Matching Items (225)
Description
One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
The trend towards using recycled materials on new construction projects is growing as the cost for construction materials are ever increasing and the awareness of the responsibility we have to be good stewards of our environment is heightened. While recycled asphalt is sometimes used in pavements, its use as structural fill has been hindered by concern that it is susceptible to large long-term deformations (creep), preventing its use for a great many geotechnical applications. While asphalt/soil blends are often proposed as an alternative to 100% recycled asphalt fill, little data is available characterizing the geotechnical properties of recycled asphalt soil blends. In this dissertation, the geotechnical properties for five different recycled asphalt soil blends are characterized. Data includes the particle size distribution, plasticity index, creep, and shear strength for each blend. Blends with 0%, 25%, 50%, 75% and 100% recycled asphalt were tested. As the recycled asphalt material used for testing had particles sizes up to 1.5 inches, a large 18 inch diameter direct shear apparatus was used to determine the shear strength and creep characteristics of the material. The results of the testing program confirm that the creep potential of recycled asphalt is a geotechnical concern when the material is subjected to loads greater than 1500 pounds per square foot (psf). In addition, the test results demonstrate that the amount of soil blended with the recycled asphalt can greatly influence the creep and shear strength behavior of the composite material. Furthermore, there appears to be an optimal blend ratio where the composite material had better properties than either the recycled asphalt or virgin soil alone with respect to shear strength.
ContributorsSchaper, Jeffery M (Author) / Kavazanjian, Edward (Thesis advisor) / Houston, Sandra L. (Committee member) / Zapata, Claudia E (Committee member) / Arizona State University (Publisher)
Created2011
Description
In geotechnical engineering, measuring the unsaturated hydraulic conductivity of fine grained soils can be time consuming and tedious. The various applications that require knowledge of the unsaturated hydraulic conductivity function are great, and in geotechnical engineering, they range from modeling seepage through landfill covers to determining infiltration of water under a building slab. The unsaturated hydraulic conductivity function can be measured using various direct and indirect techniques. The instantaneous profile method has been found to be the most promising unsteady state method for measuring the unsaturated hydraulic conductivity function for fine grained soils over a wide range of suction values. The instantaneous profile method can be modified by using different techniques to measure suction and water content and also through the way water is introduced or removed from the soil profile. In this study, the instantaneous profile method was modified by creating duplicate soil samples compacted into cylindrical tubes at two different water contents. The techniques used in the duplicate method to measure the water content and matric suction included volumetric moisture probes, manual water content measurements, and filter paper tests. The experimental testing conducted in this study provided insight into determining the unsaturated hydraulic conductivity using the instantaneous profile method for a sandy clay soil and recommendations are provided for further evaluation. Overall, this study has demonstrated that the presence of cracks has no significant impact on the hydraulic behavior of soil in high suction ranges. The results of this study do not examine the behavior of cracked soil unsaturated hydraulic conductivity at low suction and at moisture contents near saturation.
ContributorsJacquemin, Sean Christopher (Author) / Zapata, Claudia (Thesis advisor) / Houston, Sandra (Committee member) / Kavazanjian, Edward (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
The theme for this work is the development of fast numerical algorithms for sparse optimization as well as their applications in medical imaging and source localization using sensor array processing. Due to the recently proposed theory of Compressive Sensing (CS), the $\ell_1$ minimization problem attracts more attention for its ability to exploit sparsity. Traditional interior point methods encounter difficulties in computation for solving the CS applications. In the first part of this work, a fast algorithm based on the augmented Lagrangian method for solving the large-scale TV-$\ell_1$ regularized inverse problem is proposed. Specifically, by taking advantage of the separable structure, the original problem can be approximated via the sum of a series of simple functions with closed form solutions. A preconditioner for solving the block Toeplitz with Toeplitz block (BTTB) linear system is proposed to accelerate the computation. An in-depth discussion on the rate of convergence and the optimal parameter selection criteria is given. Numerical experiments are used to test the performance and the robustness of the proposed algorithm to a wide range of parameter values. Applications of the algorithm in magnetic resonance (MR) imaging and a comparison with other existing methods are included. The second part of this work is the application of the TV-$\ell_1$ model in source localization using sensor arrays. The array output is reformulated into a sparse waveform via an over-complete basis and study the $\ell_p$-norm properties in detecting the sparsity. An algorithm is proposed for minimizing a non-convex problem. According to the results of numerical experiments, the proposed algorithm with the aid of the $\ell_p$-norm can resolve closely distributed sources with higher accuracy than other existing methods.
