Matching Items (21)
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Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for

Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
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Description
ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms

ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree approximation. The wavefunctions, subband energies, and 2D scattering rates are updated periodically by solving a series of 1D Schrödinger wave equations (SWE) over the real-space domain of the device at fixed time intervals. The electrostatic potential is updated by periodically solving the 3D Poisson equation. Spin-polarized transport is modeled via a spin density-matrix formalism that accounts for D'yakanov-Perel (DP) scattering. Also, the code allows for the easy inclusion of additional scattering mechanisms and structural modifications to devices. As an application of the simulator, the current voltage characteristics of an InGaAs/InAlAs HEMT are simulated, corresponding to nanoscale III-V HEMTs currently being fabricated by Intel Corporation. The comparative effects of various scattering parameters, material properties and structural attributes are investigated and compared with experiments where reasonable agreement is obtained. The spatial evolution of spin-polarized carriers in prototypical Spin Field Effect Transistor (SpinFET) devices is then simulated. Studies of the spin coherence times in quasi-2D structures is first investigated and compared to experimental results. It is found that the simulated spin coherence times for GaAs structures are in reasonable agreement with experiment. The SpinFET structure studied is a scaled-down version of the InGaAs/InAlAs HEMT discussed in this work, in which spin-polarized carriers are injected at the source, and the coherence length is studied as a function of gate voltage via the Rashba effect.
ContributorsTierney, Brian David (Author) / Goodnick, Stephen (Thesis advisor) / Ferry, David (Committee member) / Akis, Richard (Committee member) / Saraniti, Marco (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
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Description
It is the intent of this research to determine the feasibility of utilizing industrial byproducts in cementitious systems in lieu of Portland Cement to reduce global CO2 emissions. Class C and Class F Fly Ash (CFA and FFA, respectively) derived from industrial coal combustion were selected as the replacement materials

It is the intent of this research to determine the feasibility of utilizing industrial byproducts in cementitious systems in lieu of Portland Cement to reduce global CO2 emissions. Class C and Class F Fly Ash (CFA and FFA, respectively) derived from industrial coal combustion were selected as the replacement materials for this study. Sodium sulfate and calcium oxide were used as activators. In Part 1 of this study, focus was placed on high volume replacement of OPC using sodium sulfate as the activator. Despite improvements in heat generation for both CFA and FFA systems in the presence of sulfate, sodium sulfate was found to have adverse effects on the compressive strength of CFA mortars. In the CFA mixes, strength improved significantly with sulfate addition, but began to decrease in strength around 14 days due to expansive ettringite formation. Conversely, the addition of sulfate led to improved strength for FFA mixes such that the 28 day strength was comparable to that of the CFA mixes with no observable strength loss. Maximum compressive strengths achieved for the high volume replacement mixes was around 40 MPa, which is considerably lower than the baseline OPC mix used for comparison. In Part 2 of the study, temperature dependency and calcium oxide addition were studied for sodium sulfate activated systems composed of 100% Class F fly ash. In the presence of sulfate, added calcium increased reactivity and compressive strength at early ages, particularly at elevated temperatures. It is believed that sulfate and calcium react with alumina from fly ash to form ettringite, while heat overcomes the activation energy barrier of fly ash. The greatest strengths were obtained for mixes containing the maximum allowed quantity of calcium oxide (5%) and sodium sulfate (3%), and were around 12 MPa. This is a very low compressive strength relative to OPC and would therefore be an inadequate substitute for OPC needs.
Created2014-05
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Description
Graphene, a one atomic thick planar sheet of carbon atoms, has a zero gap band structure with a linear dispersion relation. This unique property makes graphene a favorite for physicists and engineers, who are trying to understand the mechanism of charge transport in graphene and using it as channel material

