Matching Items (67)
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Description
Synchronous buck converters have become the obvious choice of design for high efficiency voltage down-conversion applications and find wide scale usage in today's IC industry. The use of digital control in synchronous buck converters is becoming increasingly popular because of its associated advantages over traditional analog counterparts in terms of

Synchronous buck converters have become the obvious choice of design for high efficiency voltage down-conversion applications and find wide scale usage in today's IC industry. The use of digital control in synchronous buck converters is becoming increasingly popular because of its associated advantages over traditional analog counterparts in terms of design flexibility, reduced use of off-chip components, and better programmability to enable advanced controls. They also demonstrate better immunity to noise, enhances tolerance to the process, voltage and temperature (PVT) variations, low chip area and as a result low cost. It enables processing in digital domain requiring a need of analog-digital interfacing circuit viz. Analog to Digital Converter (ADC) and Digital to Analog Converter (DAC). A Digital to Pulse Width Modulator (DPWM) acts as time domain DAC required in the control loop to modulate the ON time of the Power-MOSFETs. The accuracy and efficiency of the DPWM creates the upper limit to the steady state voltage ripple of the DC - DC converter and efficiency in low load conditions. This thesis discusses the prevalent architectures for DPWM in switched mode DC - DC converters. The design of a Hybrid DPWM is presented. The DPWM is 9-bit accurate and is targeted for a Synchronous Buck Converter with a switching frequency of 1.0 MHz. The design supports low power mode(s) for the buck converter in the Pulse Frequency Modulation (PFM) mode as well as other fail-safe features. The design implementation is digital centric making it robust across PVT variations and portable to lower technology nodes. Key target of the design is to reduce design time. The design is tested across large Process (+/- 3σ), Voltage (1.8V +/- 10%) and Temperature (-55.0 °C to 125 °C) and is in the process of tape-out.
ContributorsKumar, Amit (Author) / Bakkaloglu, Bertan (Thesis advisor) / Song, Hongjiang (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light

Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light load currents, fixed frequency PWM converters suffer from poor efficiencies The PFM control offers higher efficiency at light loads at the cost of a higher ripple. The PWM has a poor efficiency at light loads but good voltage ripple characteristics, due to a high switching frequency. To get the best of both control modes, both loops are used together with the control switched from one loop to another based on the load current. Such architectures are referred to as hybrid converters. While transition from PFM to PWM loop can be made by estimating the average load current, transition from PFM to PWM requires voltage or peak current sensing. This theses implements a hysteretic PFM solution for a synchronous buck converter with external MOSFET's, to achieve efficiencies of about 80% at light loads. As the PFM loop operates independently of the PWM loop, a transition circuit for automatically transitioning from PFM to PWM is implemented. The transition circuit is implemented digitally without needing any external voltage or current sensing circuit.
ContributorsVivek, Parasuram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Sliding-Mode Control (SMC) has several benefits over traditional Proportional-Integral-Differential (PID) control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. An All-Digital Sliding-Mode (ADSM) controlled DC-DC converter, utilizing single-bit oversampled frequency domain digitizers is proposed. In the proposed approach, feedback and

Sliding-Mode Control (SMC) has several benefits over traditional Proportional-Integral-Differential (PID) control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. An All-Digital Sliding-Mode (ADSM) controlled DC-DC converter, utilizing single-bit oversampled frequency domain digitizers is proposed. In the proposed approach, feedback and reference digitizing Analog-to-Digital Converters (ADC) are based on a single-bit, first order Sigma-Delta frequency to digital converter, running at 32MHz over-sampling rate. The ADSM regulator achieves 1% settling time in less than 5uSec for a load variation of 600mA. The sliding-mode controller utilizes a high-bandwidth hysteretic differentiator and an integrator to perform the sliding control law in digital domain. The proposed approach overcomes the steady state error (or DC offset), and limits the switching frequency range, which are the two common problems associated with sliding-mode controllers. The IC is designed and fabricated on a 0.35um CMOS process occupying an active area of 2.72mm-squared. Measured peak efficiency is 83%.
ContributorsDashtestani, Ahmad (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Song, Hongjiang (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Data centers connect a larger number of servers requiring IO and switches with low power and delay. Virtualization of IO and network is crucial for these servers, which run virtual processes for computing, storage, and apps. We propose using the PCI Express (PCIe) protocol and a new PCIe switch fabric

