure the minority carrier lifetimes in infrared materials, and reports a comprehensive characterization of minority carrier lifetime and transport in InAs/InAsSb T2SLs at temperatures below 77 K.
A real-time baseline correction (RBC) method for minority carrier lifetime measurement is developed by upgrading a conventional boxcar-based time-resolved photoluminescence (TRPL) experimental system that suffers from low signal-to-noise ratio due to strong low frequency noise. The key is to modify the impulse response of the conventional TRPL system, and therefore the system becomes less sensitive to the dominant noise. Using this RBC method, the signal-to-noise ratio is improved by 2 orders of magnitude.
A record long minority carrier lifetime of 12.8 μs is observed in a high-quality mid-wavelength infrared InAs/InAsSb T2SLs at 15 K. It is further discovered that this long lifetime is partially due to strong carrier localization, which is revealed by temperature-dependent photoluminescence (PL) and TRPL measurements for InAs/InAsSb T2SLs with different period thicknesses. Moreover, the PL and TRPL results suggest that the atomic layer thickness variation is the main origin of carrier localization, which is further confirmed by a calculation using transfer matrix method.
To study the impact of the carrier localization on the device performance of InAs/InAsSb photodetectors, minority hole diffusion lengths are determined by the simulation of external quantum efficiency (EQE). A comparative study shows that carrier localization has negligible effect on the minority hole diffusion length in InAs/InAsSb T2SLs, and the long minority carrier lifetimes enhanced by carrier localization is not beneficial for photodetector operation.
A real-time baseline correction (RBC) method for minority carrier lifetime measurement is developed by upgrading a conventional boxcar-based time-resolved photoluminescence (TRPL) experimental system that suffers from low signal-to-noise ratio due to strong low frequency noise. The key is to modify the impulse response of the conventional TRPL system, and therefore the system becomes less sensitive to the dominant noise. Using this RBC method, the signal-to-noise ratio is improved by 2 orders of magnitude.
A record long minority carrier lifetime of 12.8 μs is observed in a high-quality mid-wavelength infrared InAs/InAsSb T2SLs at 15 K. It is further discovered that this long lifetime is partially due to strong carrier localization, which is revealed by temperature-dependent photoluminescence (PL) and TRPL measurements for InAs/InAsSb T2SLs with different period thicknesses. Moreover, the PL and TRPL results suggest that the atomic layer thickness variation is the main origin of carrier localization, which is further confirmed by a calculation using transfer matrix method.
To study the impact of the carrier localization on the device performance of InAs/InAsSb photodetectors, minority hole diffusion lengths are determined by the simulation of external quantum efficiency (EQE). A comparative study shows that carrier localization has negligible effect on the minority hole diffusion length in InAs/InAsSb T2SLs, and the long minority carrier lifetimes enhanced by carrier localization is not beneficial for photodetector operation.
ContributorsLin, Zhiyuan (Author) / Zhang, Yong-Hang (Thesis advisor) / Vasileska, Dragica (Committee member) / Johnson, Shane (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.
The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.
After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.
The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.
Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.
After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.
The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.
Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
ContributorsShen, Xiaomeng (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David J. (Thesis advisor) / Alford, Terry (Committee member) / Goryll, Michael (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2015
Description
In the past decades, single-cell metabolic analysis has been playing a key role in understanding cellular heterogeneity, disease initiation, progression, and drug resistance. Therefore, it is critical to develop technologies for individual cellular metabolic analysis using various configurations of microfluidic devices. Compared to bulk-cell analysis which is widely used by reporting an averaged measurement, single-cell analysis is able to present the individual cellular responses to the external stimuli. Particularly, oxygen consumption rate (OCR) and extracellular acidification rate (ECAR) are two key parameters to monitor heterogeneous metabolic profiles of cancer cells. To achieve multi-parameter metabolic measurements on single cells, several technical challenges need to be overcome: (1) low adhesion of soft materials micro-fabricated on glass surface for multiple-sensor deposition and single-cell immobilization, e.g. SU-8, KMPR, etc.; (2) high risk of using external mechanical forces to create hermetic seals between two rigid fused silica parts, even with compliance layers; (3) how to accomplish high-throughput for single-cell trapping, metabolic profiling and drug screening; (4) high process cost of micromachining on glass substrate and incapability of mass production.
In this dissertation, the development of microfabrication technologies is demonstrated to design reliable configurations for analyzing multiple metabolic parameters from single cells, including (1) improved KMPR/SU-8 microfabrication protocols for fabricating microwell arrays that can be integrated and sealed to 3 × 3 tri-color sensor arrays for OCR and ECAR measurements; (2) design and characterization of a microfluidic device enabling rapid single-cell trapping and hermetic sealing single cells and tri-color sensors within 10 × 10 hermetically sealed microchamber arrays; (3) exhibition of a low-cost microfluidic device based on plastics for single-cell metabolic multi-parameter profiling. Implementation of these improved microfabrication methods should address the aforementioned challenges and provide a high throughput and multi-parameter single cell metabolic analysis platform.
In this dissertation, the development of microfabrication technologies is demonstrated to design reliable configurations for analyzing multiple metabolic parameters from single cells, including (1) improved KMPR/SU-8 microfabrication protocols for fabricating microwell arrays that can be integrated and sealed to 3 × 3 tri-color sensor arrays for OCR and ECAR measurements; (2) design and characterization of a microfluidic device enabling rapid single-cell trapping and hermetic sealing single cells and tri-color sensors within 10 × 10 hermetically sealed microchamber arrays; (3) exhibition of a low-cost microfluidic device based on plastics for single-cell metabolic multi-parameter profiling. Implementation of these improved microfabrication methods should address the aforementioned challenges and provide a high throughput and multi-parameter single cell metabolic analysis platform.
ContributorsSong, Ganquan (Author) / Meldrum, Deirdre R. (Thesis advisor) / Goryll, Michael (Committee member) / Kelbauskas, Laimonas (Committee member) / Wang, Hong (Committee member) / Arizona State University (Publisher)
Created2017