ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 11
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- All Subjects: Physics
- Creators: Vachaspati, Tanmay
- Creators: Zhang, Yong-Hang
Description
This thesis addresses certain quantum aspects of the event horizon using the AdS/CFT correspondence. This correspondence is profound since it describes a quantum theory of gravity in d + 1 dimensions from the perspective of a dual quantum field theory living in d dimensions. We begin by considering Rindler space which is the part of Minkowski space seen by an observer with a constant proper acceleration. Because it has an event horizon, Rindler space has been studied in great detail within the context of quantum field theory. However, a quantum gravitational treatment of Rindler space is handicapped by the fact that quantum gravity in flat space is poorly understood. By contrast, quantum gravity in anti-de Sitter space (AdS), is relatively well understood via the AdS/CFT correspondence. Taking this cue, we construct Rindler coordinates for AdS (Rindler-AdS space) in d + 1 spacetime dimensions. In three spacetime dimensions, we find novel one-parameter families of stationary vacua labeled by a rotation parameter β. The interesting thing about these rotating Rindler-AdS spaces is that they possess an observer-dependent ergoregion in addition to having an event horizon. Turning next to the application of AdS/CFT correspondence to Rindler-AdS space, we posit that the two Rindler wedges in AdSd+1 are dual to an entangled conformal field theory (CFT) that lives on two boundaries with geometry R × Hd-1. Specializing to three spacetime dimensions, we derive the thermodynamics of Rindler-AdS space using the boundary CFT. We then probe the causal structure of the spacetime by sending in a time-like source and observe that the CFT “knows” when the source has fallen past the Rindler horizon. We conclude by proposing an alternate foliation of Rindler-AdS which is dual to a CFT living in de Sitter space. Towards the end, we consider the concept of weak measurements in quantum mechanics, wherein the measuring instrument is weakly coupled to the system being measured. We consider such measurements in the context of two examples, viz. the decay of an excited atom, and the tunneling of a particle trapped in a well, and discuss the salient features of such measurements.
ContributorsSamantray, Prasant (Author) / Parikh, Maulik (Thesis advisor) / Davies, Paul (Committee member) / Vachaspati, Tanmay (Committee member) / Easson, Damien (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2012
Description
For this project, the diffuse supernova neutrino background (DSNB) has been calculated based on the recent direct supernova rate measurements and neutrino spectrum from SN1987A. The estimated diffuse electron antineutrino flux is ∼ 0.10 – 0.59 /cm2/s at 99% confidence level, which is 5 times lower than the Super-Kamiokande 2012 upper limit of 3.0 /cm2/s, above energy threshold of 17.3 MeV. With a Megaton scale water detector, 40 events could be detected above the threshold per year. In addition, the detectability of neutrino bursts from direct black hole forming collapses (failed supernovae) at Megaton detectors is calculated. These neutrino bursts are energetic and with short time duration, ∼ 1s. They could be identified by the time coincidence of N ≥2 or N ≥3 events within 1s time window from nearby (4 – 5 Mpc) failed supernovae. The detection rate of these neutrino bursts could get up to one per decade. This is a realistic way to detect a failed supernova and gives a promising method for studying the physics of direct black hole formation mechanism. Finally, the absorption of ultra high energy (UHE) neutrinos by the cosmic neutrino background, with full inclusion of the effect of the thermal distribution of the background on the resonant annihilation channel, is discussed. Results are applied to serval models of UHE neutrino sources. Suppression effects are strong for sources that extend beyond z ∼ 10. This provides a fascinating probe of the physics of the relic neutrino background in the unexplored redshift interval z ∼ 10 – 100. Ultimately this research will examine the detectability of DSNB, neutrino bursts from failed supernovae and absorption effects in the neutrino spectrum.
ContributorsYang, Lili, 1970- (Author) / Lunardini, Cecilia (Thesis advisor) / Alarcon, Ricardo (Committee member) / Shovkovy, Igor (Committee member) / Timmes, Francis (Committee member) / Vachaspati, Tanmay (Committee member) / Arizona State University (Publisher)
Created2013
Description
Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs.
