ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 17
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- All Subjects: Electrical Engineering
- Creators: Barnaby, Hugh J
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Lateral and vertical device configurations sense the radiation-induced migration of Ag+ ions in germanium selenide glasses via changes in electrical resistance between electrodes on the ChG. Before irradiation, these devices exhibit a high-resistance `OFF-state' (in the order of 10E12) but following irradiation, with either 60-Co gamma-rays or UV light, their resistance drops to a low-resistance `ON-state' (around 10E3). Lateral devices have exhibited cyclical recovery with room temperature annealing of the Ag doped ChG, which suggests potential uses in reusable radiation sensor applications. The feasibility of producing inexpensive flexible radiation sensors has been demonstrated by studying the effects of mechanical strain and temperature stress on sensors formed on flexible polymer substrate. The mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG have been modeled using a finite element device simulator, ATLAS. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for Ag species in the chalcogenide film. Metal-doped ChGs are solid electrolytes that have both ionic and electronic conductivity. The ChG based Programmable Metallization Cell (PMC) is a technology platform that offers electric field dependent resistance switching mechanisms by formation and dissolution of nano sized conductive filaments in a ChG solid electrolyte between oxidizable and inert electrodes. This study identifies silver anode agglomeration in PMC devices following large radiation dose exposure and considers device failure mechanisms via electrical and material characterization. The results demonstrate that by changing device structural parameters, silver agglomeration in PMC devices can be suppressed and reliable resistance switching may be maintained for extremely high doses ranging from 4 Mrad(GeSe) to more than 10 Mrad (ChG).
ContributorsDandamudi, Pradeep (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh J (Committee member) / Holbert, Keith E. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Advances in software and applications continue to demand advances in memory. The ideal memory would be non-volatile and have maximal capacity, speed, retention time, endurance, and radiation hardness while also having minimal physical size, energy usage, and cost. The programmable metallization cell (PMC) is an emerging memory technology that is likely to surpass flash memory in all the listed ideal memory characteristics. A comprehensive physics-based model is needed to fully understand PMC operation and aid in design optimization. With the intent of advancing the PMC modeling effort, this thesis presents two simulation models for the PMC. The first model is a finite element model based on Silvaco Atlas finite element analysis software. Limitations of the software are identified that make this model inconsistent with the operating mechanism of the PMC. The second model is a physics-based numerical model developed for the PMC. This model is successful in matching data measured from a chalcogenide glass PMC designed and manufactured at ASU. Matched operating characteristics observable in the current and resistance vs. voltage data include the OFF/ON resistances and write/erase and electrodeposition voltage thresholds. Multilevel programming is also explained and demonstrated with the numerical model. The numerical model has already proven useful by revealing some information presented about the operation and characteristics of the PMC.
ContributorsOleksy, David Ryan (Author) / Barnaby, Hugh J (Thesis advisor) / Kozicki, Michael N (Committee member) / Edwards, Arthur H (Committee member) / Arizona State University (Publisher)
Created2013
Description
Low Power, High Speed Analog to Digital Converters continues to remain one of the major building blocks for modern communication systems. Due to continuing trend of the aggressive scaling of the MOS devices, the susceptibility of most of the deep-sub micron CMOS technologies to the ionizing radiation has decreased over the period of time. When electronic circuits fabricated in these CMOS technologies are exposed to ionizing radiations, considerable change in the performance of circuits can be seen over a period of time. The change in the performance can be quantified in terms of decreasing linearity of the circuit which directly relates to the resolution of the circuit. Analog to Digital Converter is one of the most critical blocks of any electronic circuitry sent to space. The degradation in the performance of an Analog to Digital Converter due to radiation effects can jeopardize many research programs related to space. These radiation effects can completely hamper the working of a circuit. This thesis discusses the effects of Ionizing radiation on an 11 bit 325 MSPS pipeline ADC. The ADC is exposed to different doses of radiation and performance is compared.
ContributorsVashisth, Siddharth (Author) / Barnaby, Hugh J (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Mikkola, Esko (Committee member) / Arizona State University (Publisher)
Created2013
Description
Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring. The demands of space exploration require a special class of microprocessors called radiation hardened microprocessors which are less susceptible to radiation present outside the earth's atmosphere, in other words their functioning is not disrupted even in presence of disruptive radiation. The presence of these particles forces the designers to come up with design techniques at circuit and chip levels to alleviate the errors which can be encountered in the functioning of microprocessors. Microprocessor evolution has been very rapid in terms of performance but the same cannot be said about its rad-hard counterpart. With the total data processing capability overall increasing rapidly, the clear lack of performance of the processors manifests as a bottleneck in any processing system. To design high performance rad-hard microprocessors designers have to overcome difficult design problems at various design stages i.e. Architecture, Synthesis, Floorplanning, Optimization, routing and analysis all the while maintaining circuit radiation hardness. The reference design `HERMES' is targeted at 90nm IBM G process and is expected to reach 500Mhz which is twice as fast any processor currently available. Chapter 1 talks about the mechanisms of radiation effects which cause upsets and degradation to the functioning of digital circuits. Chapter 2 gives a brief description of the components which are used in the design and are part of the consistent efforts at ASUVLSI lab culminating in this chip level implementation of the design. Chapter 3 explains the basic digital design ASIC flow and the changes made to it leading to a rad-hard specific ASIC flow used in implementing this chip. Chapter 4 talks about the triple mode redundant (TMR) specific flow which is used in the block implementation, delineating the challenges faced and the solutions proposed to make the flow work. Chapter 5 explains the challenges faced and solutions arrived at while using the top-level flow described in chapter 3. Chapter 6 puts together the results and analyzes the design in terms of basic integrated circuit design constraints.
