ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 10
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- All Subjects: Electrical Engineering
- Creators: Clark, Lawrence
Description
Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.
ContributorsRavi, Venkatesa (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.
ContributorsKumar, Sushil (Author) / Clark, Lawrence (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
This work describes the development of automated flows to generate pad rings, mixed signal power grids, and mega cells in a multi-project test chip. There were three major design flows that were created to create the test chip. The first was the pad ring which was used as the staring block for creating the test chip. This flow put all of the signals for the chip in the order that was wanted along the outside of the die along with creation of the power ring that is used to supply the chip with a robust power source.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
The second flow that was created was used to put together a flash block that is based off of a XILIX XCFXXP. This flow was somewhat similar to how the pad ring flow worked except that optimizations and a clock tree was added into the flow. There was a couple of design redoes due to timing and orientation constraints.
Finally, the last flow that was created was the top level flow which is where all of the components are combined together to create a finished test chip ready for fabrication. The main components that were used were the finished flash block, HERMES, test structures, and a clock instance along with the pad ring flow for the creation of the pad ring and power ring.
Also discussed is some work that was done on a previous multi-project test chip. The work that was done was the creation of power gaters that were used like switches to turn the power on and off for some flash modules. To control the power gaters the functionality change of some pad drivers was done so that they output a higher voltage than what is seen in the core of the chip.
ContributorsLieb, Christopher (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2015
Description
The space environment comprises cosmic ray particles, heavy ions and high energy electrons and protons. Microelectronic circuits used in space applications such as satellites and space stations are prone to upsets induced by these particles. With transistor dimensions shrinking due to continued scaling, terrestrial integrated circuits are also increasingly susceptible to radiation upsets. Hence radiation hardening is a requirement for microelectronic circuits used in both space and terrestrial applications.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques.
A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS.
A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection.
Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown.
ContributorsShambhulingaiah, Sandeep (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Seo, Jae sun (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
Ever reducing time to market, along with short product lifetimes, has created a need to shorten the microprocessor design time. Verification of the design and its analysis are two major components of this design cycle. Design validation techniques can be broadly classified into two major categories: simulation based approaches and formal techniques. Simulation based microprocessor validation involves running millions of cycles using random or pseudo random tests and allows verification of the register transfer level (RTL) model against an architectural model, i.e., that the processor executes instructions as required. The validation effort involves model checking to a high level description or simulation of the design against the RTL implementation. Formal techniques exhaustively analyze parts of the design but, do not verify RTL against the architecture specification. The focus of this work is to implement a fully automated validation environment for a MIPS based radiation hardened microprocessor using simulation based approaches. The basic framework uses the classical validation approach in which the design to be validated is described in a Hardware Definition Language (HDL) such as VHDL or Verilog. To implement a simulation based approach a number of random or pseudo random tests are generated. The output of the HDL based design is compared against the one obtained from a "perfect" model implementing similar functionality, a mismatch in the results would thus indicate a bug in the HDL based design. Effort is made to design the environment in such a manner that it can support validation during different stages of the design cycle. The validation environment includes appropriate changes so as to support architecture changes which are introduced because of radiation hardening. The manner in which the validation environment is build is highly dependent on the specifications of the perfect model used for comparisons. This work implements the validation environment for two MIPS simulators as the reference model. Two bugs have been discovered in the RTL model, using simulation based approaches through the validation environment.
