ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
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Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Great advances have been made in the construction of photovoltaic (PV) cells and modules, but array level management remains much the same as it has been in previous decades. Conventionally, the PV array is connected in a fixed topology which is not always appropriate in the presence of faults in the array, and varying weather conditions. With the introduction of smarter inverters and solar modules, the data obtained from the photovoltaic array can be used to dynamically modify the array topology and improve the array power output. This is beneficial especially when module mismatches such as shading, soiling and aging occur in the photovoltaic array. This research focuses on the topology optimization of PV arrays under shading conditions using measurements obtained from a PV array set-up. A scheme known as topology reconfiguration method is proposed to find the optimal array topology for a given weather condition and faulty module information. Various topologies such as the series-parallel (SP), the total cross-tied (TCT), the bridge link (BL) and their bypassed versions are considered. The topology reconfiguration method compares the efficiencies of the topologies, evaluates the percentage gain in the generated power that would be obtained by reconfiguration of the array and other factors to find the optimal topology. This method is employed for various possible shading patterns to predict the best topology. The results demonstrate the benefit of having an electrically reconfigurable array topology. The effects of irradiance and shading on the array performance are also studied. The simulations are carried out using a SPICE simulator. The simulation results are validated with the experimental data provided by the PACECO Company.
ContributorsBuddha, Santoshi Tejasri (Author) / Spanias, Andreas (Thesis advisor) / Tepedelenlioğlu, Cihan (Thesis advisor) / Zhang, Junshan (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this thesis, a Built-in Self Test (BiST) based testing solution is proposed to measure linear and non-linear impairments in the RF Transmitter path using analytical approach. Design issues and challenges with the impairments modeling and extraction in transmitter path are discussed. Transmitter is modeled for I/Q gain & phase mismatch, system non-linearity and DC offset using Matlab. BiST architecture includes a peak detector which includes a self mode mixer and 200 MHz filter. Self Mode mixing operation with filtering removes the high frequency signal contents and allows performing analysis on baseband frequency signals. Transmitter impairments were calculated using spectral analysis of output from the BiST circuitry using an analytical method. Matlab was used to simulate the system with known test impairments and impairment values from simulations were calculated based on system modeling in Mathematica. Simulated data is in good correlation with input test data along with very fast test time and high accuracy. The key contribution of the work is that, system impairments are extracted from transmitter response at baseband frequency using envelope detector hence eliminating the need of expensive high frequency ATE (Automated Test Equipments).
ContributorsGoyal, Nitin (Author) / Ozev, Sule (Thesis advisor) / Duman, Tolga (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
Fiber-Wireless (FiWi) network is the future network configuration that uses optical fiber as backbone transmission media and enables wireless network for the end user. Our study focuses on the Dynamic Bandwidth Allocation (DBA) algorithm for EPON upstream transmission. DBA, if designed properly, can dramatically improve the packet transmission delay and overall bandwidth utilization. With new DBA components coming out in research, a comprehensive study of DBA is conducted in this thesis, adding in Double Phase Polling coupled with novel Limited with Share credits Excess distribution method. By conducting a series simulation of DBAs using different components, we found out that grant sizing has the strongest impact on average packet delay and grant scheduling also has a significant impact on the average packet delay; grant scheduling has the strongest impact on the stability limit or maximum achievable channel utilization. Whereas the grant sizing only has a modest impact on the stability limit; the SPD grant scheduling policy in the Double Phase Polling scheduling framework coupled with Limited with Share credits Excess distribution grant sizing produced both the lowest average packet delay and the highest stability limit.
