ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 11
Filtering by
- All Subjects: Electrical Engineering
Description
Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed which creates 2-dimensional potential well for electrons. The nanowire is treated as a quasi-1D system in this work. A self-consistent 2D Schrödinger-Poisson solver is designed which determines the subband energies and the corresponding wavefunctions of the confined system. Three scattering mechanisms: acoustic phonon scattering, polar optical phonon scattering and piezoelectric scattering are considered to account for the electron phonon interactions in the system. Overlap integrals and 1D scattering rate expressions are derived for all the mechanisms listed. A generic one-dimensional Monte Carlo solver is also developed. Steady state results from the 1D Monte Carlo solver are extracted to determine the low field mobility of the GaN nanowires.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017
Description
Gallium Nitride (GaN) based Current Aperture Vertical Electron Transistors (CAVETs) present many appealing qualities for applications in high power, high frequency devices. The wide bandgap, high carrier velocity of GaN make it ideal for withstanding high electric fields and supporting large currents. The vertical topology of the CAVET allows for more efficient die area utilization, breakdown scaling with the height of the device, and burying high electric fields in the bulk where they will not charge interface states that can lead to current collapse at higher frequency.
Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8].
From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.
Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8].
From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.
ContributorsWarren, Andrew (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019
Description
Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
ContributorsZhao, Shirong (Author) / Chowdhury, Srabanti (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2016
Description
This dissertation aims to study and understand the effect of nonlinear dynamics and quantum chaos in graphene, optomechanics, photonics and spintronics systems.
First, in graphene quantum dot systems, conductance fluctuations are investigated from the respects of Fano resonances and quantum chaos. The conventional semi-classical theory of quantum chaotic scattering used in this field depends on an invariant classical phase-space structure. I show that for systems without an invariant classical phase-space structure, the quantum pointer states can still be used to explain the conductance fluctuations. Another finding is that the chaotic geometry is demonstrated to have similar effects as the disorders in transportations.
Second, in optomechanics systems, I find rich nonlinear dynamics. Using the semi-classical Langevin equations, I demonstrate a quasi-periodic motion is favorable for the quantum entanglement between the optical mode and mechanical mode. Then I use the quantum trajectory theory to provide a new resolution for the breakdown of the classical-quantum correspondences in the chaotic regions.
Third, I investigate the analogs of the electrical band structures and effects in the non-electrical systems. In the photonic systems, I use an array of waveguides to simulate the transport of the massive relativistic particle in a non-Hermitian scenario. A new form of Zitterbewegung is discovered as well as its analytical explanation. In mechanical systems, I use springs and mass points systems to achieve a three band degenerate band structure with a new pair of spatially separated edge states in the Dice lattice. A new semi-metal phase with the intrinsic valley-Hall effect is found.
At last, I investigate the nonlinear dynamics in the spintronics systems, in which the topological insulator couples with a magnetization. Rich nonlinear dynamics are discovered in this systems, especially the multi-stability states.
First, in graphene quantum dot systems, conductance fluctuations are investigated from the respects of Fano resonances and quantum chaos. The conventional semi-classical theory of quantum chaotic scattering used in this field depends on an invariant classical phase-space structure. I show that for systems without an invariant classical phase-space structure, the quantum pointer states can still be used to explain the conductance fluctuations. Another finding is that the chaotic geometry is demonstrated to have similar effects as the disorders in transportations.
Second, in optomechanics systems, I find rich nonlinear dynamics. Using the semi-classical Langevin equations, I demonstrate a quasi-periodic motion is favorable for the quantum entanglement between the optical mode and mechanical mode. Then I use the quantum trajectory theory to provide a new resolution for the breakdown of the classical-quantum correspondences in the chaotic regions.
Third, I investigate the analogs of the electrical band structures and effects in the non-electrical systems. In the photonic systems, I use an array of waveguides to simulate the transport of the massive relativistic particle in a non-Hermitian scenario. A new form of Zitterbewegung is discovered as well as its analytical explanation. In mechanical systems, I use springs and mass points systems to achieve a three band degenerate band structure with a new pair of spatially separated edge states in the Dice lattice. A new semi-metal phase with the intrinsic valley-Hall effect is found.
At last, I investigate the nonlinear dynamics in the spintronics systems, in which the topological insulator couples with a magnetization. Rich nonlinear dynamics are discovered in this systems, especially the multi-stability states.