ContributorsSharma, Abhishek (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Negative bias temperature instability (NBTI) is a leading aging mechanism in modern digital and analog circuits. Recent NBTI data exhibits an excessive amount of randomness and fast recovery, which are difficult to be handled by conventional power-law model (tn). Such discrepancies further pose the challenge on long-term reliability prediction under statistical variations and Dynamic Voltage Scaling (DVS) in real circuit operation. To overcome these barriers, the modeling effort in this work (1) practically explains the aging statistics due to randomness in number of traps with log(t) model, accurately predicting the mean and variance shift; (2) proposes cycle-to-cycle model (from the first-principle of trapping) to handle aging under multiple supply voltages, predicting the non-monotonic behavior under DVS (3) presents a long-term model to estimate a tight upper bound of dynamic aging over multiple cycles, and (4) comprehensively validates the new set of aging models with 65nm statistical silicon data. Compared to previous models, the new set of aging models capture the aging variability and the essential role of the recovery phase under DVS, reducing unnecessary guard-banding during the design stage. With CMOS technology scaling, design for reliability has become an important step in the design cycle, and increased the need for efficient and accurate aging simulation methods during the design stage. NBTI induced delay shifts in logic paths are asymmetric in nature, as opposed to averaging effect due to recovery assumed in traditional aging analysis. Timing violations due to aging, in particular, are very sensitive to the standby operation regime of a digital circuit. In this report, by identifying the critical moments in circuit operation and considering the asymmetric aging effects, timing violations under NBTI effect are correctly predicted. The unique contributions of the simulation flow include: (1) accurate modeling of aging induced delay shift due to threshold voltage (Vth) shift using only the delay dependence on supply voltage from cell library; (2) simulation flow for asymmetric aging analysis is proposed and conducted at critical points in circuit operation; (3) setup and hold timing violations due to NBTI aging in logic and clock buffer are investigated in sequential circuits and (4) proposed framework is tested in VLSI applications such DDR memory circuits. This methodology is comprehensively demonstrated with ISCAS89 benchmark circuits using a 45nm Nangate standard cell library characterized using predictive technology models. Our proposed design margin assessment provides design insights and enables resilient techniques for mitigating digital circuit aging.
ContributorsVelamala, Jyothi Bhaskarr (Author) / Cao, Yu (Thesis advisor) / Clark, Lawrence (Committee member) / Chakrabarti, Chaitali (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control on subthreshold leakage and saturation current over planar MOSFETs while having the desired current drive. The FinFET structure has an undoped or fully depleted fin, which supports immunity from random dopant fluctuations (RDF – a phenomenon which causes a reduction in the threshold voltage and is prominent at sub 50 nm tech nodes due to lesser dopant atoms) and thus causes threshold voltage (Vth) roll-off by reducing the Vth. However, as the advanced CMOS technologies are shrinking down to a 5 nm technology node, subthreshold leakage and drain-induced-barrier-lowering (DIBL) are driving the introduction of new metal-oxide-semiconductor field-effect transistor (MOSFET) structures to improve performance. GAA field effect transistors are shown to be the potential candidates for these advanced nodes. In nanowire devices, due to the presence of the gate on all sides of the channel, DIBL should be lower compared to the FinFETs.
A 3-D technology computer aided design (TCAD) device simulation is done to compare the performance of FinFET and GAA nanowire structures with vertically stacked horizontal nanowires. Subthreshold slope, DIBL & saturation current are measured and compared between these devices. The FinFET’s device performance has been matched with the ASAP7 compact model with the impact of tensile and compressive strain on NMOS & PMOS respectively. Metal work function is adjusted for the desired current drive. The nanowires have shown better electrostatic performance over FinFETs with excellent improvement in DIBL and subthreshold slope. This proves that horizontal nanowires can be the potential candidate for 5 nm technology node. A GAA nanowire structure for 5 nm tech node is characterized with a gate length of 15 nm. The structure is scaled down from 7 nm node to 5 nm by using a scaling factor of 0.7.
A 3-D technology computer aided design (TCAD) device simulation is done to compare the performance of FinFET and GAA nanowire structures with vertically stacked horizontal nanowires. Subthreshold slope, DIBL & saturation current are measured and compared between these devices. The FinFET’s device performance has been matched with the ASAP7 compact model with the impact of tensile and compressive strain on NMOS & PMOS respectively. Metal work function is adjusted for the desired current drive. The nanowires have shown better electrostatic performance over FinFETs with excellent improvement in DIBL and subthreshold slope. This proves that horizontal nanowires can be the potential candidate for 5 nm technology node. A GAA nanowire structure for 5 nm tech node is characterized with a gate length of 15 nm. The structure is scaled down from 7 nm node to 5 nm by using a scaling factor of 0.7.