Graphene, a one atomic thick planar sheet of carbon atoms, has a zero gap band structure with a linear dispersion relation. This unique property makes graphene a favorite for physicists and engineers, who are trying to understand the mechanism of charge transport in graphene and using it as channel material for field effect transistor (FET) beyond silicon. Therefore, an in-depth exploring of these electrical properties of graphene is urgent, which is the purpose of this dissertation. In this dissertation, the charge transport and quantum capacitance of graphene were studied. Firstly, the transport properties of back-gated graphene transistor covering by high dielectric medium were systematically studied. The gate efficiency increased by up to two orders of magnitude in the presence of a high top dielectric medium, but the mobility did not change significantly. The results strongly suggested that the previously reported top dielectric medium-induced charge transport properties of graphene FETs were possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility. Secondly, a direct measurement of quantum capacitance of graphene was performed. The quantum capacitance displayed a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. The findings - which were not predicted by theory for ideal graphene - suggested that scattering from charged impurities also influences the quantum capacitance. The capacitances in aqueous solutions at different ionic concentrations were also measured, which strongly suggested that the longstanding puzzle about the interfacial capacitance in carbon-based electrodes had a quantum origin. Finally, the transport and quantum capacitance of epitaxial graphene were studied simultaneously, the quantum capacitance of epitaxial graphene was extracted, which was similar to that of exfoliated graphene near the Dirac Point, but exhibited a large sub-linear behavior at high carrier density. The self-consistent theory was found to provide a reasonable description of the transport data of the epitaxial graphene device, but a more complete theory was needed to explain both the transport and quantum capacitance data.
ContributorsXia, Jilin (Author) / Tao, N.J. (Thesis advisor) / Ferry, David (Committee member) / Thornton, Trevor (Committee member) / Tsui, Raymond (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2010
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Description
Sustainable production of microalgae for biofuel requires efficient phosphorus (P) utilization, which is a limited resource and vital for global food security. This research tracks the fate of P through biofuel production and investigates P recovery from the biomass using the cyanobacterium Synechocystis sp. PCC 6803. Our results show that

Sustainable production of microalgae for biofuel requires efficient phosphorus (P) utilization, which is a limited resource and vital for global food security. This research tracks the fate of P through biofuel production and investigates P recovery from the biomass using the cyanobacterium Synechocystis sp. PCC 6803. Our results show that Synechocystis contained 1.4% P dry weight. After crude lipids were extracted (e.g., for biofuel processing), 92% of the intracellular P remained in the residual biomass, indicating phospholipids comprised only a small percentage of cellular P. We estimate a majority of the P is primarily associated with nucleic acids. Advanced oxidation using hydrogen peroxide and microwave heating released 92% of the cellular P into orthophosphate. We then recovered the orthophosphate from the digestion matrix using two different types of anion exchange resins. One resin impregnated with iron nanoparticles adsorbed 98% of the influent P through 20 bed volumes, but only released 23% during regeneration. A strong-base anion exchange resin adsorbed 87% of the influent P through 20 bed volumes and released 50% of it upon regeneration. This recovered P subsequently supported growth of Synechocystis. This proof-of-concept recovery process reduced P demand of biofuel microalgae by 54%.
Created2015-03-01
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Description
We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these

We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.
Contributorsda Cunha, C. R. (Author) / Mineharu, M. (Author) / Matsunaga, M. (Author) / Matsumoto, N. (Author) / Chuang, C. (Author) / Ochiai, Y. (Author) / Kim, G.-H. (Author) / Watanabe, K. (Author) / Taniguchi, T. (Author) / Ferry, David (Author) / Aoki, N. (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School of Electrical, Computer and Energy Engineering (Contributor)
Created2016-09-09
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Description

Inhibition by ammonium at concentrations above 1000 mgN/L is known to harm the methanogenesis phase of anaerobic digestion. We anaerobically digested swine waste and achieved steady state COD-removal efficiency of around 52% with no fatty-acid or H[subscript 2] accumulation. As the anaerobic microbial community adapted to the gradual increase of total

Inhibition by ammonium at concentrations above 1000 mgN/L is known to harm the methanogenesis phase of anaerobic digestion. We anaerobically digested swine waste and achieved steady state COD-removal efficiency of around 52% with no fatty-acid or H[subscript 2] accumulation. As the anaerobic microbial community adapted to the gradual increase of total ammonia-N (NH[subscript 3]-N) from 890 ± 295 to 2040 ± 30 mg/L, the Bacterial and Archaeal communities became less diverse. Phylotypes most closely related to hydrogenotrophic Methanoculleus (36.4%) and Methanobrevibacter (11.6%), along with acetoclastic Methanosaeta (29.3%), became the most abundant Archaeal sequences during acclimation. This was accompanied by a sharp increase in the relative abundances of phylotypes most closely related to acetogens and fatty-acid producers (Clostridium, Coprococcus, and Sphaerochaeta) and syntrophic fatty-acid Bacteria (Syntrophomonas, Clostridium, Clostridiaceae species, and Cloacamonaceae species) that have metabolic capabilities for butyrate and propionate fermentation, as well as for reverse acetogenesis. Our results provide evidence countering a prevailing theory that acetoclastic methanogens are selectively inhibited when the total ammonia-N concentration is greater than ~1000 mgN/L. Instead, acetoclastic and hydrogenotrophic methanogens coexisted in the presence of total ammonia-N of ~2000 mgN/L by establishing syntrophic relationships with fatty-acid fermenters, as well as homoacetogens able to carry out forward and reverse acetogenesis.

