Matching Items (173)
Description
The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great strides towards ultrascaled two-dimensional (2D) field-effect-transistors (FETs). The scaling issues facing silicon-based complementary metal-oxide-semiconductor (CMOS) technologies can be solved by 2D FETs, which show extraordinary potential.This dissertation provides a comprehensive experimental analysis relating to improvements in p-type metal-oxide-semiconductor (PMOS) FETs with few-layer WSe2 and high-κ metal gate (HKMG) stacks. Compared to this works improved methods, standard metallization (more damaging to underlying channel) results in significant Fermi-level pinning, although Schottky barrier heights remain small (< 100 meV) when using high work function metals. Temperature-dependent analysis reveals a dominant contribution to contact resistance from the damaged channel access region. Thus, through less damaging metallization methods combined with strongly scaled HKMG stacks significant improvements were achieved in contact resistance and PMOS FET overall performance. A clean contact/channel interface was achieved through high-vacuum evaporation and temperature-controlled stepped deposition. Theoretical analysis using a Landauer transport adapted to WSe2 Schottky barrier FETs (SB-FETs) elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance towards the ultimate CMOS scaling limit.
Next, this dissertation discusses how device electrical characteristics are affected by scaling of equivalent oxide thickness (EOT) and by adopting double-gate FET architectures, as well as how this might support CMOS scaling. An improved gate control over the channel is made possible by scaling EOT, improving on-off current ratios, carrier mobility, and subthreshold swing. This study also elucidates the impact of EOT scaling on FET gate hysteresis attributed to charge-trapping effects in high-κ-dielectrics prepared by atomic layer deposition (ALD). These developments in 2D FETs offer a compelling alternative to conventional silicon-based devices and a path for continued transistor scaling. This research contributes to ongoing efforts in 2D materials for future semiconductor technologies. Finally, this work introduces devices based on emerging Janus TMDs and bismuth oxyselenide (Bi2O2Se) layered semiconductors.
ContributorsPatoary, Md Naim Hossain (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Tongay, Sefaattin (Committee member) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023
Description
Doping is the cornerstone of Semiconductor technology, enabling the functionalities of modern digital electronics. Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have tunable direct bandgaps, strong many-body interactions, and promising applications in future quantum information sciences, optoelectronic, spintronic, and valleytronic devices. However, their wafer-scale synthesis and precisely controllable doping are challenging. Moreover, there is no fixed framework to identify the doping concentration, which impedes their process integration for future commercialization. This work utilizes the Neutron Transmutation Doping technique to control the doping uniformly and precisely in TMDCs. Rhenium and Tin dopants are introduced in Tungsten- and Indium-based Chalcogenides, respectively. Fine-tuning over 0.001% doping level is achieved. Precise analytical techniques such as Gamma spectroscopy and Secondary Ion Mass Spectrometry are used to quantify ultra-low doping levels ranging from 0.005-0.01% with minimal error. Dopants in 2D TMDCs often exhibit a broad stokes-shifted emission, with high linewidths, due to extrinsic effects such as substrate disorder and surface adsorbates. A well-defined bound exciton emission induced by Rhenium dopants in monolayer WSe2 and WS2 at liquid nitrogen temperatures is reported along with specific annealing regimes to minimize the defects induced in the Neutron Transmutation process. This work demonstrates a framework for Neutron Doping in 2D materials, which can be a scalable process for controlling doping and doping-induced effects in 2D materials.
ContributorsLakhavade, Sushant Sambhaji (Author) / Tongay, Sefaattin (Thesis advisor) / Alford, Terry (Committee member) / Yang, Sui (Committee member) / Arizona State University (Publisher)
Created2023
Description
Understanding the dynamic interactions between humans and wildlife is essential to establishing sustainable wildlife-based ecotourism (WBE). Animal behavior exists within a complex feedback loop that affects overall ecosystem function, tourist satisfaction, and socioeconomics of local communities. However, the specific value that animal behavior plays in provisioning ecosystem services has not been thoroughly evaluated. People enjoy activities that facilitate intimate contact with animals, and there are many perceived benefits associated with these experiences, such as encouraging pro-environmental attitudes that can lead to greater motivation for conservation. There is extensive research on the effects that unregulated tourism activity can have on wildlife behavior, which include implications for population health and survival. Prior to COVID-19, WBE was developing rapidly on a global scale, and the pause in activity caused by the pandemic gave natural systems the chance to recover from environmental damage from over-tourism and provided insights into how tourism could be less impactful in the future. Until now it has been undetermined how changes in animal behavior can alter the relationships and socioeconomics of this multidimensional system. This dissertation provides a thorough exploration of the behavioral, ecological, and economic parameters required to model biosocial interactions and feedbacks within the whale watching system in Las Perlas Archipelago, Panama. Through observational data collected in the field, this project assessed how unmanaged whale watching activity is affecting the behavior of Humpback whales in the area as well as the socioeconomic and conservation contributions of the industry. Additionally, it is necessary to consider what a sustainable form of wildlife tourism might be, and whether the incorporation of technology will help enhance visitor experience while reducing negative impacts on wildlife. To better ascertain whether this concept of this integration would be favorably viewed, a sample of individuals was surveyed about their experiences about using technology to enhance their interactions with nature. This research highlights the need for more deliberate identification and incorporation of the perceptions of all stakeholders (wildlife included) to develop a less-impactful WBE industry that provides people with opportunities to establish meaningful relationships with nature that motivate them to help meet the conservation challenges of today.