ContributorsZhao, Du (Author) / Reisslein, Martin (Thesis advisor) / McGarry, Michael (Committee member) / Fowler, John (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
There are many wireless communication and networking applications that require high transmission rates and reliability with only limited resources in terms of bandwidth, power, hardware complexity etc.. Real-time video streaming, gaming and social networking are a few such examples. Over the years many problems have been addressed towards the goal of enabling such applications; however, significant challenges still remain, particularly, in the context of multi-user communications. With the motivation of addressing some of these challenges, the main focus of this dissertation is the design and analysis of capacity approaching coding schemes for several (wireless) multi-user communication scenarios. Specifically, three main themes are studied: superposition coding over broadcast channels, practical coding for binary-input binary-output broadcast channels, and signalling schemes for two-way relay channels. As the first contribution, we propose an analytical tool that allows for reliable comparison of different practical codes and decoding strategies over degraded broadcast channels, even for very low error rates for which simulations are impractical. The second contribution deals with binary-input binary-output degraded broadcast channels, for which an optimal encoding scheme that achieves the capacity boundary is found, and a practical coding scheme is given by concatenation of an outer low density parity check code and an inner (non-linear) mapper that induces desired distribution of "one" in a codeword. The third contribution considers two-way relay channels where the information exchange between two nodes takes place in two transmission phases using a coding scheme called physical-layer network coding. At the relay, a near optimal decoding strategy is derived using a list decoding algorithm, and an approximation is obtained by a joint decoding approach. For the latter scheme, an analytical approximation of the word error rate based on a union bounding technique is computed under the assumption that linear codes are employed at the two nodes exchanging data. Further, when the wireless channel is frequency selective, two decoding strategies at the relay are developed, namely, a near optimal decoding scheme implemented using list decoding, and a reduced complexity detection/decoding scheme utilizing a linear minimum mean squared error based detector followed by a network coded sequence decoder.
ContributorsBhat, Uttam (Author) / Duman, Tolga M. (Thesis advisor) / Tepedelenlioğlu, Cihan (Committee member) / Li, Baoxin (Committee member) / Zhang, Junshan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the longer-wavelength active region is a critical element in realizing dual-wavelength laser output. The modeling predicts lower laser thresholds for the second and third generation designs; however, the experimental results of the second and third generation devices confirm challenges related to the epitaxial growth of the structures in eventually demonstrating dual-wavelength laser output.
ContributorsGreen, Benjamin C (Author) / Zhang, Yong-Hang (Thesis advisor) / Ning, Cun-Zheng (Committee member) / Tao, Nongjian (Committee member) / Roedel, Ronald J (Committee member) / Arizona State University (Publisher)
Created2011
Description
The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.
ContributorsGuerra, Diego (Author) / Saraniti, Marco (Thesis advisor) / Ferry, David K. (Committee member) / Goodnick, Stephen M (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2011
Description
This study was designed to produce a comprehensive flora of Usery Mountain Regional Park and Pass Mountain of the Tonto National Forest. A total of 168 vascular plant species representing 46 families and 127 genera were collected or documented at this study area. Sixteen species were not native to the flora of Arizona and represent 9.5% of the flora. Nevertheless, the study area does not appear to be significantly damaged or degraded in spite of its historical and current land use. The location and types of invasive species recorded in this study will assist with implementing preventative measures to prevent further spreading of certain species. The complete list of all vascular species recorded in this study will provide a valuable tool for land management decisions and future restoration projects that may occur at this area or similar sites and invasive species control. The distribution of the saguaro (Carnegiea gigantea) population on Pass Mountain was documented through the measurement of saguaros by random sampling. ArcGIS was used to generate 50 random points for sampling the saguaro population. Analysis to determine saguaro habitat preferences based on the parameters of aspect, slope and elevation was conducted through ArcGIS. The saguaro population of Pass Mountain significantly favored the southern aspects with the highest concentration occurring in the southwest aspects at an average density of 42.66 saguaros per hectare. The large numbers of saguaros recorded in the younger size classes suggests a growing populations.
ContributorsMarshall, Laura Lee (Author) / Steele, Kelly P (Thesis advisor) / Miller, William H. (Committee member) / Alford, Eddie J (Committee member) / Arizona State University (Publisher)
Created2011