Data centers connect a larger number of servers requiring IO and switches with low power and delay. Virtualization of IO and network is crucial for these servers, which run virtual processes for computing, storage, and apps. We propose using the PCI Express (PCIe) protocol and a new PCIe switch fabric for IO and switch virtualization. The switch fabric has little data buffering, allowing up to 512 physical 10 Gb/s PCIe2.0 lanes to be connected via a switch fabric. The switch is scalable with adapters running multiple adaptation protocols, such as Ethernet over PCIe, PCIe over Internet, or FibreChannel over Ethernet. Such adaptation protocols allow integration of IO often required for disjoint datacenter applications such as storage and networking. The novel switch fabric based on space-time carrier sensing facilitates high bandwidth, low power, and low delay multi-protocol switching. To achieve Terabit switching, both time (high transmission speed) and space (multi-stage interconnection network) technologies are required. In this paper, we present the design of an up to 256 lanes Clos-network of multistage crossbar switch fabric for PCIe system. The switch core consists of 48 16x16 crossbar sub-switches. We also propose a new output contention resolution algorithm utilizing an out-of-band protocol of Request-To-Send (RTS), Clear-To-Send (CTS) before sending PCIe packets through the switch fabric. Preliminary power and delay estimates are provided.
ContributorsLuo, Haojun (Author) / Hui, Joseph (Thesis advisor) / Song, Hongjiang (Committee member) / Reisslein, Martin (Committee member) / Zhang, Yanchao (Committee member) / Arizona State University (Publisher)
Created2013
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Description
A noninvasive optical method is developed to monitor rapid changes in blood glucose levels in diabetic patients. The system depends on an optical cell built with a LED that emits light of wavelength 535nm that is a peak absorbance of hemoglobin. As the glucose concentration in the blood decreases, its

A noninvasive optical method is developed to monitor rapid changes in blood glucose levels in diabetic patients. The system depends on an optical cell built with a LED that emits light of wavelength 535nm that is a peak absorbance of hemoglobin. As the glucose concentration in the blood decreases, its osmolarity also decreases and the RBCs swell and decrease the path length absorption coefficient. Decreasing absorption coefficient increases the transmission of light through the whole blood. The system was tested with a constructed optical cell that held whole blood in a capillary tube. As expected the light transmitted to the photodiode increases with decreasing glucose concentration. The average response time of the system was between 30-40 seconds. The changes in size of the RBC cells in response to glucose concentration changes were confirmed using a cell counter and also visually under microscope. This method does not allow measuring the glucose concentration with an absolute concentration calibration. It is directed towards development of a device to monitor the changes in glucose concentration as an aid to diabetic management. This method might be improvised for precision and resolution and be developed as a ring or an earring that patients can wear.
ContributorsRajan, Shiny Amala Priya (Author) / Towe, Bruce (Thesis advisor) / Muthuswamy, Jitendran (Committee member) / LaBelle, Jeffrey (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Cellular heterogeneity is a key factor in various cellular processes as well as in disease development, especially associated with immune response and cancer progression. Cell-to-cell variability is considered to be one of the major obstacles in early detection and successful treatment of cancer. Most present technologies are based on

Cellular heterogeneity is a key factor in various cellular processes as well as in disease development, especially associated with immune response and cancer progression. Cell-to-cell variability is considered to be one of the major obstacles in early detection and successful treatment of cancer. Most present technologies are based on bulk cell analysis, which results in averaging out the results acquired from a group of cells and hence missing important information about individual cells and their behavior. Understanding the cellular behavior at the single-cell level can help in obtaining a complete profile of the cell and to get a more in-depth knowledge of cellular processes. For example, measuring transmembrane fluxes oxygen can provide a direct readout of the cell metabolism.