ContributorsSurrey, Katie (Author) / Gerber, Leah (Thesis advisor) / Guzman, Hector (Committee member) / Minteer, Ben (Committee member) / Schoon, Michael (Committee member) / Arizona State University (Publisher)
Created2023
Description
In the past decade, 2D materials especially transition metal dichalcogenides (TMDc), have been studied extensively for their remarkable optical and electrical properties arising from their reduced dimensionality. A new class of materials developed based on 2D TMDc that has gained great interest in recent years is Janus crystals. In contrast to TMDc, Janus monolayer consists of two different chalcogen atomic layers between which the transition metal layer is sandwiched. This structural asymmetry causes strain buildup or a vertically oriented electric field to form within the monolayer. The presence of strain brings questions about the materials' synthesis approach, particularly when strain begins to accumulate and whether it causes defects within monolayers.The initial research demonstrated that Janus materials could be synthesized at high temperatures inside a chemical vapor deposition (CVD) furnace. Recently, a new method (selective epitaxy atomic replacement - SEAR) for plasma-based room temperature Janus crystal synthesis was proposed. In this method etching and replacing top layer chalcogen atoms of the TMDc monolayer happens with reactive hydrogen and sulfur radicals. Based on Raman and photoluminescence studies, the SEAR method produces high-quality Janus materials. Another method used to create Janus materials was the pulsed laser deposition (PLD) technique, which utilizes the interaction of sulfur/selenium plume with monolayer to replace the top chalcogen atomic layer in a single step.
The goal of this analysis is to characterize microscale defects that appear in 2D Janus materials after they are synthesized using SEAR and PLD techniques. Various microscopic techniques were used for this purpose, as well as to understand the
mechanism of defect formation. The main mechanism of defect formation was proposed to be strain release phenomena. Furthermore, different chalcogen atom positions within the monolayer result in different types of defects, such as the appearance of cracks or wrinkles across monolayers. In addition to investigating sample topography, Kelvin probe force microscopy (KPFM) was used to examine its electrical properties to see if the formation of defects impacts work function. Further study directions have been suggested for identifying and characterizing defects and their formation mechanism in the Janus crystals to understand their fundamental properties.
ContributorsSinha, Shantanu (Author) / Tongay, Sefaattin (Thesis advisor) / Alford, Terry (Committee member) / Yang, Sui (Committee member) / Arizona State University (Publisher)
Created2022
Description
University-level sustainability education in Western academia attempts to focus on eliminating future harm to people and the planet. However, Western academia as an institution upholds systems of oppression and reproduces settler colonialism. This reproduction is antithetical to sustainability goals as it continues patterns of Indigenous erasure and extractive relationships to the Land that perpetuate violence towards people and the planet. Sustainability programs, however, offer several frameworks, including resilience, that facilitate critical interrogations of social-ecological systems. In this thesis, I apply the notion of resilience to the perpetuation of settler colonialism within university-level sustainability education. Specifically, I ask: How is settler colonialism resilient in university-level sustainability education? How are, or could, sustainability programs in Western academic settings address settler colonialism? Through a series of conversational interviews with faculty and leadership from Arizona State University School of Sustainability, I analyzed how university-level sustainability education is both challenging and shaped by settler colonialism. These interviews focused on faculty perspectives on the topic and related issues; the interviews were analyzed using thematic coding in NVivo software. The results of this project highlight that many faculty members are already concerned with and focused on challenging settler colonialism, but that settler colonialism remains resilient in this system due to feedback loops at the personal level and reinforcing mechanisms at the institutional level. This research analyzes these feedback loops and reinforcing mechanisms, among others, and supports the call for anti-colonial and decolonial reconstruction of curriculum, as well as a focus on relationship building, shifting of mindset, and school-wide education on topics of white supremacy, settler colonialism, and systems of oppression in general.