ContributorsFan, Jin (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2012
Description
Proton radiotherapy has recently become a popular form of cancer treatment. For maximum effectiveness, accurate models are needed to calculate proton angular scattering and energy loss. Scattering events are statistically independent and may be calculated from the effective number of events per reciprocal multiple scattering angle or energy loss. It is shown that multiple scattering distributions from Molière’s scattering law can be convolved by depth for accurate numerical calculation of angular distributions in several example materials. This obviates the need for correction factors to the analytic solution and its approximations. It is also shown that numerically solving Molière’s scattering law in terms of the complete (non-small angle) differential cross section and large angle approximations extends the validity of Molière theory to large angles. To calculate probability energy loss distributions, Landau-Vavilov theory is adapted to Fourier transforms and extended to very thick targets through convolution over the probability energy loss distributions in each depth interval. When the depth is expressed in terms of the continuous slowing down approximation (CSDA) the resulting probability energy loss distributions rely on the mean excitation energy as the sole material dependent parameter. Through numerical calculation of the CSDA over the desired energy loss, this allows the energy loss cross section to vary across the distribution and accurately accounts for broadening and skewness for thick targets in a compact manner. An analytic, Fourier transform solution to Vavilov’s integral is shown. A single scattering nuclear model that calculates large angle dose distributions that have a similar functional form to FLUKA (FLUktuierende KAskade) Monte Carlo, is also introduced. For incorporation into Monte Carlo or a treatment planning system, lookup tables of the number of scattering events or cross sections for different clinical energies may be used to determine angular or energy loss distributions.
ContributorsBrosch, Ryan Michael (Author) / Rez, Peter (Thesis advisor) / Alarcon, Ricardo O (Thesis advisor) / Vachaspati, Tanmay (Committee member) / Treacy, Michael M.J. (Committee member) / Arizona State University (Publisher)
Created2022
Description
As a demonstration study of low-resolution spectrophotometry, the photometric redshift estimation with narrow-band optical photometry of nine galaxy clusters is presented in this thesis. A complete data reduction process of the photometryusing up to 16 10nm wide narrow-band optical filters from 490nm − 660nm are provided. Narrow-band photometry data are combined with broad-band photometry (SDSS/Pan-STARRS) for photometric redshift fitting. With available spectroscopic
redshift data from eight of the fields, I evaluated the fitted photometric redshift results and showed that combining broad-band photometric data with narrow-band data result in improvements of factor 2-3, compared to redshift estimations from
broad-band photometry alone. With 15 or 16 narrow-band data combined with SDSS (Sloan Digital Sky Survey) or Pan-STARRS1 (The Panoramic Survey Telescope and Rapid Response System) data, a Normalized Median Absolute Deviation of σNMAD ∼ 0.01−0.016 can be achieved.
The multiband images of galaxy cluster ABELL 611 have been used to further study intracluster light around its brightest cluster galaxy (BCG). It can be shown here that fitting of BCG+ICL stellar properties using the averaged 1-dimensional
radial profile is possible up to ∼ 100kpc within this cluster. The decreasing in age of the stellar population as a function of radius from the BCG+ICL profile, though not entirely conclusive, demonstrates possible future application of low-resolution
spectrophotometry on the ICL studies.
Finally, Spectro-Photometer for the History of the Universe, Epoch of Reionization, and Ices Explorer (SPHEREx) mission planning study are covered, and a methodology of visualization tool for target availability is described.
ContributorsWang, Pao-Yu (Author) / Mauskopf, Philip (Thesis advisor) / Butler, Nathaniel (Committee member) / Jansen, Rolf (Committee member) / Vachaspati, Tanmay (Committee member) / Arizona State University (Publisher)
Created2022
Description
InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.
The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.
After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.
The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.
Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.
After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.
The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.
Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
ContributorsShen, Xiaomeng (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David J. (Thesis advisor) / Alford, Terry (Committee member) / Goryll, Michael (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2015
Description
The Cosmic Microwave Background (CMB) has provided precise information on the evolution of the Universe and the current cosmological paradigm. The CMB has not yet provided definitive information on the origin and strength of any primordial magnetic fields or how they affect the presence of magnetic fields observed throughout the cosmos. This work outlines an alternative method to investigating and identifying the presence of cosmic magnetic fields. This method searches for Faraday Rotation (FR) and specifically uses polarized CMB photons as back-light. I find that current generation CMB experiments may be not sensitive enough to detect FR but next generation experiments should be able to make highly significant detections. Identifying FR with the CMB will provide information on the component of magnetic fields along the line of sight of observation.
