Matching Items (236)
Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Concrete columns constitute the fundamental supports of buildings, bridges, and various other infrastructures, and their failure could lead to the collapse of the entire structure. As such, great effort goes into improving the fire resistance of such columns. In a time sensitive fire situation, a delay in the failure of critical load bearing structures can lead to an increase in time allowed for the evacuation of occupants, recovery of property, and access to the fire. Much work has been done in improving the structural performance of concrete including reducing column sizes and providing a safer structure. As a result, high-strength (HS) concrete has been developed to fulfill the needs of such improvements. HS concrete varies from normal-strength (NS) concrete in that it has a higher stiffness, lower permeability and larger durability. This, unfortunately, has resulted in poor performance under fire. The lower permeability allows for water vapor to build up causing HS concrete to suffer from explosive spalling under rapid heating. In addition, the coefficient of thermal expansion (CTE) of HS concrete is lower than that of NS concrete. In this study, the effects of introducing a region of crumb rubber concrete into a steel-reinforced concrete column were analyzed. The inclusion of crumb rubber concrete into a column will greatly increase the thermal resistivity of the overall column, leading to a reduction in core temperature as well as the rate at which the column is heated. Different cases were analyzed while varying the positioning of the crumb-rubber region to characterize the effect of position on the improvement of fire resistance. Computer simulated finite element analysis was used to calculate the temperature and strain distribution with time across the column's cross-sectional area with specific interest in the steel - concrete region. Of the several cases which were investigated, it was found that the improvement of time before failure ranged between 32 to 45 minutes.
ContributorsZiadeh, Bassam Mohammed (Author) / Phelan, Patrick (Thesis advisor) / Kaloush, Kamil (Thesis advisor) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
This study presents the results of one of the first attempts to characterize the pore water pressure response of soils subjected to traffic loading under saturated and unsaturated conditions. It is widely known that pore water pressure develops within the soil pores as a response to external stimulus. Also, it has been recognized that the development of pores water pressure contributes to the degradation of the resilient modulus of unbound materials. In the last decades several efforts have been directed to model the effect of air and water pore pressures upon resilient modulus. However, none of them consider dynamic variations in pressures but rather are based on equilibrium values corresponding to initial conditions. The measurement of this response is challenging especially in soils under unsaturated conditions. Models are needed not only to overcome testing limitations but also to understand the dynamic behavior of internal pore pressures that under critical conditions may even lead to failure. A testing program was conducted to characterize the pore water pressure response of a low plasticity fine clayey sand subjected to dynamic loading. The bulk stress, initial matric suction and dwelling time parameters were controlled and their effects were analyzed. The results were used to attempt models capable of predicting the accumulated excess pore pressure at any given time during the traffic loading and unloading phases. Important findings regarding the influence of the controlled variables challenge common beliefs. The accumulated excess pore water pressure was found to be higher for unsaturated soil specimens than for saturated soil specimens. The maximum pore water pressure always increased when the high bulk stress level was applied. Higher dwelling time was found to decelerate the accumulation of pore water pressure. In addition, it was found that the higher the dwelling time, the lower the maximum pore water pressure. It was concluded that upon further research, the proposed models may become a powerful tool not only to overcome testing limitations but also to enhance current design practices and to prevent soil failure due to excessive development of pore water pressure.
ContributorsCary, Carlos (Author) / Zapata, Claudia E (Thesis advisor) / Wiczak, Matthew W (Thesis advisor) / Kaloush, Kamil (Committee member) / Sandra, Houston (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
A recent joint study by Arizona State University and the Arizona Department of Transportation (ADOT) was conducted to evaluate certain Warm Mix Asphalt (WMA) properties in the laboratory. WMA material was taken from an actual ADOT project that involved two WMA sections. The first section used a foamed-based WMA admixture, and the second section used a chemical-based WMA admixture. The rest of the project included control hot mix asphalt (HMA) mixture. The evaluation included testing of field-core specimens and laboratory compacted specimens. The laboratory specimens were compacted at two different temperatures; 270 °F (132 °C) and 310 °F (154 °C). The experimental plan included four laboratory tests: the dynamic modulus (E*), indirect tensile strength (IDT), moisture damage evaluation using AASHTO T-283 test, and the Hamburg Wheel-track Test. The dynamic modulus E* results of the field cores at 70 °F showed similar E* values for control HMA and foaming-based WMA mixtures; the E* values of the chemical-based WMA mixture were relatively higher. IDT test results of the field cores had comparable finding as the E* results. For the laboratory compacted specimens, both E* and IDT results indicated that decreasing the compaction temperatures from 310 °F to 270 °F did not have any negative effect on the material strength for both WMA mixtures; while the control HMA strength was affected to some extent. It was noticed that E* and IDT results of the chemical-based WMA field cores were high; however, the laboratory compacted specimens results didn't show the same tendency. The moisture sensitivity findings from TSR test disagreed with those of Hamburg test; while TSR results indicated relatively low values of about 60% for all three mixtures, Hamburg test results were quite excellent. In general, the results of this study indicated that both WMA mixes can be best evaluated through field compacted mixes/cores; the results of the laboratory compacted specimens were helpful to a certain extent. The dynamic moduli for the field-core specimens were higher than for those compacted in the laboratory. The moisture damage findings indicated that more investigations are needed to evaluate moisture damage susceptibility in field.
