Matching Items (24)
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree approximation. The wavefunctions, subband energies, and 2D scattering rates are updated periodically by solving a series of 1D Schrödinger wave equations (SWE) over the real-space domain of the device at fixed time intervals. The electrostatic potential is updated by periodically solving the 3D Poisson equation. Spin-polarized transport is modeled via a spin density-matrix formalism that accounts for D'yakanov-Perel (DP) scattering. Also, the code allows for the easy inclusion of additional scattering mechanisms and structural modifications to devices. As an application of the simulator, the current voltage characteristics of an InGaAs/InAlAs HEMT are simulated, corresponding to nanoscale III-V HEMTs currently being fabricated by Intel Corporation. The comparative effects of various scattering parameters, material properties and structural attributes are investigated and compared with experiments where reasonable agreement is obtained. The spatial evolution of spin-polarized carriers in prototypical Spin Field Effect Transistor (SpinFET) devices is then simulated. Studies of the spin coherence times in quasi-2D structures is first investigated and compared to experimental results. It is found that the simulated spin coherence times for GaAs structures are in reasonable agreement with experiment. The SpinFET structure studied is a scaled-down version of the InGaAs/InAlAs HEMT discussed in this work, in which spin-polarized carriers are injected at the source, and the coherence length is studied as a function of gate voltage via the Rashba effect.
ContributorsTierney, Brian David (Author) / Goodnick, Stephen (Thesis advisor) / Ferry, David (Committee member) / Akis, Richard (Committee member) / Saraniti, Marco (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
Graphene, a one atomic thick planar sheet of carbon atoms, has a zero gap band structure with a linear dispersion relation. This unique property makes graphene a favorite for physicists and engineers, who are trying to understand the mechanism of charge transport in graphene and using it as channel material for field effect transistor (FET) beyond silicon. Therefore, an in-depth exploring of these electrical properties of graphene is urgent, which is the purpose of this dissertation. In this dissertation, the charge transport and quantum capacitance of graphene were studied. Firstly, the transport properties of back-gated graphene transistor covering by high dielectric medium were systematically studied. The gate efficiency increased by up to two orders of magnitude in the presence of a high top dielectric medium, but the mobility did not change significantly. The results strongly suggested that the previously reported top dielectric medium-induced charge transport properties of graphene FETs were possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility. Secondly, a direct measurement of quantum capacitance of graphene was performed. The quantum capacitance displayed a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. The findings - which were not predicted by theory for ideal graphene - suggested that scattering from charged impurities also influences the quantum capacitance. The capacitances in aqueous solutions at different ionic concentrations were also measured, which strongly suggested that the longstanding puzzle about the interfacial capacitance in carbon-based electrodes had a quantum origin. Finally, the transport and quantum capacitance of epitaxial graphene were studied simultaneously, the quantum capacitance of epitaxial graphene was extracted, which was similar to that of exfoliated graphene near the Dirac Point, but exhibited a large sub-linear behavior at high carrier density. The self-consistent theory was found to provide a reasonable description of the transport data of the epitaxial graphene device, but a more complete theory was needed to explain both the transport and quantum capacitance data.
ContributorsXia, Jilin (Author) / Tao, N.J. (Thesis advisor) / Ferry, David (Committee member) / Thornton, Trevor (Committee member) / Tsui, Raymond (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2010
Description
This paper presents a multiscale modeling approach to simulating the self-sensing behavior of a load sensitive smart polymer material. A statistical spring-bead based network model is developed to bridge the molecular dynamics simulations at the nanoscale and the finite element model at the macroscale. Parametric studies are conducted on the developed network model to investigate the effects of the thermoset crosslinking degree on the mechanical response of the self-sensing material. A comparison between experimental and simulation results shows that the multiscale framework is able to capture the global mechanical response with adequate accuracy and the network model is also capable of simulating the self-sensing phenomenon of the smart polymer. Finally, the molecular dynamics simulation and network model based simulation are implemented to evaluate damage initiation in the self-sensing material under monotonic loading.
ContributorsZhang, Jinjun (Author) / Koo, Bonsung (Author) / Liu, Yingtao (Author) / Zou, Jin (Author) / Chattopadhyay, Aditi (Author) / Dai, Lenore (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2015-08-01
Description
Wall-bounded turbulence manifests itself in a broad range of applications, not least of which in hydraulic systems. Here we briefly review the significant advances over the past few decades in the fundamental study of wall turbulence over smooth and rough surfaces, with an emphasis on coherent structures and their role at high Reynolds numbers. We attempt to relate these findings to parallel efforts in the hydraulic engineering community and discuss the implications of coherent structures in important hydraulic phenomena.
