ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Filtering by
- All Subjects: Device Physics
- Creators: Goryll, Michael
It will be shown that positive charge trapping is a dominant process when thick oxides are stressed through the ramped voltage test (RVT). Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields.
Next, two novel techniques will be presented for studying the carrier lifetime in MOS Capacitor devices. It will be shown that the deep-level transient spectroscopy (DLTS) can be applied to MOS test structures as a swift mean for screening the generation lifetime. Recombination lifetime will also be addressed by introducing the optically-excited MOS technique as a promising tool.
The last part of this work is devoted to the reverse recovery behavior of the body diode of power MOSFETs. The correct interpretation of the LDMOS reverse recovery is challenging and requires special attention. A simple approach will be presented to extract meaningful lifetime values from the reverse recovery of LDMOS body-diodes exploiting their gate voltage and the magnitude of the reverse bias.