ContributorsWang, Guanglei (Author) / Lai, Ying-Cheng (Thesis advisor) / Vasileska, Dragica (Committee member) / Ning, Cun-Zheng (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017
Description
Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
In this work, we present the study of ZnTe nanowires (NWs) that are synthesized
through a simple vapor-liquid-solid (VLS) method. By controlling the presence or
the absence of Au catalysts and controlling the growth parameters such as growth
temperature, various growth morphologies of ZnTe, such as thin films and nanowires
can be obtained. The characterization of the ZnTe nanostructures and films was
performed using scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy
(EDX), high- resolution transmission electron microscope (HRTEM), X-ray
diffraction (XRD), photoluminescence (PL), Raman spectroscopy and light scattering
measurement. After confirming the crystal purity of ZnTe, two-terminal diodes and
three-terminal transistors were fabricated with both nanowire and planar nano-sheet
configurations, in order to correlate the nanostructure geometry to device performance
including field effect mobility, Schottky barrier characteristics, and turn-on
characteristics. Additionally, optoelectronic properties such as photoconductive gain
and responsivity were compared against morphology. Finally, ZnTe was explored in
conjunction with ZnO in order to form type-II band alignment in a core-shell nanostructure.
Various characterization techniques including scanning electron microscopy,
energy-dispersive X-ray spectroscopy , x-ray diffraction, Raman spectroscopy, UV-vis
reflectance spectra and photoluminescence were used to investigate the modification
of ZnO/ZnTe core/shell structure properties. In PL spectra, the eliminated PL intensity
of ZnO wires is primarily attributed to the efficient charge transfer process
occurring between ZnO and ZnTe, due to the band alignment in the core/shell structure. Moreover, the result of UV-vis reflectance spectra corresponds to the band
gap energy of ZnO and ZnTe, respectively, which confirm that the sample consists of
ZnO/ZnTe core/shell structure of good quality.
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
In this work, we present the study of ZnTe nanowires (NWs) that are synthesized
through a simple vapor-liquid-solid (VLS) method. By controlling the presence or
the absence of Au catalysts and controlling the growth parameters such as growth
temperature, various growth morphologies of ZnTe, such as thin films and nanowires
can be obtained. The characterization of the ZnTe nanostructures and films was
performed using scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy
(EDX), high- resolution transmission electron microscope (HRTEM), X-ray
diffraction (XRD), photoluminescence (PL), Raman spectroscopy and light scattering
measurement. After confirming the crystal purity of ZnTe, two-terminal diodes and
three-terminal transistors were fabricated with both nanowire and planar nano-sheet
configurations, in order to correlate the nanostructure geometry to device performance
including field effect mobility, Schottky barrier characteristics, and turn-on
characteristics. Additionally, optoelectronic properties such as photoconductive gain
and responsivity were compared against morphology. Finally, ZnTe was explored in
conjunction with ZnO in order to form type-II band alignment in a core-shell nanostructure.
Various characterization techniques including scanning electron microscopy,
energy-dispersive X-ray spectroscopy , x-ray diffraction, Raman spectroscopy, UV-vis
reflectance spectra and photoluminescence were used to investigate the modification
of ZnO/ZnTe core/shell structure properties. In PL spectra, the eliminated PL intensity
of ZnO wires is primarily attributed to the efficient charge transfer process
occurring between ZnO and ZnTe, due to the band alignment in the core/shell structure. Moreover, the result of UV-vis reflectance spectra corresponds to the band
gap energy of ZnO and ZnTe, respectively, which confirm that the sample consists of
ZnO/ZnTe core/shell structure of good quality.
ContributorsPeng, Jhih-hong (Author) / Yu, Hongbin (Thesis advisor) / Roedel, Ronald (Committee member) / Goryll, Michael (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017
Description
4H-SiC has been widely used in many applications. All of these benefit from its extremely high critical electric field and good electron mobility. For example, 4H-SiC possesses a critical field ten times higher than that of Si, which allows high-voltage blocking layers composed of 4H-SiC to be approximately a tenth the thickness of a comparable Si device. This, in turn, reduces the device on-resistance and power losses while maintaining the same high blocking capability.
Unfortunately, commercial TCAD tools like Sentaurus and Silvaco Atlas are based on the effective mass approximation, while most 4H-SiC devices are not operated under low electric field, so the parabolic-like band approximation does not hold anymore. Hence, to get more accurate and reliable simulation results, full-band analysis is needed. The first step in the development of a full-band device simulator is the calculation of the band structure. In this work, the empirical pseudopotential method (EPM) is adopted. The next task in the sequence is the calculation of the scattering rates. Acoustic, non-polar optical phonon, polar optical phonon and Coulomb scattering are considered. Coulomb scattering is treated in real space using the particle-particle-particle-mesh (P3M) approach. The third task is coupling the bulk full-band solver with a 3D Poisson equation solver to generate a full-band device simulator.
For proof-of-concept of the methodology adopted here, a 3D resistor is simulated first. From the resistor simulations, the low-field electron mobility dependence upon Coulomb scattering in 4H-SiC devices is extracted. The simulated mobility results agree very well with available experimental data. Next, a 3D VDMOS is simulated. The nature of the physical processes occurring in both steady-state and transient conditions are revealed for the two generations of 3D VDMOS devices being considered in the study.