The 21cm emission from the hyperfine splitting of neutral Hydrogen in the early universe is predicted to provide precise information about the formation and evolution of cosmic structure, complementing the wealth of knowledge gained from the CMB.
21cm cosmology is a relatively new field, and precise measurements of the Epoch of Reionization (EoR) have not yet been achieved. In this work I present 2σ upper limits on the power spectrum of 21cm fluctuations (Δ²(k)) probed at the cosmological wave number k from the Donald C. Backer Precision Array for Probing the Epoch of Reionization (PAPER) 64 element deployment. I find upper limits on Δ²(k) in the range 0.3 < k < 0.6 h/Mpc to be (650 mK)², (450 mK)², (390 mK)², (250 mK)², (280mK)², (250 mK)² at redshifts z = 10.87, 9.93, 8.91, 8.37, 8.13 and 7.48 respectively
Building on the power spectrum analysis, I identify a major limiting factor in detecting the 21cm power spectrum.
This work is concluded by outlining a metric to evaluate the predisposition of redshifted 21cm interferometers to foreground contamination in power spectrum estimation. This will help inform the construction of future arrays and enable high fidelity imaging and
cross-correlation analysis with other high redshift cosmic probes like the CMB and other upcoming all sky surveys. I find future
arrays with uniform (u,v) coverage and small spectral evolution of their response in the (u,v,f) cube can minimize foreground leakage while pursuing 21cm imaging.
The 21cm emission from the hyperfine splitting of neutral Hydrogen in the early universe is predicted to provide precise information about the formation and evolution of cosmic structure, complementing the wealth of knowledge gained from the CMB.
21cm cosmology is a relatively new field, and precise measurements of the Epoch of Reionization (EoR) have not yet been achieved. In this work I present 2σ upper limits on the power spectrum of 21cm fluctuations (Δ²(k)) probed at the cosmological wave number k from the Donald C. Backer Precision Array for Probing the Epoch of Reionization (PAPER) 64 element deployment. I find upper limits on Δ²(k) in the range 0.3 < k < 0.6 h/Mpc to be (650 mK)², (450 mK)², (390 mK)², (250 mK)², (280mK)², (250 mK)² at redshifts z = 10.87, 9.93, 8.91, 8.37, 8.13 and 7.48 respectively
Building on the power spectrum analysis, I identify a major limiting factor in detecting the 21cm power spectrum.
This work is concluded by outlining a metric to evaluate the predisposition of redshifted 21cm interferometers to foreground contamination in power spectrum estimation. This will help inform the construction of future arrays and enable high fidelity imaging and
cross-correlation analysis with other high redshift cosmic probes like the CMB and other upcoming all sky surveys. I find future
arrays with uniform (u,v) coverage and small spectral evolution of their response in the (u,v,f) cube can minimize foreground leakage while pursuing 21cm imaging.
ContributorsKolopanis, Matthew John (Author) / Bowman, Judd (Thesis advisor) / Mauskopf, Philip (Thesis advisor) / Lunardini, Cecilia (Committee member) / Chamberlin, Ralph (Committee member) / Vachaspati, Tanmay (Committee member) / Arizona State University (Publisher)
Created2018
Description
Two ideas that extends on the theory of General Relativity are introduced and then the phenomenology they can offer is explored. The first idea shows how certain types of $f(R)$ gravity allows for traversable wormholes among its vacuum solutions. This is surprising to find in such simple setting as these type of solutions usually requires fairly complex constructions to satisfy the equations of motion of a gravitational theory. The second idea is the matter bounce description of the early universe where a fairly unique feature of the model is identified. Consequences of this feature could allow the paradigm to distinguish itself from other alternative descriptions, such as inflation, through late time observations. An explicit example of this claim is worked out by studying a model involving an interaction in the dark sector. Results of a more astrophysical nature, where a careful analysis of the morphology of blazar halos is performed, are also presented in the Appendix. The analysis determined that the $Q$-statistic is an appropriate tool to probe the properties of the intergalactic magnetic fields responsible for the halos formation.