ContributorsRamamurthy, Chandarasekaran (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh J (Committee member) / Mayhew, David (Committee member) / Arizona State University (Publisher)
Created2013
Description
Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these devices to be exposed to ionizing radiation during various medical therapeutic and diagnostic activities while implanted. This commands that these devices remain fully operational during, and long after, radiation exposure. Many implantable medical devices employ standard commercial complementary metal-oxide-semiconductor (CMOS) processes for integrated circuit (IC) development, which have been shown to degrade with radiation exposure. This necessitates that device manufacturers study the effects of ionizing radiation on their products, and work to mitigate those effects to maintain a high standard of reliability. Mitigation can be completed through targeted radiation hardening by design (RHBD) techniques as not to infringe on the device operational specifications. This thesis details a complete radiation analysis methodology that can be implemented to examine the effects of ionizing radiation on an IC as part of RHBD efforts. The methodology is put into practice to determine the failure mechanism in a charge pump circuit, common in many of today's implantable pacemaker designs, as a case study. Charge pump irradiation data shows a reduction of circuit output voltage with applied dose. Through testing of individual test devices, the response is identified as parasitic inter-device leakage caused by trapped oxide charge buildup in the isolation oxides. A library of compact models is generated to represent isolation oxide parasitics based on test structure data along with 2-Dimensional structure simulation results. The original charge pump schematic is then back-annotated with transistors representative of the parasitic. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit, accounting for possible parasitic devices activated by radiation exposure. By selecting a compact model for the parasitics generated at a specific dose, the compete circuit response is then simulated at the defined dose. The reduction of circuit output voltage with dose is then re-created in a radiation-enabled simulation validating the analysis methodology.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh J (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2010
Description
Resistive random-access memory (RRAM) or memristor, is an emerging technology used in neuromorphic computing to exceed the traditional von Neumann obstacle by merging the processing and memory units. Two-dimensional (2D) materials with non-volatile switching behavior can be used as the switching layer of RRAMs, exhibiting superior behavior compared to conventional oxide-based RRAMs. The use of 2D materials allows scaling the resistive switching layer thickness to sub-nanometer dimensions enabling devices to operate with low switching voltages and high programming speeds, offering large improvements in efficiency and performance as well as ultra-dense integration. This dissertation presents an extensive study of linear and logistic regression algorithms implemented with 1-transistor-1-resistor (1T1R) memristor crossbars arrays. For this task, a simulation platform is used that wraps circuit-level simulations of 1T1R crossbars and physics-based model of RRAM to elucidate the impact of device variability on algorithm accuracy, convergence rate, and precision. Moreover, a smart pulsing strategy is proposed for the practical implementation of synaptic weight updates that can accelerate training in real crossbar architectures.
Next, this dissertation reports on the hardware implementation of analog dot-product operation on arrays of 2D hexagonal boron nitride (h-BN) memristors. This extends beyond previous work that studied isolated device characteristics towards the application of analog neural network accelerators based on 2D memristor arrays. The wafer-level fabrication of the memristor arrays is enabled by large-area transfer of CVD-grown few-layer h-BN films. The dot-product operation shows excellent linearity and repeatability, with low read energy consumption, with minimal error and deviation over various measurement cycles. Moreover, the successful implementation of a stochastic linear and logistic regression algorithm in 2D h-BN memristor hardware is presented for the classification of noisy images. Additionally, the electrical performance of novel 2D h-BN memristor for SNN applications is extensively investigated. Then, using the experimental behavior of the h-BN memristor as the artificial synapse, an unsupervised spiking neural network (SNN) is simulated for the image classification task. A novel and simple Spike-Timing-Dependent-Plasticity (STDP)-based dropout technique is presented to enhance the recognition task of the h-BN memristor-based SNN.