ContributorsAlossta, Abdulaziz (Author) / Kaloush, Kamil (Thesis advisor) / Witczak, Matthew W. (Committee member) / Mamlouk, Michael S. (Committee member) / Arizona State University (Publisher)
Created2011
Description
The theme for this work is the development of fast numerical algorithms for sparse optimization as well as their applications in medical imaging and source localization using sensor array processing. Due to the recently proposed theory of Compressive Sensing (CS), the $\ell_1$ minimization problem attracts more attention for its ability to exploit sparsity. Traditional interior point methods encounter difficulties in computation for solving the CS applications. In the first part of this work, a fast algorithm based on the augmented Lagrangian method for solving the large-scale TV-$\ell_1$ regularized inverse problem is proposed. Specifically, by taking advantage of the separable structure, the original problem can be approximated via the sum of a series of simple functions with closed form solutions. A preconditioner for solving the block Toeplitz with Toeplitz block (BTTB) linear system is proposed to accelerate the computation. An in-depth discussion on the rate of convergence and the optimal parameter selection criteria is given. Numerical experiments are used to test the performance and the robustness of the proposed algorithm to a wide range of parameter values. Applications of the algorithm in magnetic resonance (MR) imaging and a comparison with other existing methods are included. The second part of this work is the application of the TV-$\ell_1$ model in source localization using sensor arrays. The array output is reformulated into a sparse waveform via an over-complete basis and study the $\ell_p$-norm properties in detecting the sparsity. An algorithm is proposed for minimizing a non-convex problem. According to the results of numerical experiments, the proposed algorithm with the aid of the $\ell_p$-norm can resolve closely distributed sources with higher accuracy than other existing methods.
ContributorsShen, Wei (Author) / Mittlemann, Hans D (Thesis advisor) / Renaut, Rosemary A. (Committee member) / Jackiewicz, Zdzislaw (Committee member) / Gelb, Anne (Committee member) / Ringhofer, Christian (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011
Description
The structural design of pavements in both highways and airfields becomes complex when one considers environmental effects and ground water table variation. Environmental effects have been incorporated on the new Mechanistic-Empirical Pavement Design Guide (MEPDG) but little has been done to incorporate environmental effects on airfield design. This work presents a developed code produced from this research study called ZAPRAM, which is a mechanistically based pavement model based upon Limiting Strain Criteria in airfield HMA pavement design procedures. ZAPRAM is capable of pavement and airfield design analyses considering environmental effects. The program has been coded in Visual Basic and implemented in an event-driven, user-friendly educational computer program, which runs in Excel environment. Several studies were conducted in order to insure the validity of the analysis as well as the efficiency of the software. The first study yielded the minimum threshold number of computational points the user should use at a specific depth within the pavement system. The second study was completed to verify the correction factor for the Odemark's transformed thickness equation. Default correction factors were included in the code base on a large comparative study between Odemark's and MLET. A third study was conducted to provide a comparison of flexible airfield pavement design thicknesses derived from three widely accepted design procedures used in practice today: the Asphalt Institute, Shell Oil, and the revised Corps of Engineering rutting failure criteria to calculate the thickness requirements necessary for a range of design input variables. The results of the comparative study showed that there is a significant difference between the pavement thicknesses obtained from the three design procedures, with the greatest deviation found between the Shell Oil approach and the other two criteria. Finally, a comprehensive sensitivity study of environmental site factors and the groundwater table depth upon flexible airfield pavement design and performance was completed. The study used the newly revised USACE failure criteria for subgrade shear deformation. The methodology utilized the same analytical methodology to achieve real time environmental effects upon unbound layer modulus, as that used in the new AASHTO MEPDG. The results of this effort showed, for the first time, the quantitative impact of the significant effects of the climatic conditions at the design site, coupled with the importance of the depth of the groundwater table, on the predicted design thicknesses. Significant cost savings appear to be quite reasonable by utilizing principles of unsaturated soil mechanics into the new airfield pavement design procedure found in program ZAPRAM.
ContributorsSalim, Ramadan A (Author) / Zapata, Claudia (Thesis advisor) / Witczak, Matthew (Thesis advisor) / Kaloush, Kamil (Committee member) / Arizona State University (Publisher)
Created2011