ContributorsDuplessis, Francis (Author) / Easson, Damien (Thesis advisor) / Vachaspati, Tanmay (Committee member) / Mauskopf, Philip (Committee member) / Parikh, Maulik (Committee member) / Arizona State University (Publisher)
Created2017
Description
This dissertation describes the characterization of optoelectronic and electronic materials being considered for next generation semiconductor devices, primarily using electron microscopy techniques. The research included refinement of growth parameters for optimizing material quality, and investigation of heterostructured interfaces. The results provide better understanding of the fundamental materials science and should lead to future improvements in device applications.
A microstructural study of tin selenide and tin manganese selenide thin films grown by molecular beam epitaxy (MBE) on GaAs (111)B substrates with different Se:Sn flux ratios and Mn concentrations was carried out. Low flux ratios lead to highly defective films, mostly consisting of SnSe, whereas higher flux ratios gave higher quality, single-phase SnSe2. The ternary (Sn,Mn)Se films evolved quasi-coherently, as the Mn concentration increased, from SnSe2 into a complex lattice, and then into MnSe with 3D rock-salt structure. These structural transformations should underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.
II-VI/III-V compound semiconductor heterostructures have been characterized for growth in both single- and dual-chamber MBE systems. Three groups of lattice-matched materials have been investigated: i) 5.65Å materials based on GaAs, ii) 6.1Å materials based on InAs or GaSb, and iii) 6.5Å materials based on InSb. High quality II-VI materials grown on III-V substrates were demonstrated for ZnTe/GaSb and CdTe/InSb. III-V materials grown on II-VI buffer layers present additional challenges and were grown with varying degrees of success. InAsSb quantum wells in between ZnTe barriers were nearly defect-free, but showed 3D island growth. All other materials demonstrated flat interfaces, despite low growth temperature, but with stacking faults in the II-VI materials.
Femtosecond laser-induced defects (LIDs) in silicon solar cells were characterized using a variety of electron microscopy techniques. Scanning electron microscope (SEM) images showed that the intersections of laser lines, finger and busbar intersections, exhibited LIDs with the potential to shunt the contacts. SEM and transmission electron microscope (TEM) images correlated these LIDs with ablated c-Si and showed these defects to come in two sizes ~40nm and ~.5µm. The elemental profiles across defective and non-defective regions were found using energy dispersive x-ray spectroscopy.
A microstructural study of tin selenide and tin manganese selenide thin films grown by molecular beam epitaxy (MBE) on GaAs (111)B substrates with different Se:Sn flux ratios and Mn concentrations was carried out. Low flux ratios lead to highly defective films, mostly consisting of SnSe, whereas higher flux ratios gave higher quality, single-phase SnSe2. The ternary (Sn,Mn)Se films evolved quasi-coherently, as the Mn concentration increased, from SnSe2 into a complex lattice, and then into MnSe with 3D rock-salt structure. These structural transformations should underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.
II-VI/III-V compound semiconductor heterostructures have been characterized for growth in both single- and dual-chamber MBE systems. Three groups of lattice-matched materials have been investigated: i) 5.65Å materials based on GaAs, ii) 6.1Å materials based on InAs or GaSb, and iii) 6.5Å materials based on InSb. High quality II-VI materials grown on III-V substrates were demonstrated for ZnTe/GaSb and CdTe/InSb. III-V materials grown on II-VI buffer layers present additional challenges and were grown with varying degrees of success. InAsSb quantum wells in between ZnTe barriers were nearly defect-free, but showed 3D island growth. All other materials demonstrated flat interfaces, despite low growth temperature, but with stacking faults in the II-VI materials.
Femtosecond laser-induced defects (LIDs) in silicon solar cells were characterized using a variety of electron microscopy techniques. Scanning electron microscope (SEM) images showed that the intersections of laser lines, finger and busbar intersections, exhibited LIDs with the potential to shunt the contacts. SEM and transmission electron microscope (TEM) images correlated these LIDs with ablated c-Si and showed these defects to come in two sizes ~40nm and ~.5µm. The elemental profiles across defective and non-defective regions were found using energy dispersive x-ray spectroscopy.