ContributorsAfshari, Sahra (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Barnaby, Hugh J (Committee member) / Seo, Jae-Sun (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2023
Description
Linear bipolar circuits, designed with bipolar junction transistors (BJTs), are particularly vulnerable to the effects of space radiation. These circuits, which are usually commercial off-the-shelf (COTS) components, typically exhibit Enhanced Low Dose Rate Sensitivity (ELDRS), which is characterized by the enhancement of degradation when parts are exposed to radiation at low dose rates as compared to high dose rates. This phenomenon poses significant problems for the qualification of bipolar parts for use in low dose rate environments, such as most Earth orbits. ELDRS in BJTs has been well-documented in ground-based experiments; however, the effects of low dose rate irradiation on bipolar transistors manufactured in an integrated linear process had never been characterized in space - until the ELDRS experiment was launched in June 2019. The ELDRS instrument measures changes in the active collector and base currents in 24 lateral PNP (LPNP) BJTs on eight packaged die (three BJTs per die). Sixteen of the 24 BJTs are gated, while eight are standard, un-gated LPNPs. Device Under Test (DUT) and measurement variables include oxide thickness, passivation layer, packaging conditions, and gate voltage. This thesis reports the results obtained after more than 20 months of space flight in a highly elliptical Earth orbit. These results demonstrate that this category of bipolar devices is susceptible to low dose rate exposures and therefore exhibits the ELDRS effect in an actual space environment. This thesis also assess the impact of packaging variables on radiation response and examines one of the major causes behind radiation degradation, interface traps. An understanding of radiation effects in real space environments is critical for future missions that use these low-cost COTS bipolar technologies, making these results highly relevant for the satellite community.
ContributorsBenedetto, Adalin (Author) / Barnaby, Hugh J (Thesis advisor) / Goodnick, Stephen (Committee member) / Sanchez, Ivan (Committee member) / Arizona State University (Publisher)
Created2023
Description
ABSTRACT
Programmable metallization cell (PMC) technology uses the mechanism of metal ion transport in solid electrolytes and electrochemical redox reactions to form metallic electrodeposits. When a positive bias is applied from anode to cathode, atoms at the anode are oxidized to ions and dissolve in the solid electrolyte. They travel to the cathode under the influence of an electric field, where they are reduced to form electrodeposits. These electrodeposits are filamentary in nature and grow in different patterns. Devices that make use of the principle of filament growth have applications in memory, RF switching, and hardware security.
The solid electrolyte under investigation is tungsten trioxide with copper deposited on top. For a standard PMC, these layers are heated in a convection oven to dope the electrolyte. Once the heating process is completed, electrodes are deposited on top of the electrolyte and biased to grow the filaments. What is investigated is the rate of dendritic growth to applied field on the PMC and the composition of the electrolyte. Also investigated are modified three-terminal PMC capacitance change devices. These devices have a buried sensing electrode that senses the increasing capacitance as the filaments grow and increase the upper electrode area.
The rate of dendritic growth in the tungsten trioxide and copper electrolyte of different chemistries and applied field to the PMC devices is the important parameter. The rate of dendritic growth is related to the change of capacitance. Through sensing the change in capacitance over time the modified PMC device will function as an odometer device that can be attached to chips. The attachment of these devices to chips, help in preventing illegal recycling of old chips by marking those chips as old. This will prevent would-be attackers from inserting modified chips in systems that will enable them to by-pass any software security precautions.
Programmable metallization cell (PMC) technology uses the mechanism of metal ion transport in solid electrolytes and electrochemical redox reactions to form metallic electrodeposits. When a positive bias is applied from anode to cathode, atoms at the anode are oxidized to ions and dissolve in the solid electrolyte. They travel to the cathode under the influence of an electric field, where they are reduced to form electrodeposits. These electrodeposits are filamentary in nature and grow in different patterns. Devices that make use of the principle of filament growth have applications in memory, RF switching, and hardware security.
The solid electrolyte under investigation is tungsten trioxide with copper deposited on top. For a standard PMC, these layers are heated in a convection oven to dope the electrolyte. Once the heating process is completed, electrodes are deposited on top of the electrolyte and biased to grow the filaments. What is investigated is the rate of dendritic growth to applied field on the PMC and the composition of the electrolyte. Also investigated are modified three-terminal PMC capacitance change devices. These devices have a buried sensing electrode that senses the increasing capacitance as the filaments grow and increase the upper electrode area.
The rate of dendritic growth in the tungsten trioxide and copper electrolyte of different chemistries and applied field to the PMC devices is the important parameter. The rate of dendritic growth is related to the change of capacitance. Through sensing the change in capacitance over time the modified PMC device will function as an odometer device that can be attached to chips. The attachment of these devices to chips, help in preventing illegal recycling of old chips by marking those chips as old. This will prevent would-be attackers from inserting modified chips in systems that will enable them to by-pass any software security precautions.
ContributorsKrishnan, Anand (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh J (Committee member) / Gonzalez-Velo, Yago (Committee member) / Arizona State University (Publisher)
Created2019