The goal of this thesis is to design, optimize and implement a device that can measure the oxygen consumption rate (OCR) of live single cells. A microfluidic device has been designed with the ability to rapidly seal and unseal microchambers containing individual cells and an extracellular optical oxygen sensor for measuring the OCR of live single cells. The device consists of two parts, one with the sensor in microwells (top half) and the other with channels and cells trapped in Pachinko-type micro-traps (bottom half). When the two parts of the device are placed together the wells enclose each cell. Oil is flown in through the channels of the device to produce isolated and sealed microchamber around each cell. Different fluids can be flowed in and out of the device, alternating with oil, to rapidly switch between sealed and unsealed microenvironment around each cell. A fluorescent ratiometric dual pH and oxygen sensor is placed in each well. The thesis focuses on measuring changes in the oxygen consumption rate of each cell within a well. Live and dead cells are identified using a fluorescent live/dead cell assay. Finally, the technology is designed to be scalable for high-throughput applications by controlling the flow rate of the system and increasing the cell array density.
ContributorsRodrigues, Meryl (Author) / Meldrum, Deirdre (Thesis advisor) / Kelbauskas, Laimonas (Committee member) / LaBelle, Jeffrey (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented

Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is

Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is the need to build the same. In this thesis, the feasibility of building mixed analog circuits in TFTs are explored and demonstrated. A flexible CMOS op-amp is demonstrated using a-Si:H and pentacene TFTs. The achieved performance is ¡Ö 50 dB of DC open loop gain with unity gain frequency (UGF) of 7 kHz. The op-amp is built on the popular 2 stage topology with the 2nd stage being cascoded to provide sufficient gain. A novel biasing circuit was successfully developed modifying the gm biasing circuit to retard the performance degradation as the TFTs aged. A switched capacitor 7 bit DAC was developed in only nMOS topology using a-Si:H TFTs, based on charge sharing concept. The DAC achieved a maximum differential non-linearity (DNL) of 0.6 least significant bit (LSB), while the maximum integral non-linearity (INL) was 1 LSB. TFTs were used as switches in this architecture; as a result the performance was quite unchanged even as the TFTs degraded. A 5 bit fully flash ADC was also designed using all nMOS a-Si:H TFTs. Gray coding was implemented at the output to avoid errors due to comparator meta-stability. Finally a 5 bit current steering DAC was also built using all nMOS a-Si:H TFTs. However, due to process variation, the DNL was increased to 1.2 while the INL was about 1.8 LSB. Measurements were made on the external stress effects on zinc indium oxide (ZIO) TFTs. Electrically induced stresses were studied applying DC bias on the gate and drain. These stresses shifted the device characteristics like threshold voltage and mobility. The TFTs were then mechanically stressed by stretching them across cylindrical structures of various radii. Both the subthreshold swing and mobility underwent significant changes when the stress was tensile while the change was minor under compressive stress, applied parallel to channel length.
ContributorsDey, Aritra (Author) / Allee, David R. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Garrity, Douglas A (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence T (Committee member) / Arizona State University (Publisher)
Created2011
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Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental

CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Phase locked loops are an integral part of any electronic system that requires a clock signal and find use in a broad range of applications such as clock and data recovery circuits for high speed serial I/O and frequency synthesizers for RF transceivers and ADCs. Traditionally, PLLs have been primarily

Phase locked loops are an integral part of any electronic system that requires a clock signal and find use in a broad range of applications such as clock and data recovery circuits for high speed serial I/O and frequency synthesizers for RF transceivers and ADCs. Traditionally, PLLs have been primarily analog in nature and since the development of the charge pump PLL, they have almost exclusively been analog. Recently, however, much research has been focused on ADPLLs because of their scalability, flexibility and higher noise immunity. This research investigates some of the latest all-digital PLL architectures and discusses the qualities and tradeoffs of each. A highly flexible and scalable all-digital PLL based frequency synthesizer is implemented in 180 nm CMOS process. This implementation makes use of a binary phase detector, also commonly called a bang-bang phase detector, which has potential of use in high-speed, sub-micron processes due to the simplicity of the phase detector which can be implemented with a simple D flip flop. Due to the nonlinearity introduced by the phase detector, there are certain performance limitations. This architecture incorporates a separate frequency control loop which can alleviate some of these limitations, such as lock range and acquisition time.
ContributorsZazzera, Joshua (Author) / Bakkaloglu, Bertan (Thesis advisor) / Song, Hongjiang (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012