ContributorsTracy, Brian David (Author) / Smith, David J. (Thesis advisor) / Bennett, Peter A (Committee member) / Drucker, Jeffery (Committee member) / Mccartney, Martha R (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2018
Description
Extended crystal defects often play a critical role in determining semiconductor device performance. This dissertation describes the application of transmission electron microscopy (TEM) and aberration-corrected scanning TEM (AC-STEM) to study defect clusters and the atomic-scale structure of defects in compound semiconductors.
An extensive effort was made to identify specific locations of crystal defects in epitaxial CdTe that might contribute to degraded light-conversion efficiency. Electroluminescence (EL) mapping and the creation of surface etch pits through chemical treatment were combined in attempts to identify specific structural defects for subsequent TEM examination. Observations of these specimens revealed only surface etch pits, without any visible indication of extended defects near their base. While chemical etch pits could be helpful for precisely locating extended defects that intersect with the treated surface, this study concluded that surface roughness surrounding etch pits would likely mitigate against their usefulness.
Defect locations in GaAs solar-cell devices were identified using combinations of EL, photoluminescence, and Raman scattering, and then studied more closely using TEM. Observations showed that device degradation was invariably associated with a cluster of extended defects, rather than a single defect, as previously assumed. AC-STEM observations revealed that individual defects within each cluster consisted primarily of intrinsic stacking faults terminated by 30° and 90° partial dislocations, although other defect structures were also identified. Lomer dislocations were identified near locations where two lines of strain contrast intersected in a large cluster, and a comparatively shallow cluster, largely constrained to the GaAs emitter layer, contained 60° perfect dislocations associated with localized strain contrast.
In another study, misfit dislocations at II-VI/III-V heterovalent interfaces were investigated and characterized using AC-STEM. Misfit strain at ZnTe/GaAs interfaces, which have relatively high lattice mismatch (7.38%), was relieved primarily through Lomer dislocations, while ZnTe/InP interfaces, with only 3.85% lattice mismatch, were relaxed by a mixture of 60° perfect dislocations, 30° partial dislocations, and Lomer dislocations. These results were consistent with the previous findings that misfit strain was relaxed primarily through 60° perfect dislocations that had either dissociated into partial dislocations or interacted to form Lomer dislocations as the amount of misfit strain increased.
An extensive effort was made to identify specific locations of crystal defects in epitaxial CdTe that might contribute to degraded light-conversion efficiency. Electroluminescence (EL) mapping and the creation of surface etch pits through chemical treatment were combined in attempts to identify specific structural defects for subsequent TEM examination. Observations of these specimens revealed only surface etch pits, without any visible indication of extended defects near their base. While chemical etch pits could be helpful for precisely locating extended defects that intersect with the treated surface, this study concluded that surface roughness surrounding etch pits would likely mitigate against their usefulness.
Defect locations in GaAs solar-cell devices were identified using combinations of EL, photoluminescence, and Raman scattering, and then studied more closely using TEM. Observations showed that device degradation was invariably associated with a cluster of extended defects, rather than a single defect, as previously assumed. AC-STEM observations revealed that individual defects within each cluster consisted primarily of intrinsic stacking faults terminated by 30° and 90° partial dislocations, although other defect structures were also identified. Lomer dislocations were identified near locations where two lines of strain contrast intersected in a large cluster, and a comparatively shallow cluster, largely constrained to the GaAs emitter layer, contained 60° perfect dislocations associated with localized strain contrast.
In another study, misfit dislocations at II-VI/III-V heterovalent interfaces were investigated and characterized using AC-STEM. Misfit strain at ZnTe/GaAs interfaces, which have relatively high lattice mismatch (7.38%), was relieved primarily through Lomer dislocations, while ZnTe/InP interfaces, with only 3.85% lattice mismatch, were relaxed by a mixture of 60° perfect dislocations, 30° partial dislocations, and Lomer dislocations. These results were consistent with the previous findings that misfit strain was relaxed primarily through 60° perfect dislocations that had either dissociated into partial dislocations or interacted to form Lomer dislocations as the amount of misfit strain increased.
ContributorsMcKeon, Brandon (Author) / Smith, David J. (Thesis advisor) / McCartney, Martha R. (Thesis advisor) / Liu, Jingyue (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2020