ContributorsRana, Parshant (Author) / Clark, Lawrence (Thesis advisor) / Ferry, David (Committee member) / Brunhaver, John (Committee member) / Arizona State University (Publisher)
Created2017
Description
To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact on leading products, advanced circuit design exploration must begin concurrently with early silicon development. Therefore, an accurate and scalable model is desired to correctly capture those effects and flexible to extend to alternative process choices. For example, strain technology has been successfully integrated into CMOS fabrication to improve transistor performance but the stress is non-uniformly distributed in the channel, leading to systematic performance variations. In this dissertation, a new layout-dependent stress model is proposed as a function of layout, temperature, and other device parameters. Furthermore, a method of layout decomposition is developed to partition the layout into a set of simple patterns for model extraction. These solutions significantly reduce the complexity in stress modeling and simulation. On the other hand, semiconductor devices with self-feedback mechanisms are emerging as promising alternatives to CMOS. Fe-FET was proposed to improve the switching by integrating a ferroelectric material as gate insulator in a MOSFET structure. Under particular circumstances, ferroelectric capacitance is effectively negative, due to the negative slope of its polarization-electrical field curve. This property makes the ferroelectric layer a voltage amplifier to boost surface potential, achieving fast transition. A new threshold voltage model for Fe-FET is developed, and is further revealed that the impact of random dopant fluctuation (RDF) can be suppressed. Furthermore, through silicon via (TSV), a key technology that enables the 3D integration of chips, is studied. TSV structure is usually a cylindrical metal-oxide-semiconductors (MOS) capacitor. A piecewise capacitance model is proposed for 3D interconnect simulation. Due to the mismatch in coefficients of thermal expansion (CTE) among materials, thermal stress is observed in TSV process and impacts neighboring devices. The stress impact is investigated to support the interaction between silicon process and IC design at the early stage.
ContributorsWang, Chi-Chao (Author) / Cao, Yu (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Clark, Lawrence (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2011
Description
A Single Event Transient (SET) is a transient voltage pulse induced by an ionizing radiation particle striking a combinational logic node in a circuit. The probability of a storage element capturing the transient pulse depends on the width of the pulse. Measuring the rate of occurrence and the distribution of SET pulse widths is essential to understand the likelihood of soft errors and to develop cost-effective mitigation schemes. Existing research measures the pulse width of SETs in bulk Complementary Metal-Oxide-Semiconductor (CMOS) and Silicon On Insulator (SOI) technologies, but not on Fin Field-Effect Transistors (FinFETs). This thesis focuses on developing a test structure on the FinFET process to generate, propagate, and separate SETs and build a time-to-digital converter to measure the pulse width of SET.
The proposed SET test structure statistically separates SETs generated at NMOS and PMOS based on the difference in restoring current. It consists of N-collection devices to collect events at NMOS and P-collection devices to collect events at PMOS. The events that occur in PMOS of the N-collection device and NMOS of the P-collection device are false events. The logic gates of the collection devices are skewed to perform pulse expansion so that a minimally sustained SET propagates without getting suppressed by the contamination delay. A symmetric tree structure with an S-R latch event detector localizes the location of the SET. The Cartesian coordinates-based pulse injection structure injects external pulses at specific nodes to perform instrumentation and calibrate the measurement. A thermometer-encoded chain (vernier chain) with mismatched delay paths measures the width of the SET.
For low Linear Energy Transfer (LET) tests, the false events are entirely masked and do not propagate since the amount of charge that has to be deposited for successful event propagation is significantly high. In the case of high LET tests, the actual events and false events propagate, but they can be separated based on the SET location and the width of the output event. The vernier chain has a high measurement resolution of ~3.5ps, which aids in separating the events.
The proposed SET test structure statistically separates SETs generated at NMOS and PMOS based on the difference in restoring current. It consists of N-collection devices to collect events at NMOS and P-collection devices to collect events at PMOS. The events that occur in PMOS of the N-collection device and NMOS of the P-collection device are false events. The logic gates of the collection devices are skewed to perform pulse expansion so that a minimally sustained SET propagates without getting suppressed by the contamination delay. A symmetric tree structure with an S-R latch event detector localizes the location of the SET. The Cartesian coordinates-based pulse injection structure injects external pulses at specific nodes to perform instrumentation and calibrate the measurement. A thermometer-encoded chain (vernier chain) with mismatched delay paths measures the width of the SET.
For low Linear Energy Transfer (LET) tests, the false events are entirely masked and do not propagate since the amount of charge that has to be deposited for successful event propagation is significantly high. In the case of high LET tests, the actual events and false events propagate, but they can be separated based on the SET location and the width of the output event. The vernier chain has a high measurement resolution of ~3.5ps, which aids in separating the events.
ContributorsShreedharan, Sanjay (Author) / Brunhaver, John (Thesis advisor) / Clark, Lawrence (Committee member) / Sanchez Esqueda, Ivan (Committee member) / Arizona State University (Publisher)
Created2020