ContributorsAdrian, Ronald (Author) / Marusic, Ivan (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2012-09-10
Description
Vortex organization in the outer layer of a turbulent boundary layer overlying sparse, hemispherical roughness elements is explored with two-component particle-image velocimetry (PIV) in multiple streamwise-wall-normal measurement planes downstream and between elements. The presence of sparse roughness elements causes a shortening of the streamwise length scale in the near-wall region. These measurements confirm that vortex packets exist in the outer layer of flow over rough walls, but that their organization is altered, and this is interpreted as the underlying cause of the length-scale reduction. In particular, the elements shed vortices which appear to align in the near-wall region, but are distinct from the packets. Further, it is observed that ejection events triggered in the element wakes are more intense compared to the ejection events in smooth wall. We speculate that this may initiate a self-sustaining mechanism leading to the formation of hairpin packets as a much more effective instability compared to those typical of smooth-wall turbulence.
ContributorsGuala, Michael (Author) / Tomkins, Christopher D. (Author) / Christensen, Kenneth T. (Author) / Adrian, Ronald (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2012-09-09
Description
The dynamic importance of spanwise vorticity and vortex filaments has been assessed in steady, uniform open-channel flows by means of particle image velocimetry (PIV). By expressing the net force due to Reynolds’ turbulent shear stress, ∂(−[bar over uv]) ∂y, in terms of two velocity-vorticity correlations, [bar over vω[subscript z]] and [bar over wω[subscript y]], the results show that both spanwise vorticity [bar over ω[subscript z]] and the portion of it that is due to spanwise filaments make important contributions to the net force and hence the shape of the mean flow profile. Using the swirling strength to identify spanwise vortex filaments, it is found that they account for about 45% of [bar over vω[subscript z]], the remainder coming from non-filamentary spanwise vorticity, i.e. shear. The mechanism underlying this contribution is the movement of vortex filaments away from the wall. The contribution of spanwise vortex filaments to the Reynolds stress is small because they occupy a small fraction of the flow. The contribution of the induced motion of the spanwise vortex filaments is significant.
ContributorsChen, Qigang (Author) / Adrian, Ronald (Author) / Zhong, Qiang (Author) / Li, Danxun (Author) / Wang, Xingkui (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2013-11-30
Description
We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.
Contributorsda Cunha, C. R. (Author) / Mineharu, M. (Author) / Matsunaga, M. (Author) / Matsumoto, N. (Author) / Chuang, C. (Author) / Ochiai, Y. (Author) / Kim, G.-H. (Author) / Watanabe, K. (Author) / Taniguchi, T. (Author) / Ferry, David (Author) / Aoki, N. (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School of Electrical, Computer and Energy Engineering (Contributor)
Created2016-09-09
Description
Because metallic aircraft components are subject to a variety of in-service loading conditions, predicting their fatigue life has become a critical challenge. To address the failure mode mitigation of aircraft components and at the same time reduce the life-cycle costs of aerospace systems, a reliable prognostics framework is essential. In this paper, a hybrid prognosis model that accurately predicts the crack growth regime and the residual-useful-life estimate of aluminum components is developed. The methodology integrates physics-based modeling with a data-driven approach. Different types of loading conditions such as constant amplitude, random, and overload are investigated. The developed methodology is validated on an Al 2024-T351 lug joint under fatigue loading conditions. The results indicate that fusing the measured data and physics-based models improves the accuracy of prediction compared to a purely data-driven or physics-based approach.
ContributorsNeerukatti, Rajesh Kumar (Author) / Liu, Kuang C. (Author) / Kovvali, Narayan (Author) / Chattopadhyay, Aditi (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2014-04-01
Description
High phase order systems have been proposed at the early inception of power transmission engineering, but few direct applications have been made. High phase order transmission should be considered as an alternative in the case of high power density applications. In this article, an analysis of transposition of high phase order overhead transmission lines is presented and voltage unbalance in high phase order systems is considered. Definitions are presented for “fully transposed” and “roll transposed” along with advantages and disadvantages of each. A generalized voltage unbalance factor is introduced and utilized to determine the benefits of transposition. The generalized voltage unbalance factor is compared with three other possible unbalance factors to determine if the generalized voltage unbalance factor is an appropriate indication of unbalance. Exemplary results are presented for 6-phase and 12-phase designs. Conclusions show that the generalized voltage unbalance factor is a good indication of transmission line voltage unbalance and certain configurations may not need full rotation transposition to minimize the unbalance factor. The transposition analysis and voltage unbalance are considerations in the assessment of high phase order as a high power transmission alternative.
ContributorsPierre, Brian (Author) / Heydt, Gerald (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School for the Engineering of Matter, Transport and Energy (Contributor)
Created2014-11-18