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- All Subjects: Semiconductors
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
The financial feasibility of NextPotential's X-doped photocatalyst is uncertain, the outcome depends on how much the material cost becomes reduced due to mass production techniques. If carbon taxes continue on the current trend the photocatalyst is highly likely to become financially feasible. Without carbon taxes, it is still likely the photocatalyst will achieve economical feasibility. The land area required by the photocatalyst is a feasible size. The minimal environmental downsides are that more land will be used and water will be used, but both of these are minimal compared to the benefit of eliminating carbon emissions.
ContributorsMcmullan, Kyle Jonathan (Co-author) / Lahpai, Mun (Co-author) / Donnelly, Connor (Co-author) / Puzhaev, Boris (Co-author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2015-05
Description
Graphene has the ability to advance many common fields, including: membranes, composites and coatings, energy, and electronics. For membranes, graphene will be used as a filter for desalination plants which will reduce the cost of desalination and greatly increase water security in developing countries. For composites and coatings, graphene's strength, flexibility, and lightweight will be instrumental in producing the next generation of athletic wear and sports equipment. Graphene's use in energy comes from its theorized ability to charge a phone battery in seconds or an electric car in minutes. Finally, for electronics, graphene will be used to create faster transistors, flexible electronics, and fully integrated wearable technology.
ContributorsSiegel, Adam (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Materials Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
The semiconductor industry looks to constantly improve the efficiency of research and development in order to reduce costs and time to market. One such method was designed in order to decrease time spent inducing warpage in integrated circuits in an Intel research process. Intel's Atom product line seeks to compete with ARM architecture by entering the mobile devices CPU market. Due to the fundamental differences between the Atom's Bonnell architecture and the ARM architecture, the Intel Atom product line must utilize such improved research and development methods. Until power consumption is drastically lowered while maintaining processing speed, the Atom product line will not be able to effectively break into the mobile devices CPU market.
ContributorsLandseidel, Jack Adam (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Anwar, Shahriar (Committee member) / Barrett, The Honors College (Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Materials Science and Engineering Program (Contributor)
Created2013-05