Created2016-08-11
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Recent studies indicate the presence of nano-scale titanium dioxide (TiO[subscript 2]) as an additive in human foodstuffs, but a practical protocol to isolate and separate nano-fractions from soluble foodstuffs as a source of material remains elusive. As such, we developed a method for separating the nano and submicron fractions found

Recent studies indicate the presence of nano-scale titanium dioxide (TiO[subscript 2]) as an additive in human foodstuffs, but a practical protocol to isolate and separate nano-fractions from soluble foodstuffs as a source of material remains elusive. As such, we developed a method for separating the nano and submicron fractions found in commercial-grade TiO[subscript 2] (E171) and E171 extracted from soluble foodstuffs and pharmaceutical products (e.g., chewing gum, pain reliever, and allergy medicine). Primary particle analysis of commercial-grade E171 indicated that 54% of particles were nano-sized (i.e., < 100 nm). Isolation and primary particle analysis of five consumer goods intended to be ingested revealed differences in the percent of nano-sized particles from 32%‒58%. Separation and enrichment of nano- and submicron-sized particles from commercial-grade E171 and E171 isolated from foodstuffs and pharmaceuticals was accomplished using rate-zonal centrifugation. Commercial-grade E171 was separated into nano- and submicron-enriched fractions consisting of a nano:submicron fraction of approximately 0.45:1 and 3.2:1, respectively. E171 extracted from gum had nano:submicron fractions of 1.4:1 and 0.19:1 for nano- and submicron-enriched, respectively. We show a difference in particle adhesion to the cell surface, which was found to be dependent on particle size and epithelial orientation. Finally, we provide evidence that E171 particles are not immediately cytotoxic to the Caco-2 human intestinal epithelium model. These data suggest that this separation method is appropriate for studies interested in isolating the nano-sized particle fraction taken directly from consumer products, in order to study separately the effects of nano and submicron particles.
Created2016-10-31
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Description
The Physics and Chemistry of Surfaces and Interfaces conference has maintained a focus on the interfacial and surface properties of materials since its initiation in 1974. The conference continues to be a major force in this field, bringing together scientists from a variety of disciplines to focus upon the science

The Physics and Chemistry of Surfaces and Interfaces conference has maintained a focus on the interfacial and surface properties of materials since its initiation in 1974. The conference continues to be a major force in this field, bringing together scientists from a variety of disciplines to focus upon the science of interfaces and surfaces. Here, a historical view of the development of the conference and a discussion of some of the themes that have been focal points for many years are presented.
Created2013
Description
The purpose of this text is to research and specify inequities present within three South American cities; Medellin, Columbia, Mexico City, Mexico, and Rio de Janeiro, Brazil. This research then considers specific neighborhoods within these cities that have become underprivileged as a result of the inequities, and analyzes architectural insertions

The purpose of this text is to research and specify inequities present within three South American cities; Medellin, Columbia, Mexico City, Mexico, and Rio de Janeiro, Brazil. This research then considers specific neighborhoods within these cities that have become underprivileged as a result of the inequities, and analyzes architectural insertions that have been placed in these communities in hopes of balancing the inequities secluding the communities from the rest of the city. With the information gathered from the three case study cities, another city, Tijuana, Mexico, is examined and ascertained as to what type of inequities are present. Using the methodology implemented in the case studies, a specific architectural insertion is proposed in relation to the problems at hand, with the intent of balancing the inequalities present in an underprivilege neighborhood in Tijuana. Ultimately, the text strives to demonstrate the power of architectural insertions within a community, while highlighting the importance of the effects upon the daily lives of the inhabitants, as well as the dynamics within the community and greater city.
ContributorsBorie, Isabelle Ethelbah (Author) / Spellman, Catherine (Thesis director) / Vekstein, Claudio (Committee member) / Hejduk, Renata (Committee member) / The Design School (Contributor) / School of Sustainable Engineering and the Built Environment (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05