ContributorsBills, Haven (Author) / Klinsky, Sonja (Thesis advisor) / Goebel, Janna (Committee member) / Schoon, Michael (Committee member) / Arizona State University (Publisher)
Created2022
Description
Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero. However, losses in these commercial dielectric materials at cryogenic temperatures increase markedly due to spin-excitation resulting from the presence of paramagnetic defects. Applying a large magnetic field (e.g., 5 Tesla) quenches these losses and has allowed the study of other loss mechanisms present at low temperatures. Work was performed on Fe3+ doped LaAlO3. At high magnetic fields, the residual losses versus temperature plots exhibit Debye peaks at ~40 K, ~75 K, and ~215 K temperature and can be tentatively associated with defect reactions O_i^x+V_O^x→O_i^'+V_O^•, Fe_Al^x+V_Al^"→Fe_Al^'+V_Al^' and Al_i^x+Al_i^(••)→〖2Al〗_i^•, respectively. Peaks in the loss tangent versus temperature graph of Zn-deficient BZT indicate a higher concentration of defects and appear to result from conduction losses.Guided by the knowledge gained from this study, a systematic study to develop high-performance microwave materials for ultra-high performance at cryogenic temperatures was performed. To this end, the production and characterization of perovskite materials that were either undoped or contained non-paramagnetic additives were carried out. Synthesis of BZT ceramic with over 98% theoretical density was obtained using B2O3 or BaZrO3 additives. At 4 K, the highest Q x f product of 283,000 GHz was recorded for 5% BaZrO3 doped BZT.
A portable, inexpensive open-air spectrometer was designed, built, and tested to make the electron paramagnetic resonance (EPR) technique more accessible for high-school and university lab instruction. In this design, the sample is placed near a dielectric resonator and does not need to be enclosed in a cavity, as is used in commercial EPR spectrometers. Permanent magnets used produce fields up to 1500 G, enabling EPR measurements up to 3 GHz.
ContributorsGajare, Siddhesh Girish (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Tongay, Sefaattin (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2022
Description
A remarkable phenomenon in contemporary physics is quantum scarring in classically chaoticsystems, where the wave functions tend to concentrate on classical periodic orbits. Quantum
scarring has been studied for more than four decades, but the problem of efficiently detecting
quantum scars has remained to be challenging, relying mostly on human visualization of
wave function patterns. This paper develops a machine learning approach to detecting
quantum scars in an automated and highly efficient manner. In particular, this paper exploits Meta
learning. The first step is to construct a few-shot classification algorithm, under the
requirement that the one-shot classification accuracy be larger than 90%. Then propose a
scheme based on a combination of neural networks to improve the accuracy. This paper shows that
the machine learning scheme can find the correct quantum scars from thousands images of
wave functions, without any human intervention, regardless of the symmetry of the underlying
classical system. This will be the first application of Meta learning to quantum systems. Interacting spin networks are fundamental to quantum computing. Data-based tomography oftime-independent spin networks has been achieved, but an open challenge is to ascertain the
structures of time-dependent spin networks using time series measurements taken locally
from a small subset of the spins. Physically, the dynamical evolution of a spin network under
time-dependent driving or perturbation is described by the Heisenberg equation of motion.
Motivated by this basic fact, this paper articulates a physics-enhanced machine learning framework
whose core is Heisenberg neural networks. This paper demonstrates that, from local measurements, not only the local Hamiltonian can be recovered but the Hamiltonian reflecting the interacting structure of the whole system can
also be faithfully reconstructed. Using Heisenberg neural machine on spin networks of a
variety of structures. In the extreme case where measurements are taken from only one spin,
the achieved tomography fidelity values can reach about 90%. The developed machine
learning framework is applicable to any time-dependent systems whose quantum dynamical
evolution is governed by the Heisenberg equation of motion.
ContributorsHan, Chendi (Author) / Lai, Ying-Cheng (Thesis advisor) / Yu, Hongbin (Committee member) / Dasarathy, Gautam (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2022
Description
Many important technologies, including electronics, computing, communications, optoelectronics, and sensing, are built on semiconductors. The band gap is a crucial factor in determining the electrical and optical properties of semiconductors. Beyond graphene, newly found two-dimensional (2D) materials have semiconducting bandgaps that range from the ultraviolet in hexagonal boron nitride to the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides (TMDs). These 2D materials were shown to have highly controllable bandgaps which can be controlled by alloying. Only a small number of TMDs and monochalcogenides have been alloyed, though, because alloying compromised the material's Van der Waals (Vdw) property and the stability of the host crystal lattice phase. Phase transition in 2D materials is an interesting phenomenon where work has been done only on few TMDs namely MoTe2, MoS2, TaS2 etc.In order to change the band gaps and move them towards the UV (ultraviolet) and IR (infrared) regions, this work has developed new 2D alloys in InSe by alloying them with S and Te at 10% increasing concentrations. As the concentration of the chalcogens (S and Te) increased past a certain point, a structural phase transition in the alloys was observed. However, pinpointing the exact concentration for phase change and inducing phase change using external stimuli will be a thing of the future. The resulting changes in the crystal structure and band gap were characterized using some basic characterization techniques like scanning electron microscopy (SEM), X-ray Diffraction (XRD), Raman and photoluminescence spectroscopy.