Due to its comprehensive nature, the developed tool serves as a basis for future investigation of 4H-SiC power devices.
Unfortunately, commercial TCAD tools like Sentaurus and Silvaco Atlas are based on the effective mass approximation, while most 4H-SiC devices are not operated under low electric field, so the parabolic-like band approximation does not hold anymore. Hence, to get more accurate and reliable simulation results, full-band analysis is needed. The first step in the development of a full-band device simulator is the calculation of the band structure. In this work, the empirical pseudopotential method (EPM) is adopted. The next task in the sequence is the calculation of the scattering rates. Acoustic, non-polar optical phonon, polar optical phonon and Coulomb scattering are considered. Coulomb scattering is treated in real space using the particle-particle-particle-mesh (P3M) approach. The third task is coupling the bulk full-band solver with a 3D Poisson equation solver to generate a full-band device simulator.
For proof-of-concept of the methodology adopted here, a 3D resistor is simulated first. From the resistor simulations, the low-field electron mobility dependence upon Coulomb scattering in 4H-SiC devices is extracted. The simulated mobility results agree very well with available experimental data. Next, a 3D VDMOS is simulated. The nature of the physical processes occurring in both steady-state and transient conditions are revealed for the two generations of 3D VDMOS devices being considered in the study.
Due to its comprehensive nature, the developed tool serves as a basis for future investigation of 4H-SiC power devices.
ContributorsCheng, Chi-Yin (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Thesis advisor) / Ponce, Fernando (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2020
Description
The development of biosensing platforms not only has an immediate lifesaving effect but also has a significant socio-economic impact. In this dissertation, three very important biomarkers with immense importance were chosen for further investigation, reducing the technological gap and improving their sensing platform.Firstly, gold nanoparticles (AuNP) aggregation and sedimentation-based assays were developed for the sensitive, specific, and rapid detection of Ebola virus secreted glycoprotein (sGP)and severe acute respiratory syndrome coronavirus 2 (SARS-COV2) receptor-binding domain (RBD) antigens. An extensive study was done to develop a complete assay workflow from critical nanobody generation to optimization of AuNP size for rapid detection. A rapid portable electronic reader costing (<$5, <100 cm3), and digital data output was developed. Together with the developed workflow, this portable electronic reader showed a high sensitivity (limit of detection of ~10 pg/mL, or 0.13 pM for sGP and ~40 pg/mL, or ~1.3 pM for RBD in diluted human serum), a high specificity, a large dynamic range (~7 logs), and accelerated readout within minutes. Secondly, A general framework was established for small molecule detection using plasmonic metal nanoparticles through wide-ranging investigation and optimization of assay parameters with demonstrated detection of Cannabidiol (CBD). An unfiltered assay suitable for personalized dosage monitoring was developed and demonstrated. A portable electronic reader demonstrated optoelectronic detection of CBD with a limit of detection (LOD) of <100 pM in urine and saliva, a large dynamic range (5 logs), and a high specificity that differentiates closely related Tetrahydrocannabinol (THC). Finally, with careful biomolecular design and expansion of the portable reader to a dual-wavelength detector the classification of antibodies based on their affinity to SARS-COV2 RBD and their ability to neutralize the RBD from binding to the human Angiotensin-Converting Enzyme 2 (ACE2) was demonstrated with the capability to detect antibody concentration as low as 1 pM and observed neutralization starting as low as 10 pM with different viral load and variant. This portable, low-cost, and versatile readout system holds great promise for rapid, digital, and portable data collection in the field of biosensing.
ContributorsIkbal, Md Ashif (Author) / Wang, Chao (Thesis advisor) / Goryll, Michael (Committee member) / Zhao, Yuji (Committee member) / Wang, Shaopeng (Committee member) / Arizona State University (Publisher)
Created2022
Description
The availability of bulk gallium nitride (GaN) substrates has generated great interest in the development of vertical GaN-on-GaN power devices. The vertical devices made of GaN have not been able to reach their true potential due to material growth related issues. Power devices typically have patterned p-n, and p-i junctions in lateral, and vertical direction relative to the substrate. Identifying the variations from the intended layer design is crucial for failure analysis of the devices. A most commonly used dopant profiling technique, secondary ion mass spectroscopy (SIMS), does not have the spatial resolution to identify the dopant distribution in patterned devices. The possibility of quantitative dopant profiling at a sub-micron scale for GaN in a scanning electron microscope (SEM) is discussed. The total electron yield in an SEM is shown to be a function of dopant concentration which can potentially be used for quantitative dopant profiling.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
ContributorsAlugubelli, Shanthan Reddy (Author) / Ponce, Fernando A. (Thesis advisor) / McCartney, Martha (Committee member) / Newman, Nathan (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019
Description
The emergence of perovskite and practical efficiency limit to silicon solar cells has opened door for perovskite and silicon based tandems with the possibility to achieve >30% efficiency. However, there are material and optical challenges that have to be overcome for the success of these tandems. In this work the aim is to understand and improve the light management issues in silicon and perovskite based tandems through comprehensive optical modeling and simulation of current state of the art tandems and by characterizing the optical properties of new top and bottom cell materials. Moreover, to propose practical solutions to mitigate some of the optical losses.