ContributorsShen, Wei (Author) / Mittlemann, Hans D (Thesis advisor) / Renaut, Rosemary A. (Committee member) / Jackiewicz, Zdzislaw (Committee member) / Gelb, Anne (Committee member) / Ringhofer, Christian (Committee member) / Arizona State University (Publisher)
Created2011
Description
It is estimated that wind induced soil transports more than 500 x 106 metric tons of fugitive dust annually. Soil erosion has negative effects on human health, the productivity of farms, and the quality of surface waters. A variety of different polymer stabilizers are available on the market for fugitive dust control. Most of these polymer stabilizers are expensive synthetic polymer products. Their adverse effects and expense usually limits their use. Biopolymers provide a potential alternative to synthetic polymers. They can provide dust abatement by encapsulating soil particles and creating a binding network throughout the treated area. This research into the effectiveness of biopolymers for fugitive dust control involved three phases. Phase I included proof of concept tests. Phase II included carrying out the tests in a wind tunnel. Phase III consisted of conducting the experiments in the field. Proof of concept tests showed that biopolymers have the potential to reduce soil erosion and fugitive dust transport. Wind tunnel tests on two candidate biopolymers, xanthan and chitosan, showed that there is a proportional relationship between biopolymer application rates and threshold wind velocities. The wind tunnel tests also showed that xanthan gum is more successful in the field than chitosan. The field tests showed that xanthan gum was effective at controlling soil erosion. However, the chitosan field data was inconsistent with the xanthan data and field data on bare soil.
ContributorsAlsanad, Abdullah (Author) / Kavazanjian, Edward (Thesis advisor) / Edwards, David (Committee member) / Zapata, Claudia (Committee member) / Arizona State University (Publisher)
Created2011
Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
A method for evaluating the integrity of geosynthetic elements of a waste containment system subject to seismic loading is developed using a large strain finite difference numerical computer program. The method accounts for the effect of interaction between the geosynthetic elements and the overlying waste on seismic response and allows for explicit calculation of forces and strains in the geosynthetic elements. Based upon comparison of numerical results to experimental data, an elastic-perfectly plastic interface model is demonstrated to adequately reproduce the cyclic behavior of typical geomembrane-geotextile and geomembrane-geomembrane interfaces provided the appropriate interface properties are used. New constitutive models are developed for the in-plane cyclic shear behavior of textured geomembrane/geosynthetic clay liner (GMX/GCL) interfaces and GCLs. The GMX/GCL model is an empirical model and the GCL model is a kinematic hardening, isotropic softening multi yield surface plasticity model. Both new models allows for degradation in the cyclic shear resistance from a peak to a large displacement shear strength. The ability of the finite difference model to predict forces and strains in a geosynthetic element modeled as a beam element with zero moment of inertia sandwiched between two interface elements is demonstrated using hypothetical models of a heap leach pad and two typical landfill configurations. The numerical model is then used to conduct back analyses of the performance of two lined municipal solid waste (MSW) landfills subjected to strong ground motions in the Northridge earthquake. The modulus reduction "backbone curve" employed with the Masing criterion and 2% Rayleigh damping to model the cyclic behavior of MSW was established by back-analysis of the response of the Operating Industries Inc. landfill to five different earthquakes, three small magnitude nearby events and two larger magnitude distant events. The numerical back analysis was able to predict the tears observed in the Chiquita Canyon Landfill liner system after the earthquake if strain concentrations due to seams and scratches in the geomembrane are taken into account. The apparent good performance of the Lopez Canyon landfill geomembrane and the observed tension in the overlying geotextile after the Northridge event was also successfully predicted using the numerical model.
ContributorsArab, Mohamed G (Author) / Kavazanjian, Edward (Thesis advisor) / Zapata, Claudia (Committee member) / Houston, Sandra (Committee member) / Arizona State University (Publisher)
Created2011
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011