Matching Items (83)
Description
Asteroids provide fundamental clues to the formation and evolution of planetesimals. Collisional models based on the depletion of the primordial main belt of asteroids predict 10–15 craters >400 km should have formed on Ceres, the largest object between Mars and Jupiter, over the last 4.55 Gyr. Likewise, an extrapolation from the asteroid Vesta would require at least 6–7 such basins. However, Ceres’ surface appears devoid of impact craters >∼280 km. Here, we show a significant depletion of cerean craters down to 100–150 km in diameter. The overall scarcity of recognizable large craters is incompatible with collisional models, even in the case of a late implantation of Ceres in the main belt, a possibility raised by the presence of ammoniated phyllosilicates. Our results indicate that a significant population of large craters has been obliterated, implying that long-wavelength topography viscously relaxed or that Ceres experienced protracted widespread resurfacing.
ContributorsMarchi, S. (Author) / Ermakov, A. I. (Author) / Raymond, C. A. (Author) / Fu, R. R. (Author) / O'Brien, D. P. (Author) / Bland, M. T. (Author) / Ammannito, E. (Author) / De Sanctis, M. C. (Author) / Bowling, T. (Author) / Schenk, P. (Author) / Scully, J. E. C. (Author) / Buczkowski, D. L. (Author) / Williams, David (Author) / Hiesinger, H. (Author) / Russell, C. T. (Author) / College of Liberal Arts and Sciences (Contributor)
Created2016-07-26
Description
The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs) have been proposed to exceed the Shockley-Queisser efficiency limit [1]. The introduction of an IB in the forbidden gap of host material generates two additional carrier transitions for sub-bandgap photon absorption, leading to increased photocurrent of IBSCs while simultaneously allowing an open-circuit voltage of the highest band gap. To realize a high efficiency IBSC, QD structures should have high crystal quality and optimized electronic properties. This dissertation focuses on the investigation and optimization of the structural and optical properties of InAs/GaAsSb QDs and the development of InAs/GaAsSb QD-based IBSCs.
In the present dissertation, the interband optical transition and carrier lifetime of InAs/GaAsSb QDs with different silicon delta-doping densities have been first studied by time-integrated and time-resolved photoluminescence (PL). It is found that an optimized silicon delta-doping density in the QDs enables to fill the QD electronic states with electrons for sub-bandgap photon absorption and to improve carrier lifetime of the QDs.
After that, the crystal quality and QD morphology of single- and multi-stack InAs/GaAsSb QDs with different Sb compositions have been investigated by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The TEM studies reveal that QD morphology of single-stack QDs is affected by Sb composition due to strain reducing effect of Sb incorporation. The XRD studies confirm that the increase of Sb composition increases the lattice mismatch between GaAs matrix and GaAsSb spacers, resulting in increase of the strain relaxation in GaAsSb of the multi-stack QDs. Furthermore, the increase of Sb composition causes a PL redshift and increases carrier lifetime of QDs.
Finally, the spacer layer thickness of multi-stack InAs/GaAsSb QDs is optimized for the growth of InAs/GaAsSb QD solar cells (QDSCs). The InAs/GaAsSb QDSCs with GaP strain compensating layer are grown and their device performances are characterized. The increase of GaP coverage is beneficial to improve the conversion efficiency of the QDSCs. However, the conversion efficiency is reduced when using a relatively large GaP coverage.
In the present dissertation, the interband optical transition and carrier lifetime of InAs/GaAsSb QDs with different silicon delta-doping densities have been first studied by time-integrated and time-resolved photoluminescence (PL). It is found that an optimized silicon delta-doping density in the QDs enables to fill the QD electronic states with electrons for sub-bandgap photon absorption and to improve carrier lifetime of the QDs.
After that, the crystal quality and QD morphology of single- and multi-stack InAs/GaAsSb QDs with different Sb compositions have been investigated by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The TEM studies reveal that QD morphology of single-stack QDs is affected by Sb composition due to strain reducing effect of Sb incorporation. The XRD studies confirm that the increase of Sb composition increases the lattice mismatch between GaAs matrix and GaAsSb spacers, resulting in increase of the strain relaxation in GaAsSb of the multi-stack QDs. Furthermore, the increase of Sb composition causes a PL redshift and increases carrier lifetime of QDs.
Finally, the spacer layer thickness of multi-stack InAs/GaAsSb QDs is optimized for the growth of InAs/GaAsSb QD solar cells (QDSCs). The InAs/GaAsSb QDSCs with GaP strain compensating layer are grown and their device performances are characterized. The increase of GaP coverage is beneficial to improve the conversion efficiency of the QDSCs. However, the conversion efficiency is reduced when using a relatively large GaP coverage.
ContributorsKim, Yeongho (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
Mammalian olfaction relies on active sniffing, which both shapes and is shaped by olfactory stimuli. Habituation to repeated exposure of an olfactory stimuli is believed to be mediated by decreased sniffing; however, this decrease may be reserved by exposure to novel odorants. Because of this, it may be possible to use sniffing itself as a measure of novelty, and thus as a measure of odorant similarity. Thus, I investigated the use of sniffing to measure habituation, cross-habituation, and odorant similarity. During habituation experiments, increases in sniff rate seen in response to odorant presentation decreased in magnitude between the first and second presentations, suggesting of habituation. Some of this reduction in sniff rate increases was revered by the presentation of a novel odorant in cross-habituations. However the effect sizes in cross-habituation experiments were low, and the variability high, forestalling the conclusion that sniffing accurately measured cross-habituation. I discuss improvements to the experimental protocol that may allow for cross-habituation to be more accurately measured using sniffing alone in future experiments.
ContributorsVigayavel, Nirmal (Author) / Smith, Brian (Thesis director) / Sanabria, Federico (Committee member) / Gerkin, Rick (Committee member) / Barrett, The Honors College (Contributor)
Created2015-12