Highest efficiency single-junction silicon and bottom silicon sub-cell in silicon based tandems employ monocrystalline silicon wafer textured with random pyramids. Therefore, the light trapping performance of random pyramids in silicon solar cells is established. An accurate three-dimensional height map of random pyramids is captured and ray-traced to record the angular distribution of light inside the wafer which shows random pyramids trap light as well as Lambertian scatterer.
Second, the problem of front-surface reflectance common to all modules, planar solar cells and to silicon and perovskite based tandems is dealt. A nano-imprint lithography procedure is developed to fabricate polydimethylsiloxane (PDMS) scattering layer carrying random pyramids that effectively reduces the reflectance. Results show it increased the efficiency of planar semi-transparent perovskite solar cell by 10.6% relative.
Next a detailed assessment of light-management in practical two-terminal perovskite/silicon and perovskite/perovskite tandems is performed to quantify reflectance, parasitic and light-trapping losses. For this first a methodology based on spectroscopic ellipsometry is developed to characterize new absorber materials employed in tandems. Characterized materials include wide-bandgap (CH3NH3I3, CsyFA1-yPb(BrxI1-x)3) and low-bandgap (Cs0.05FA0.5MA0.45(Pb0.5Sn0.5)I3) perovskites and wide-bandgap CdTe alloys (CdZnSeTe). Using this information rigorous optical modeling of two-terminal perovskite/silicon and perovskite/perovskite tandems with varying light management schemes is performed. Thus providing a guideline for further development.
Highest efficiency single-junction silicon and bottom silicon sub-cell in silicon based tandems employ monocrystalline silicon wafer textured with random pyramids. Therefore, the light trapping performance of random pyramids in silicon solar cells is established. An accurate three-dimensional height map of random pyramids is captured and ray-traced to record the angular distribution of light inside the wafer which shows random pyramids trap light as well as Lambertian scatterer.
Second, the problem of front-surface reflectance common to all modules, planar solar cells and to silicon and perovskite based tandems is dealt. A nano-imprint lithography procedure is developed to fabricate polydimethylsiloxane (PDMS) scattering layer carrying random pyramids that effectively reduces the reflectance. Results show it increased the efficiency of planar semi-transparent perovskite solar cell by 10.6% relative.
Next a detailed assessment of light-management in practical two-terminal perovskite/silicon and perovskite/perovskite tandems is performed to quantify reflectance, parasitic and light-trapping losses. For this first a methodology based on spectroscopic ellipsometry is developed to characterize new absorber materials employed in tandems. Characterized materials include wide-bandgap (CH3NH3I3, CsyFA1-yPb(BrxI1-x)3) and low-bandgap (Cs0.05FA0.5MA0.45(Pb0.5Sn0.5)I3) perovskites and wide-bandgap CdTe alloys (CdZnSeTe). Using this information rigorous optical modeling of two-terminal perovskite/silicon and perovskite/perovskite tandems with varying light management schemes is performed. Thus providing a guideline for further development.
ContributorsManzoor, Salman (Author) / Holman, Zachary C (Thesis advisor) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019
Description
Advanced and mature computer simulation methods exist in fluid dynamics, elec-
tromagnetics, semiconductors, chemical transport, and even chemical and material
electronic structure. However, few general or accurate methods have been developed
for quantum photonic devices. Here, a novel approach utilizing phase-space quantum
mechanics is developed to model photon transport in ring resonators, a form of en-
tangled pair source. The key features the model needs to illustrate are the emergence
of non-classicality and entanglement between photons due to nonlinear effects in the
ring. The quantum trajectory method is subsequently demonstrated on a sequence
of elementary models and multiple aspects of the ring resonator itself.
tromagnetics, semiconductors, chemical transport, and even chemical and material
electronic structure. However, few general or accurate methods have been developed
for quantum photonic devices. Here, a novel approach utilizing phase-space quantum
mechanics is developed to model photon transport in ring resonators, a form of en-
tangled pair source. The key features the model needs to illustrate are the emergence
of non-classicality and entanglement between photons due to nonlinear effects in the
ring. The quantum trajectory method is subsequently demonstrated on a sequence
of elementary models and multiple aspects of the ring resonator itself.
ContributorsWelland, Ian Matthew (Author) / Ferry, David K. (Thesis advisor) / Goodnick, Stephen (Thesis advisor) / Zhao, Yuji (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2020