ContributorsYarra, Anvesh Sai (Author) / Tongay, Sefaattin (Thesis advisor) / Yang, Sui (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2022
Description
Thin film solar cells are based on polycrystalline materials that contain a high concentration of intrinsic and extrinsic defects. Improving the device efficiency in such systems relies on understanding the nature of defects - whether they are positive, negative, or neutral in their influence - and their sources in order to engineer optimized absorbers. Oftentimes, these are studied individually, as characterization techniques are limited in their ability to directly relate material properties in individual layers to their impact on the actual device performance. Expanding the tools available for increased understanding of materials and devices has been critical for reducing the translation time of laboratory-scale research to changes in commercial module manufacturing lines. The use of synchrotron X-ray fluorescence (XRF) paired with X-ray beam induced current and voltage (XBIC, XBIV respectively) has proven to be an effective technique for understanding the impact of material composition and inhomogeneity on solar cell device functioning. The combination of large penetration depth, small spot size, and high flux allows for the measurement of entire solar cell stacks with high spatial resolution and chemical sensitivity. In this work, I combine correlative XRF/XBIC/XBIV with other characterization approaches across varying length scales, such as micro-Raman spectroscopy and photoluminescence, to understand how composition influences device performance in thin films. The work described here is broken into three sections. Firstly, understanding the influence of KF post-deposition treatment (PDT) and the use of Ag-alloying to reduce defect density in the Ga-free material system, CuInSe2 (CIS). Next, applying a similar characterization workflow to industrially relevant Ga-containing Cu(In1-xGax)Se2 (CIGS) modules with Ag and KF-PDT. The influence of light soaking and dark heat exposure on the modules are also studied in detail. Results show that Ag used with KF-PDT in CIS causes undesirable cation ordering at the CdS interface and affects the device through increased potential fluctuations. The results also demonstrate the importance of tuning the concentration of KF-PDT used when intended to be used in Ag-alloyed devices. Commercially-processed modules with optimized Ag and KF concentrations are shown to have the device performance instead be dominated by variations in the CIGS composition itself. In particular, changes in Cu and Se concentrations are found to be most influential on the device response to accelerated stressors such as dark heat exposure and light soaking. In the final chapter, simulations of nano-scale XBIC and XBIV are done to contribute to the understanding of these measurements.
ContributorsNietzold, Tara (Author) / Bertoni, Mariana I. (Thesis advisor) / Holt, Martin (Committee member) / Shafarman, William N. (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2021
Description
Few-layer black phosphorous (FLBP) is one of the most important two-dimensional (2D) materials due to its strongly layer-dependent quantized bandstructure, which leads to wavelength-tunable optical and electrical properties. This thesis focuses on the preparation of stable, high-quality FLBP, the characterization of its optical properties, and device applications.Part I presents an approach to preparing high-quality, stable FLBP samples by combining O2 plasma etching, boron nitride (BN) sandwiching, and subsequent rapid thermal annealing (RTA). Such a strategy has successfully produced FLBP samples with a record-long lifetime, with 80% of photoluminescence (PL) intensity remaining after 7 months. The improved material quality of FLBP allows the establishment of a more definitive relationship between the layer number and PL energies.
Part II presents the study of oxygen incorporation in FLBP. The natural oxidation formed in the air environment is dominated by the formation of interstitial oxygen and dangling oxygen. By the real-time PL and Raman spectroscopy, it is found that continuous laser excitation breaks the bonds of interstitial oxygen, and free oxygen atoms can diffuse around or form dangling oxygen under low heat. RTA at 450 °C can turn the interstitial oxygen into dangling oxygen more thoroughly. Such oxygen-containing samples show similar optical properties to the pristine BP samples. The bandgap of such FLBP samples increases with the concentration of the incorporated oxygen.
Part III deals with the investigation of emission natures of the prepared samples. The power- and temperature-dependent measurements demonstrate that PL emissions are dominated by excitons and trions, with a combined percentage larger than 80% at room temperature. Such measurements allow the determination of trion and exciton binding energies of 2-, 3-, and 4-layer BP, with values around 33, 23, 15 meV for trions and 297, 276, 179 meV for excitons at 77K, respectively.
Part IV presents the initial exploration of device applications of such FLBP samples. The coupling between photonic crystal cavity (PCC) modes and FLBP's emission is realized by integrating the prepared sandwich structure onto 2D PCC. Electroluminescence has also been achieved by integrating such materials onto interdigital electrodes driven by alternating electric fields.
ContributorsLi, Dongying (Author) / Ning, Cun-Zheng (Thesis advisor) / Vasileska, Dragica (Committee member) / Lai, Ying-Cheng (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2022